The invention relates to a cavity type film bulk acoustic resonator, comprising a substrate, an isolation layer, a support layer, a bottom electrode layer, a piezoelectric layer and a top electrode layer that are sequentially arranged from bottom to top, wherein the middle part of the upper surface of the isolation layer is recessed downwards to form a groove, the groove is sealed by the support layer and the substrate to form a sealed cavity, the height of the lower surface of the sealed cavity is less than the height of the upper surface of the substrate, the lower surface of the sealed cavity is a flat surface, and the material of the support layer is SiC. And meanwhile, the invention also discloses a preparation method of the acoustic resonator. According to the cavity type film bulk acoustic resonator and the preparation method thereof disclosed by the invention, the structure of the device is stabilized by the SiC support layer, and the power capacity can be improved; the heat can be effectively dissipated, the thermal steady-state temperature of the device can be reduced, and good thermal stability can be achieved; and according to the method, amorphous silicon layers are removed by using an acetone solution lift-off process, a CMP process can be simplified, the grinding time can be reduced, the grinding uniformity can be improved, and the frequency stability and the rate of finished products of the device can be improved.