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592results about How to "Increased power capacity" patented technology

Electric field coupled power transfer system and control method based on novel topology

The invention discloses an electric field coupled power transfer system and a control method based on the novel topology. The system comprises a high-frequency inverter, a high-frequency resonator, an electric field coupling mechanism and an electric energy conversion link, and is characterized in that the high-frequency inverter is a double-E type amplifying high-frequency inverter, a high-frequency transformer is arranged between the high-frequency inverter and the high-frequency resonator, the high-frequency resonator is further connected with a controller, and the output end of the controller is connected with an inductance compensation tuning module and a drive circuit. The electric field coupled power transfer system has the obvious effects that the high-frequency voltage at the two ends of a coupling mechanism is increased, the strength of an electric field is enhanced, the transmission distance is lengthened, the voltage at the two ends of a high-frequency switch tube is increased to meet the requirement of high-frequency power electronic devices at the present stage, the power capacity of the system is improved, the voltage of the switch tube is reduced, the switch loss is reduced, and the adaptive ability of the system is improved.
Owner:重庆华创智能科技研究院有限公司

Radio frequency MEMS (micro-electromechanical system) switch and forming method thereof

The invention provides a radio frequency MEMS (micro-electromechanical system) switch and a forming method thereof. The switch comprises a substrate, a barrier layer formed on the substrate, a drive electrode, a microwave signal coplanar waveguide transmission line and a metal cantilever beam arm formed on the microwave signal coplanar waveguide transmission line, the drive electrode and the microwave signal coplanar waveguide transmission line are formed on the substrate, the microwave signal coplanar waveguide transmission line is provided with a switch contact point and an anchor region, the position of the switch contact point corresponds to a free end of the metal cantilever beam arm, the anchor region corresponds to a fixed end of the metal cantilever beam arm, and the switch contact point is composed of a copper film and a graphene film formed on the copper film. When the drive electrode is not applied with drive voltage, the metal cantilever beam arm is disconnected with the switch contact point to enable the switch to be off, and when the drive electrode is applied with drive voltage, electrostatic force is generated between the metal cantilever beam arm and the drive electrode, and the metal cantilever beam arm is enabled to bend to contact with the switch contact point so as to enable the switch to be on. The switch and the method have the advantages of lower thermal failure and high power capacity of the switch.
Owner:TSINGHUA UNIV

Cavity type film bulk acoustic resonator and preparation method thereof

InactiveCN107528561AReduce the thermal steady state temperatureHigh hardnessImpedence networksSteady state temperatureAmorphous silicon
The invention relates to a cavity type film bulk acoustic resonator, comprising a substrate, an isolation layer, a support layer, a bottom electrode layer, a piezoelectric layer and a top electrode layer that are sequentially arranged from bottom to top, wherein the middle part of the upper surface of the isolation layer is recessed downwards to form a groove, the groove is sealed by the support layer and the substrate to form a sealed cavity, the height of the lower surface of the sealed cavity is less than the height of the upper surface of the substrate, the lower surface of the sealed cavity is a flat surface, and the material of the support layer is SiC. And meanwhile, the invention also discloses a preparation method of the acoustic resonator. According to the cavity type film bulk acoustic resonator and the preparation method thereof disclosed by the invention, the structure of the device is stabilized by the SiC support layer, and the power capacity can be improved; the heat can be effectively dissipated, the thermal steady-state temperature of the device can be reduced, and good thermal stability can be achieved; and according to the method, amorphous silicon layers are removed by using an acetone solution lift-off process, a CMP process can be simplified, the grinding time can be reduced, the grinding uniformity can be improved, and the frequency stability and the rate of finished products of the device can be improved.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

High-linearity broadband stacking low noise amplifier based on gain compensation technology

The invention discloses a high-linearity broadband stacking low noise amplifier based on a gain compensation technology. The high-linearity broadband stacking low noise amplifier comprises a two-stacking low noise amplification network, an interstage matching network and a two-stacking gain expansion amplification network which are connected in sequence; and a first power supply bias network and a second power supply bias network which are connected with the two-stacking low noise amplification network and the two-stacking gain expansion amplification network. According to the high-linearity broadband stacking low noise amplifier, a serial stacking structure is realized through adoption of two transistors with different sizes and ultra wide band noise and impedance matching are realized through combination of an RLC feedback network; through utilization of the gain compression compensation technology, the gain compression property of the two-stacking low noise amplification network is cancelled within a certain bias range through the two-stacking gain expansion amplification network and a linearity index of the amplifier is improved, so the whole low noise amplifier has good broadband, linearity, low power consumption and low noise amplification capability; and moreover, the low breakdown voltage property of an integrated circuit technology is avoided and the stability and reliability of a circuit are improved.
Owner:CHENGDU GANIDE TECH
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