46 results about "Radio frequency microelectromechanical system" patented technology

The systems and methods described herein provide for a radio frequency micro-electromechanical systems switch having two or more resonant frequencies. The switch can be configured as a capacitive shunt switch having a deflectable member coupled between two electrodes over a transmission line. A first insulator can be located between one of the electrodes and the deflectable member to form a capacitive element. The deflectable member can be deflectable between an up-state and a down-state, the down-state capacitively coupling the deflectable member with the transmission line. The degree by which the deflectable member overlaps the first insulator can be adjusted to adjust the capacitance of the capacitive element and the resulting resonant frequency.

The invention belongs to the technical field of a radio frequency MES (Micro Electro Mechanical System), and particularly provides a novel piezoelectric film bulk acoustic wave resonator and a manufacturing method thereof. The novel piezoelectric film bulk acoustic wave resonator comprises a substrate, a supporting layer, a bottom electrode layer, a piezoelectric layer and a top electrode layer; the substrate of the resonator is provided with a certain number of grooves for increasing an external surface area of the substrate; the supporting layer is arranged on the substrate, and low-acoustic-impedance flexible materials, such as polyimide and the like, are used for filling the insides of the grooves and the upper surface of the supporting layer; and then the bottom electrode layer, the piezoelectric layer and the top electrode layer are sequentially arranged on a low-acoustic-impedance layer. The novel piezoelectric film bulk acoustic wave resonator is novel in structure and simple to prepare, more importantly, can effectively solve the problems of poor thermal stability, insufficient power capacity and the like of a flexible substrate bulk acoustic wave resonator, and has excellent application prospect.

The invention is a tunable RF MEMS switch developed with a BST dielectric at the contact interface. BST has a very high dielectric constant (>300) making it very appealing for RF MEMS capacitive switches. The tunable dielectric constant of BST provides a possibility of making linearly tunable MEMS capacitive switches. The capacitive tunable RF MEMS switch with a BST dielectric is disclosed showing its characterization and properties up to 40 GHz.

The invention belongs to the radio frequency micro-electromechanical system technology field, to be specific, provides a novel film bulk acoustic resonator and a production method thereof. The film bulk acoustic resonator comprises a substrate; a bottom electrode, a piezoelectric layer, and a top electrode, which are sequentially disposed on the substrate. The substrate is provided with a groove, and a low acoustic impedance layer is disposed on the upper surface of the substrate and in the groove, and in addition, the bottom electrode, the piezoelectric layer, and the top electrode are disposed on the low acoustic impedance layer. The bottom electrode is the composite bottom electrode formed by sequentially arranging a high-conductivity electrode layer and a high acoustic impedance electrode layer in a laminated on the low acoustic impedance layer. The novel film bulk acoustic resonator and the production method thereof are advantageous in that the performance of the resonator is excellent, and the production technology difficulty and the complexity are greatly reduced; the production yield of the film bulk acoustic resonant is obviously improved, the production cost is greatly reduced, and the production period is shortened; the industrialized production is facilitated, and great meaning is provided for broadening the application field.

A vertical comb actuator radio frequency (RF) micro-electro-mechanical system (MEMS) switch. The RF MEMS switch includes a substrate; first and second signal lines spaced at a predetermined interval from each other and deposited on an upper surface of the substrate; an actuator positioned over the first and second signal lines when viewed from the upper surface of the substrate and spaced at a predetermined interval from the first and second signal lines; and a fixing portion positioned over the actuator when viewed from the upper surface of the substrate, wherein the fixing portion permits the actuator to come in contact with the first and second signal lines when a predetermined driving voltage is applied. Thus, it is possible to prevent the actuator from sticking to the substrate. In addition, the RF MEMS switch can be operated with a low voltage and insertion loss and power loss can be reduced.

The invention belongs to the technical field of radio frequency micro electro mechanical systems, and particularly provides a surface acoustic wave resonator with a photonic crystal reflector, which is used for remarkably improving the quality factor of the resonator. The resonator comprises a substrate 1, a piezoelectric layer 2 arranged on the substrate, an input electrode 3 arranged on the piezoelectric layer 2, an output electrode 4, a ground electrode 6 and a photonic crystal reflector 5, wherein the input electrode 3 and the output electrode 4 jointly form an interdigital transducer, thephononic crystal reflector 5 is composed of two phononic crystal arrays symmetrically arranged on the two sides of the interdigital transducer, and the ground electrode 6 is arranged around the interdigital transducer and the phononic crystal reflector. According to the invention, the phononic crystal reflector is adopted to replace a traditional electrode reflector, so that the quality factor ofthe resonator can be effectively improved; meanwhile, compared with the traditional electrode reflector design, the photonic crystal reflector has a wider acoustic band gap, and can inhibit sound wave propagation in the whole band gap frequency range, so that the inhibition of sound energy loss is more effective.

