17results about How to "Increased power capacity" patented technology

This utility model belongs to the field of filters, specifically a coaxial-to-waveguide filter, including a cavity with a waveguide port on the inner side. A coaxial connector is bolted to the top side of the waveguide port. Multiple resonant cavities are formed inside the cavity, and a coupling grounding post is installed inside the cavity through the resonant cavities. A coupling conductor is fixed between the waveguide port and one of the resonant cavities through a supporting insulating medium. One end of the coupling conductor is soldered to the coupling grounding post in the corresponding resonant cavity, and the other end extends into the waveguide port, realizing bidirectional coupling transmission of electromagnetic waves. This utility model introduces cross-coupling technology inside the filter, which significantly improves the out-of-band suppression compared to relying on natural attenuation, reduces the number of resonant cavities required to achieve the same suppression, thereby effectively reducing the product size and also reducing the filter insertion loss. This device achieves low port return loss through high out-of-band suppression.

This application discloses a three-dimensional ultra-wideband power divider, belonging to the field of radio frequency communication technology. It includes an input port, a strongly coupled line unit, a weakly coupled line unit, a first output port, and a second output port. The input port, strongly coupled line unit, and weakly coupled line unit are connected sequentially. The first terminal of the second end of the weakly coupled line unit is connected to the first output port, and the second terminal of the second end of the weakly coupled line unit is connected to the second output port. The weakly coupled line unit includes any number of coupling lines and multiple first resistors, with the multiple first resistors bridging between two coupling lines of the weakly coupled line unit. The strongly coupled line unit is a three-dimensional integrated vertical substrate circuit structure. This application overcomes the contradiction between ultra-wideband, high isolation, low loss, and mass production through a three-dimensional integrated structure, gradually changing coupling lines, and a multi-level bridging resistor network, providing a high-performance power divider solution for high-frequency communication systems.

The utility model discloses a high-power waveguide sealing connection structure for an electron accelerator, which comprises a front straight waveguide, a rear straight waveguide, a flat flange, a double-groove type flange and a metal gasket, and the corresponding end faces of the front straight waveguide and the rear straight waveguide are respectively connected with the flat flange and the double-groove type flange. The flat flange and the double-groove type flange are connected with each other through respective sealing end surfaces; an annular stepped groove is formed in the sealing end face of the double-groove type flange, surrounding edges are arranged inside and outside the stepped groove, the stepped groove comprises a positioning groove and an auxiliary groove, the metal gasket is provided with a protruding annular positioning frame, the metal gasket is arranged between the flat flange and the double-groove type flange in a cushioned mode, and the positioning frame is connected with the positioning groove in a matched mode. According to the utility model, the sealing problem of high-power waveguide installation is solved, good electric contact of the butt joint plane of the two waveguide metal flanges during high-power microwave transmission operation is realized, high-power microwaves are prevented from escaping, vacuum in the waveguide is ensured, and stable transmission of the high-power microwaves is ensured.

This application relates to semiconductor technology and discloses a power semiconductor module and its driving circuit and electronic device. The power semiconductor module includes at least two groups of power semiconductor devices, a substrate, and multiple control signal pins. Each power semiconductor device group includes two power semiconductor devices forming a bridge arm structure, with each group connected in parallel. Each power semiconductor device is mounted on the substrate. The control terminal of each power semiconductor device is connected to a corresponding control signal pin. By using parallel power semiconductor device groups for current shunting, the system's power capacity and heat dissipation efficiency are greatly improved. Furthermore, connecting the control terminals of each power semiconductor device to separate control signal pins allows for individual control of each device, ensuring current balance among the parallel power semiconductor device groups and significantly improving the module's reliability.

The application belongs to the technical field of electromagnetic wave regulation and anti-interference, and specifically provides a dual-polarized broadband angle selective surface structure for same-frequency anti-interference, to solve the key technical problems of insufficient angle selectivity, limited working bandwidth and poor polarization adaptability of the existing angle selective structure in engineering application. The application proposes a structure design of multilayer metal plus polystyrene foam based on Jerusalem cross slots, realizes TE and TM dual-polarized working modes through innovative unit design and interlayer coupling mechanism; the multilayer metal arrangement realizes excellent angle selectivity and more than 6% working bandwidth while keeping a low profile, can keep low-loss transmission of incident waves at small-angle incidence, and keep stable angle selectivity and interference suppression performance at large-angle incidence; and the application has the significant advantages of good angle selectivity, wide working bandwidth, strong polarization adaptability, high structural stability and the like.

