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Cavity type film bulk acoustic resonator and preparation method thereof

A thin-film bulk acoustic wave and resonator technology, applied in the field of resonators, preparation of cavity-type thin-film bulk acoustic resonators, and cavity-type thin-film bulk acoustic resonators, can solve thermal stability, poor power capacity, and high processing costs , Complicated production and other issues, to achieve good thermal stability, reduce processing costs, and stable device structure

Inactive Publication Date: 2017-12-29
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] Based on the above technical problems, the present invention provides a cavity-type thin-film bulk acoustic resonator, thereby solving the technical problems of high processing cost, long time, complicated manufacture, poor thermal stability and power capacity of the previous acoustic resonator; at the same time, Based on the cavity-type film bulk acoustic resonator, the invention also discloses a preparation method of the cavity-type film bulk acoustic resonator

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  • Cavity type film bulk acoustic resonator and preparation method thereof
  • Cavity type film bulk acoustic resonator and preparation method thereof
  • Cavity type film bulk acoustic resonator and preparation method thereof

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Embodiment

[0047] Such as Figure 4As shown, a cavity-type film bulk acoustic resonator includes a substrate 1, an isolation layer 2, a support layer 4, a bottom electrode layer 5, a piezoelectric layer 6, and a top electrode layer 7 arranged sequentially from bottom to top. The middle part of the upper surface of the layer 2 is depressed downward to form a groove, and the supporting layer 4 and the substrate 1 seal the groove to form a closed cavity 3, the height of the lower surface of the closed cavity 3 is lower than the height of the upper surface of the substrate 1, and the The lower surface of the closed cavity 3 is a flat surface; the piezoelectric layer 6 is arranged on the upper end of the support layer 4, the bottom electrode layer 5 is arranged in the middle of the lower end of the piezoelectric layer 6, and the lower end surface of the bottom electrode layer 5 is arranged on the support layer 4, the top electrode layer 7 is arranged in the middle of the upper end of the piez...

specific Embodiment

[0061] Such as Figure 4 As shown, a cavity-type film bulk acoustic resonator includes a substrate 1, an isolation layer 2, a support layer 4, a bottom electrode layer 5, a piezoelectric layer 6, and a top electrode layer 7 arranged sequentially from bottom to top. The middle part of the upper surface of the layer 2 is depressed downward to form a groove, and the supporting layer 4 and the substrate 1 seal the groove to form a closed cavity 3, the height of the lower surface of the closed cavity 3 is lower than the height of the upper surface of the substrate 1, and the The lower surface of the closed cavity 3 is a flat surface; the piezoelectric layer 6 is arranged on the upper end of the support layer 4, the bottom electrode layer 5 is arranged in the middle of the lower end of the piezoelectric layer 6, and the lower end surface of the bottom electrode layer 5 is arranged on the support layer 4, the top electrode layer 7 is arranged in the middle of the upper end of the pie...

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Abstract

The invention relates to a cavity type film bulk acoustic resonator, comprising a substrate, an isolation layer, a support layer, a bottom electrode layer, a piezoelectric layer and a top electrode layer that are sequentially arranged from bottom to top, wherein the middle part of the upper surface of the isolation layer is recessed downwards to form a groove, the groove is sealed by the support layer and the substrate to form a sealed cavity, the height of the lower surface of the sealed cavity is less than the height of the upper surface of the substrate, the lower surface of the sealed cavity is a flat surface, and the material of the support layer is SiC. And meanwhile, the invention also discloses a preparation method of the acoustic resonator. According to the cavity type film bulk acoustic resonator and the preparation method thereof disclosed by the invention, the structure of the device is stabilized by the SiC support layer, and the power capacity can be improved; the heat can be effectively dissipated, the thermal steady-state temperature of the device can be reduced, and good thermal stability can be achieved; and according to the method, amorphous silicon layers are removed by using an acetone solution lift-off process, a CMP process can be simplified, the grinding time can be reduced, the grinding uniformity can be improved, and the frequency stability and the rate of finished products of the device can be improved.

Description

technical field [0001] The invention relates to a resonator, which belongs to the technical field of radio frequency micro-electromechanical systems (MEMS), and specifically refers to a cavity-type thin-film bulk acoustic resonator; meanwhile, the invention also discloses the preparation of the cavity-type thin-film bulk acoustic resonator method. Background technique [0002] With the development of wireless communication systems in the direction of miniaturization, high frequency, and integration, traditional dielectric filters and surface acoustic wave filters are also difficult to meet the requirements of miniaturization and high frequency. The device has the incomparable volume advantages of ceramic dielectric filters, and the incomparable advantages of operating frequency and power capacity of surface acoustic wave resonators. In particular, MEMS technology is becoming more and more mature, and thin film bulk acoustic resonators have become the development trend of to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/05H03H9/10H03H9/17
CPCH03H3/02H03H9/02007H03H9/0514H03H9/1014H03H9/173H03H2003/021
Inventor 钟慧杨泰张根秦康宁张晨石玉
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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