The invention belongs to the technical field of radio frequency micro electro mechanical systems, and particularly provides a piezoelectric film bulk acoustic resonator with high frequency and high coupling coefficient, which is used for overcoming the defect of small coupling coefficient of the existing resonator unit. The sensor specifically comprises a silicon-based substrate, a bottom mass loading film, a piezoelectric film and an interdigital transducer, the bottom mass loading film, the piezoelectric film and the interdigital transducer are sequentially stacked on the silicon-based substrate, top grid-shaped mass blocks are arranged between adjacent electrode finger strips of the interdigital transducer, the long edges of the top grid-shaped mass blocks are parallel to the electrodefinger strips, and the short edges of the top grid-shaped mass blocks are flush with suspended ends of the electrode finger strips. According to the invention, the coupling coefficient and Q value ofthe resonator are effectively improved through the mass loading structure, stray loss is reduced, and the resonator is suitable for being made into a broadband filter; meanwhile, due to the adoption of a loading mass block structure, the heat dissipation performance of the resonance body is improved; in addition, the length of the top-layer mass block can be matched with that of the electrode finger strip, and the electrode finger strip adopts a length-gradient and pseudo-electrode-like structure, so that the transverse mode of the resonator is effectively suppressed.

The invention relates to the technical field of radio frequency electromechanical system, and discloses a bistable mono-crystal silicon beam radio frequency micro-electromechanical system switch, the radio frequency micro-electromechanical system switch comprises an electromagnetic drive portion and a cantilever beam movable portion that are combined together in a manner of alignment bonding; the electromagnetic drive portion includes an iron core iron shell and a permanent magnet, and changes the direction of entire magnetic field by adding the magnetic field generated by current and the magnetic field of the permanent magnet into planar coil such that the cantilever beam movable portion moves to realize the connection and disconnection of contacts. By using the invention, the radio frequency micro-electromechanical system switch has low working voltage, large driving force, high working times, low energy consumption, small contact resistance, high isolation degree and simple control circuit, which is suitable for the radio frequency communication circuit with large power.

The invention discloses a measuring method of package thermal strain of radio frequency micro electromechanical system device (RF MEMS), wherein the specified position of a substrate and the RF MEMS device are provided synchronously with a group or a plurality of groups of test units which are load transmission lines consisting of high impedance coplanar waveguide and a plurality of dual-end fixing beam spanned on it periodically; the relation between the mechanical characteristics and the electrical characteristics of the load transmission line is used for determining the RF MEMS device package thermal strain. The invention measures the RF MEMS device package thermal strain by using microwave measuring means; the manufacture of the test unit is compatible to the manufacturing technique of the RF MEMS device, which can be carried out synchronously.

The invention relates to a radio frequency micro electro mechanical system switch with spring plate contact and a manufacturing method thereof, belonging to the field of electronic circuit technologies and micro electro mechanical system technologies. The invention aims to improve the power processing capability and reliability of a static driven contact type radio frequency micro electro mechanical system switch. In order to achieve the aim, the invention provides a radio frequency micro electro mechanical system switch comprising an anchor region, a cantilever beam and a static driven electrode; the switch comprises at least one set of contact device; the contact device comprises a spring plate contact, a fixed contact and a pit; the spring plate contact is positioned above the fixed contact; and the pit is arranged on the spring plate contact. According to the radio frequency switch provided by the invention, by combining a structure for increasing a contact surface on the basis of improving a contact material, the contact force and contact area are increased, and the contact resistance is reduced, thereby increasing the power processing capability of the switch and improving the reliability of the switch.

The invention belongs to the technical field of a radio frequency micro electro mechanical system, relates to a transverse excitation film bulk acoustic resonator, and particularly provides a film bulk acoustic resonator for suppressing side energy radiation based on a photonic crystal, which is used for solving the problem of side energy leakage of an existing transverse excitation film bulk acoustic resonator at a suspension beam tether. On the basis of a broadband piston mode resonator with a Freestanding type structure or an SMR Bragg reflection structure, a photonic crystal is introduced between an electrode finger strip of an interdigital transducer and a broadband piston structure to serve as a side energy radiation suppression structure; and a specific unit structure of the photonic crystal is designed in a matched manner, namely a cross-shaped hole penetrating through the piezoelectric film or a circular metal column arranged on the piezoelectric film, so that sound wave energy is restrained in an interdigital electrode pair resonant cavity, the problem of side energy leakage is solved, the in-band quality factor is remarkably improved. Therefore, the resonator is especially suitable for being made into a 5G frequency band (high-frequency large-bandwidth frequency bands such as N77, N78 and N79) high-quality-factor filter.

The invention discloses a wafer level capsulation mechanism and a wafer level capsulation method used for a radio-frequency micro electromechanical system. An RF MEMS apparatus with capsulation is connected to a welding ball 9 through a side lead by using surface micro machining technology and three-dimensional photoetching technology so as to realize the capsulation, avoid the process of drillingthrough holes in the conventional RF MEMS capsulation, protect structures of movable parts of the apparatus effectively and form a sealing environment. Thus mass production of the RFMEMS apparatus and normal work of the apparatus are ensured.