This invention relates to the field of passive radio frequency microwave devices, specifically to a filter-type Wilkinson chip power divider and its fabrication method. The divider includes an aluminum nitride substrate, an adhesion layer, a metal ground plane, a buried dielectric layer, three-dimensional interdigitated tantalum nitride resistors, a filter power divider metal structure, and a passivation layer. The adhesion layer is disposed on the surface of the aluminum nitride substrate, the metal ground plane is disposed on the surface of the metal adhesion layer, the buried dielectric layer covers the surface of the metal ground plane, and the buried dielectric layer has resistor trenches and interconnecting vias etched inside. The three-dimensional interdigitated tantalum nitride resistors are disposed within the resistor trenches and electrically connected to the metal ground plane through the interconnecting vias. The filter power divider metal structure is disposed on the surface of the buried dielectric layer, and the passivation layer is deposited on the surface of the filter power divider metal structure. This invention achieves integrated power distribution, passband filtering, port isolation, and harmonic suppression functions through a single-chip structure. Compared to traditional modular solutions, it significantly reduces the device size and can meet the miniaturization and high integration requirements of radio frequency front-ends.

This application relates to the technical field of electronic filtering, and in particular to a miniaturized ceramic dielectric filter capable of handling high power. The filter includes a ceramic cover plate, a cavity, an insulating kit, an inner conductor sheet, and a connector. The ceramic cover plate is silver-plated and sealed to the top of the cavity. Each side of the cavity has an interface penetrating the side wall. Two insulating kits are located inside the cavity, each corresponding to one of the interfaces. The inner conductor sheet is housed within the insulating kit. The connector passes through the interface, and its end connects to the inner conductor sheet. This application improves transmission efficiency, reduces losses, lowers heat dissipation, and extends product lifespan. The insulating dielectric completely encapsulates the inner conductor, effectively increasing the filter's power output. Compared to conventional ceramic dielectric filters ranging from a few watts to tens of watts, this filter can handle high-current, high-frequency signals, thus broadening its application scope.

This invention proposes a composite rod-type magneto-electro-mechanical antenna and its fabrication method, belonging to the field of mechanical antenna technology. It solves the problems of low power capacity, weak radiation capability, and short communication distance commonly found in existing magneto-electro-mechanical antennas. It comprises a magnetostrictive layer, two transition layers, two sets of driving layers, and two sets of tail mass blocks. The magnetostrictive layer is located at the center, with the transition layer, driving layer, and tail mass blocks arranged sequentially from the center to both ends on either side. Each driving layer is composed of multiple piezoelectric ceramic rings and multiple electrode sheets stacked alternately. Each tail mass block consists of mass block one, a disc spring, and mass block two connected sequentially. The length of this composite rod-type magneto-electro-mechanical antenna is comparable to that of a traditional three-layer magneto-electro-electric antenna. When the antenna adopts the first-order longitudinal mode, it can operate in the very low frequency band. Depending on different application requirements, the composite rod-type magneto-electro-mechanical antenna of this invention can adopt the second-order longitudinal mode or operate in other frequency bands.

The invention relates to the technical field of bulk acoustic wave devices, and particularly provides a bulk acoustic wave device packaging method and structure, and the method comprises the steps: carrying out the flip-chip welding of a bulk acoustic wave device on a packaging substrate; filling an air gap between the bulk acoustic wave device and the packaging substrate with a liquid material of which the acoustic impedance is smaller than that of an electrode of the bulk acoustic wave device and the heat conductivity coefficient is greater than a first preset heat conductivity coefficient; solidifying the liquid material so as to form a reflection heat dissipation layer between the bulk acoustic wave device and the packaging substrate; packaging the bulk acoustic wave device and the reflection heat dissipation layer to enable the packaging layer to wrap the bulk acoustic wave device and the reflection heat dissipation layer so as to obtain a bulk acoustic wave device packaging structure; according to the method, the power capacity of the bulk acoustic wave device can be improved under the condition that the structure of the bulk acoustic wave device does not need to be optimized.

The present application relates to the technical field of microwave circuit, especially to a compact L-band multi-path superconducting filter receiving front-end component, which is composed of a low-pass filter, a limiter, a first radio frequency switch, a straight-through radio frequency cable, a superconducting band-pass filter group, a second radio frequency switch, a low-noise amplification circuit and a digital control attenuator, and forms the compact L-band multi-path superconducting filter receiving front-end component through the connection relationship among them, realizes the combination of normal-temperature devices and superconducting filter components, improves the power capacity of the filter, and ensures the normal work of the receiving link under the failure condition of low-temperature environment.

The invention provides a sectional type broadcast antenna array and a configuration design method thereof, and belongs to the technical field of aircraft profile design, and the method comprises the steps: arranging a first group of broadcast antenna arrays at the front section of an upper wall plate at the left and right sides of a dorsal fin at the tail section of a fuselage, and arranging a second group of broadcast antenna arrays at the rear section, the antenna size of the first group of broadcast antenna array is smaller than that of the second group of broadcast antenna array, the first group of broadcast antenna array comprises a plurality of first antennas, and the second group of broadcast antenna array comprises a plurality of second antennas; calculating a first minimum interval between two adjacent first antennas and a second minimum interval between two adjacent second antennas; arranging the two groups of antennas based on the minimum spacing of the two groups of antennas, and respectively determining the number of first antennas and the number of second antennas; and setting the specific positions of the two groups of broadcast antenna arrays based on the number of the antennas and the minimum spacing. According to the scheme, the signal coverage range and the transmission efficiency of the broadcast antenna array are improved, the signal interference is reduced, and the antenna gain is improved.

