Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Radio-frequency microelectromechanical systems and a method of manufacturing such systems

A manufacturing method and mechanical technology applied in the field of self-supporting metal thin film electronic devices to achieve cost savings, increased design freedom, and reduced mask steps and costs

Inactive Publication Date: 2006-12-06
TDK CORPARATION
View PDF1 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] A disadvantage of this known electronic device is that the self-supporting thin film made of Al and Ti alloys proves to be very sensitive to creep

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Radio-frequency microelectromechanical systems and a method of manufacturing such systems
  • Radio-frequency microelectromechanical systems and a method of manufacturing such systems
  • Radio-frequency microelectromechanical systems and a method of manufacturing such systems

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] RF MEMS switches and capacitors using different technology platforms and materials are being extensively researched and developed. Compared with traditional technology, the use of RF MEMS has some significant advantages, such as low insertion loss, low power consumption, and good isolation. However, a major obstacle to the successful commercialization of RF MEMS devices is their thermomechanical reliability.

[0041] The thermomechanical reliability problems in RF MEMS will be presented in various ways. First, extensive irreversible (plastic) deformation of the self-supporting metal film part may occur during processing. The reason is that the large mechanical stress and / or deposition stress caused by the thermal expansion mismatch with other materials existing in the structure exceeds the yield strength of the metal. This can result in highly deformed devices. In other words, if the stress of the material is lower than its yield strength, the material will deform, but this...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an RF MEMS device comprising one or more free-standing thin films configured for motion in response to actuation or stimulation, the one or more thin films comprising an alloy of aluminum and magnesium, and optionally one or more further materials. The resultant thin film has improved hardness and reduced creep relative to conventional thin films.

Description

Technical field [0001] The present invention relates to an electronic device including a self-supporting metal film, the metal film including an aluminum alloy. The invention particularly relates to such a device in which the self-supporting metal film is part of a microelectromechanical system (MEMS) element. Background technique [0002] Many MEMS structures use alloy metals instead of pure metals to improve the mechanical or electrical performance required by specific device specifications. In reference to Mechanical Properties of Structural Films ASTMSTP 1413 edited by C. Muhlstein and SB Brown, West Conshohocken, Pennsylvania, USA, Zhang, P, Lee, HJ and Bravman, JC, "Mechanical Tests of Free-Standing Aluminum" In "Microbeams for MEMS Applications", the mechanical properties of titanium (Ti) alloy aluminum films are specifically studied. The self-supporting microbeams (beam) studied in this reference document include 2 atomic percent titanium, and the self-supporting microbea...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01H59/00B81B3/00H01H1/00
CPCB81B3/0072B81B2203/0118H01H59/0009H01H1/0036H01H2001/0052Y10T428/31678
Inventor J·M·J·登通德A·R·范迪肯T·G·S·M·里克斯J·T·M·范比克
Owner TDK CORPARATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com