The invention relates to a high-reliability capacitance type radio frequency micro-electromechanical system switch without charge injection effect. A coplanar waveguide used as a radio frequency transmission line is produced on a low-loss substrate, a layer of insulating medium thin film covers the middle part of a central electrode of the coplanar waveguide, a switch film bridge spans over the insulating medium thin film, movable bias electrodes which are produced on a ground electrode of the coplanar waveguide are arranged at two ends of the film bridge, fixed bias electrodes are arranged at the outer sides of the movable bias electrodes, and the film bridge and the movable bias electrodes are both made of flexible electroplated gold. By adopting the flexible gold film bridge, the film bridge droops naturally and contacts the insulating medium thin film on the central electrode of the coplanar waveguide to realize the close state of the switch; furthermore, by applying lateral bias voltage between the movable bias electrodes and the fixed bias electrodes, the flexible gold movable bias electrodes can deviate outwards, the film bridge is tensioned so that the middle drooping partof the film bridge is separated from the insulating medium thin film and deviates upwards for a certain height to realize the open state of the switch. Therefore, the charge injection effect generated by the longitudinal bias voltage applied for realizing and maintaining the close state of the switch can be avoided, and the reliability of the switch can be improved.

The invention relates to a wafer-level encapsulation structure for radio frequency micro-electro mechanical system and an encapsulation method thereof. The wafer-level encapsulation structure comprises a substrate, a microwave transmission layer and an electrical connecting layer are distributed on the substrate; the microwave transmission layer is connected with a radio frequency micro-electro mechanical system device; the substrate is bound with an encapsulation head cover through an organic material encapsulation area and an inorganic material encapsulation area; an encapsulation cavity is formed in the encapsulation head cover; the radio frequency micro-electro mechanical system device is arranged in the encapsulation cavity; the microwave transmission layer passes through the organic material encapsulation area, and an electrical connecting line draws out from the inorganic material encapsulation area. Therefore, the encapsulation structure avoids a traditional substrate through hole punching process, a simple process is used for drawing out a radio frequency signal from the organic material through a microwave transmission line; the existent inorganic material encapsulation area makes up the problem of insufficient air tightness and binding strength when only the organic material encapsulation is existent. The structure disclosed by the invention can effectively guarantee that movable structure part of the radio frequency micro-electro mechanical system device is protected, and the reliability of the radio frequency micro-electro mechanical system device is improved.

The invention relates to an RF MEMS device comprising one or more free-standing thin films configured for motion in response to actuation or stimulation, the one or more thin films comprising an alloy of aluminum and magnesium, and optionally one or more further materials. The resultant thin film has improved hardness and reduced creep relative to conventional thin films.

The invention puts forward a capacitive radio-frequency micro-electromechanical system switch with signal lines and drive lines separated. The switch comprises a coplanar waveguide, anchor areas, crane leg beams, drive electrodes, a central polar plate, and drive lines. The anchor areas are disposed on ground lines of the coplanar waveguide. The crane leg beams are connected with the anchor areas at the two sides and the drive electrodes in the middle respectively. The drive electrodes are connected with the central polar plate through short straight beams. The drive electrodes consist of upper drive electrodes and lower drive electrodes. The drive lines are connected with the lower drive electrodes respectively. When a direct voltage is loaded on the drive lines, an electrostatic force is provided to pull the upper drive electrodes down so that the upper drive electrodes and the lower drive electrodes fit together to turn off the switch. By separating signal lines from the drive lines, the insertion loss is reduced under the condition of same driving voltage, and the performance of the switch is improved.

A radio frequency (RF) microelectromechanical system (MEMS) package includes a first mounting substrate, a signal line formed on a top surface of the first mounting substrate, the signal line comprising a MEMS device selectively electrically coupling a first portion of the signal line to a second portion of the signal line, and a ground assembly coupled to the first mounting substrate. The ground assembly includes a second mounting substrate, a ground plane formed on a bottom surface of the second mounting substrate, and at least one electrical interconnect extending through a thickness of the second mounting substrate to contact the ground plane, wherein the ground plane is spaced apart from the signal line.

The invention relates to a multi-beam structure combined radio frequency micro-electro-mechanical system resonator and an application, wherein the multi-beam structure combined radio frequency micro-electro-mechanical system resonator comprises an electro-mechanical conversion beam unit which is a transduction assembly of the input end and the output end of the resonator; an energy transmission beam which is a connecting structure of the electromechanical conversion beam unit; an electrode for applying a drive excitation; a dielectric layer which is a gap layer between the electromechanical conversion beam unit and the electrode; a base that plays a role in supporting the resonator; and a supporting structure used for realizing the suspension of the resonator. The multiple beam structuresachieve modal coupling through frequency matching, the distortion degree is small, a high Q value can be maintained and flexible setting of multiple resonant frequencies is achieved; so that good impact resistance and overload resistance are achieved, the beam structures can be used for constructing a multi-mode, multi-frequency-band and reconfigurable advanced wireless communication system, and the application potential of the beam structures under complex environment conditions is enhanced; therefore, internet-of-things effect is improved, and the environmental perception ability is enhanced.