This invention discloses a thin-film bulk acoustic wave resonator structure and its fabrication method, comprising: a substrate; a cavity formed on the substrate; wherein, viewed from above: the cavity has a pentagonal structure with a release port formed on each side of the pentagonal structure; a support ring located on the substrate and surrounding the cavity, with the release ports exposed; a support layer located on the support ring and having a thickness less than that of the support ring; a bottom electrode edge load located above the release ports of the cavity and having a thickness equal to that of the support layer; a bottom electrode located on the support layer and the bottom electrode edge load; a piezoelectric layer located on the bottom electrode; a top electrode located on the piezoelectric layer; a passivation layer; and the periphery of the piezoelectric layer, bottom electrode, support layer, and support ring located on and below the top electrode. This invention improves some performance characteristics of the device and enhances its practicality, reliability, stability, and durability.

The invention provides a positive voltage control type high-power single-pole double-throw switch, a chip and a radio frequency front-end circuit, and the switch comprises a voltage conversion module which generates reverse first and second switch control signals based on an external control voltage; first ends of the first switch stack module and the second switch stack module are respectively connected with the first radio frequency end and the second radio frequency end through the first capacitor and the second capacitor, and second ends are connected with the third radio frequency end through the third capacitor; the third switch stacking module is connected between the power supply voltage and the first end of the first switch stacking module; the fourth switch stacking module is connected between the power supply voltage and the first end of the second switch stacking module; the first switch stacking module and the fourth switch stacking module are controlled by a first switch control signal, and the second switch stacking module and the third switch stacking module are controlled by a second switch control signal; one end of the fourth capacitor is connected with the power supply voltage. The positive voltage control type high-power single-pole double-throw switch is simple and compact in structure, high in power capacity and beneficial to miniaturization and high integration level of a chip.

The invention discloses a low-profile multi-channel transmission line topology network layout and wiring method based on dielectric integrated suspension lines, and the low-profile multi-channel transmission line topology network comprises N dielectric integrated suspension lines and / or double-layer interconnection dielectric integrated suspension lines which are combined by quasi-coaxial structures, the dielectric integrated suspension line and / or the double-layer interconnection dielectric integrated suspension line are / is connected with N quasi-coaxial structures through strip lines, the quasi-coaxial structures are connected with a multi-channel system circuit, and N is larger than or equal to 1. On the basis of a quasi-coaxial structure in combination with a dielectric integrated suspension line, the low-profile multi-channel transmission line topology network layout wiring which is high in isolation, low in loss, high in power capacity, good in amplitude-phase consistency and self-packaged is realized.

The application discloses a broadband high-gain circularly polarized array antenna and a beam forming method, belongs to the technical field of wireless communication, and solves the problem of how to improve the circularly polarized working bandwidth of a radial line array antenna. One end of each coupling probe penetrates through the top of a radial line cavity feeding structure from the outside, penetrates into a preset length of an air cavity, and the other end of the coupling probe is correspondingly connected with a radiation array element outside the radial line cavity feeding structure. A plurality of the radiation array elements are arranged into multiple concentric circular rings and are annularly distributed on the top of the cavity of the radial line cavity feeding structure. Adjacent circular rings of the radiation array elements are arranged in a circumferential direction with a preset angle of rotation, there is a preset distance difference between the adjacent circular rings of the radiation array elements in the radial direction, and there is a preset phase difference between the adjacent circular rings of the radiation array elements. The application effectively expands the circularly polarized working bandwidth of the antenna by introducing a sequential rotation feeding technology between adjacent circumferential array elements.

This application relates to a control method, flexible capacity expansion device, system, equipment, and storage medium for a charging station. The method includes: acquiring the actual voltage and actual current of the charging station; when the actual voltage is lower than the target voltage, controlling a switch module to be in an open state, calculating a compensation voltage based on the actual voltage and the target voltage, generating a first drive signal based on the compensation voltage and transmitting it to a first module, so that the first module outputs a target AC voltage signal to the charging station; when the actual current is lower than the target current, determining a target power based on the actual current and the target current; generating a second drive signal and a third drive signal based on the target power, transmitting the second drive signal to a second module and the third drive signal to a third module, so that the second module obtains power from a backup power supply and transmits it to the third module through a DC bus, and causing the third module to output a target AC current signal to the charging station. This simultaneously achieves voltage sag management and flexible capacity expansion.

This invention relates to the field of radio frequency (RF) microwave communication, and particularly to an RF burn-out protection circuit and a high-power RF switch. The RF burn-out protection circuit of this invention includes a first 3dB coupler, a second 3dB coupler, a first parallel unit, a second parallel unit, a first matched load, a second matched load, a first RF circuit, and a second RF circuit. The RF burn-out protection circuit and high-power RF switch of this invention have high power capacity, low insertion loss, high isolation, stable VSWR performance, and are flexible in application and low in cost, possessing broad application prospects and value.