7results about How to "Increased power capacity" patented technology

This utility model belongs to the field of filters, specifically a coaxial-to-waveguide filter, including a cavity with a waveguide port on the inner side. A coaxial connector is bolted to the top side of the waveguide port. Multiple resonant cavities are formed inside the cavity, and a coupling grounding post is installed inside the cavity through the resonant cavities. A coupling conductor is fixed between the waveguide port and one of the resonant cavities through a supporting insulating medium. One end of the coupling conductor is soldered to the coupling grounding post in the corresponding resonant cavity, and the other end extends into the waveguide port, realizing bidirectional coupling transmission of electromagnetic waves. This utility model introduces cross-coupling technology inside the filter, which significantly improves the out-of-band suppression compared to relying on natural attenuation, reduces the number of resonant cavities required to achieve the same suppression, thereby effectively reducing the product size and also reducing the filter insertion loss. This device achieves low port return loss through high out-of-band suppression.

This application discloses a three-dimensional ultra-wideband power divider, belonging to the field of radio frequency communication technology. It includes an input port, a strongly coupled line unit, a weakly coupled line unit, a first output port, and a second output port. The input port, strongly coupled line unit, and weakly coupled line unit are connected sequentially. The first terminal of the second end of the weakly coupled line unit is connected to the first output port, and the second terminal of the second end of the weakly coupled line unit is connected to the second output port. The weakly coupled line unit includes any number of coupling lines and multiple first resistors, with the multiple first resistors bridging between two coupling lines of the weakly coupled line unit. The strongly coupled line unit is a three-dimensional integrated vertical substrate circuit structure. This application overcomes the contradiction between ultra-wideband, high isolation, low loss, and mass production through a three-dimensional integrated structure, gradually changing coupling lines, and a multi-level bridging resistor network, providing a high-performance power divider solution for high-frequency communication systems.

This application relates to semiconductor technology and discloses a power semiconductor module and its driving circuit and electronic device. The power semiconductor module includes at least two groups of power semiconductor devices, a substrate, and multiple control signal pins. Each power semiconductor device group includes two power semiconductor devices forming a bridge arm structure, with each group connected in parallel. Each power semiconductor device is mounted on the substrate. The control terminal of each power semiconductor device is connected to a corresponding control signal pin. By using parallel power semiconductor device groups for current shunting, the system's power capacity and heat dissipation efficiency are greatly improved. Furthermore, connecting the control terminals of each power semiconductor device to separate control signal pins allows for individual control of each device, ensuring current balance among the parallel power semiconductor device groups and significantly improving the module's reliability.

This invention relates to the field of passive radio frequency microwave devices, specifically to a filter-type Wilkinson chip power divider and its fabrication method. The divider includes an aluminum nitride substrate, an adhesion layer, a metal ground plane, a buried dielectric layer, three-dimensional interdigitated tantalum nitride resistors, a filter power divider metal structure, and a passivation layer. The adhesion layer is disposed on the surface of the aluminum nitride substrate, the metal ground plane is disposed on the surface of the metal adhesion layer, the buried dielectric layer covers the surface of the metal ground plane, and the buried dielectric layer has resistor trenches and interconnecting vias etched inside. The three-dimensional interdigitated tantalum nitride resistors are disposed within the resistor trenches and electrically connected to the metal ground plane through the interconnecting vias. The filter power divider metal structure is disposed on the surface of the buried dielectric layer, and the passivation layer is deposited on the surface of the filter power divider metal structure. This invention achieves integrated power distribution, passband filtering, port isolation, and harmonic suppression functions through a single-chip structure. Compared to traditional modular solutions, it significantly reduces the device size and can meet the miniaturization and high integration requirements of radio frequency front-ends.

This invention proposes a composite rod-type magneto-electro-mechanical antenna and its fabrication method, belonging to the field of mechanical antenna technology. It solves the problems of low power capacity, weak radiation capability, and short communication distance commonly found in existing magneto-electro-mechanical antennas. It comprises a magnetostrictive layer, two transition layers, two sets of driving layers, and two sets of tail mass blocks. The magnetostrictive layer is located at the center, with the transition layer, driving layer, and tail mass blocks arranged sequentially from the center to both ends on either side. Each driving layer is composed of multiple piezoelectric ceramic rings and multiple electrode sheets stacked alternately. Each tail mass block consists of mass block one, a disc spring, and mass block two connected sequentially. The length of this composite rod-type magneto-electro-mechanical antenna is comparable to that of a traditional three-layer magneto-electro-electric antenna. When the antenna adopts the first-order longitudinal mode, it can operate in the very low frequency band. Depending on different application requirements, the composite rod-type magneto-electro-mechanical antenna of this invention can adopt the second-order longitudinal mode or operate in other frequency bands.

This invention discloses a thin-film bulk acoustic wave resonator structure and its fabrication method, comprising: a substrate; a cavity formed on the substrate; wherein, viewed from above: the cavity has a pentagonal structure with a release port formed on each side of the pentagonal structure; a support ring located on the substrate and surrounding the cavity, with the release ports exposed; a support layer located on the support ring and having a thickness less than that of the support ring; a bottom electrode edge load located above the release ports of the cavity and having a thickness equal to that of the support layer; a bottom electrode located on the support layer and the bottom electrode edge load; a piezoelectric layer located on the bottom electrode; a top electrode located on the piezoelectric layer; a passivation layer; and the periphery of the piezoelectric layer, bottom electrode, support layer, and support ring located on and below the top electrode. This invention improves some performance characteristics of the device and enhances its practicality, reliability, stability, and durability.

This invention relates to the field of radio frequency (RF) microwave communication, and particularly to an RF burn-out protection circuit and a high-power RF switch. The RF burn-out protection circuit of this invention includes a first 3dB coupler, a second 3dB coupler, a first parallel unit, a second parallel unit, a first matched load, a second matched load, a first RF circuit, and a second RF circuit. The RF burn-out protection circuit and high-power RF switch of this invention have high power capacity, low insertion loss, high isolation, stable VSWR performance, and are flexible in application and low in cost, possessing broad application prospects and value.