736results about "Flexible microstructural devices" patented technology

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

In accordance with an embodiment, a microelectromechanical system (MEMS) switch device includes: a substrate; a switching membrane disposed above the substrate; a pull-in electrode disposed above the switching membrane; a metal contact disposed on the switching membrane; and a pull-back electrode disposed below the switching membrane, wherein the switching membrane is movable between an open position and a closed position, and wherein in the closed position, the metal contact electrically connects two RF signal lines.

The invention provides an MEMS component and a vibration cavity structure and a liquid ejection head thereof, the MEMS component comprises a piezoelectric actuator structure, and the vibration cavity structure is in contact with the piezoelectric actuator structure; the vibration cavity structure comprises a vibration cavity and a cavity wall, and the inner side wall of the cavity wall is arc-shaped; the vibration cavity structure is made of silicon and / or silicon oxide. The cavity wall of the vibration cavity structure disclosed by the invention adopts the design of the arc-shaped inner side wall, so that the deformation volume of the vibration cavity is increased on the premise that the density of the spray holes of the liquid spray head is not changed, and the size of liquid drops is effectively increased; and meanwhile, the liquid ejection head can realize ejection of liquid drops with the same size by using relatively small driving voltage, so that the energy consumption is reduced.

The present application relates to an abnormal signal detection device using a dual acoustic wave sensor. The abnormal signal detection device using a dual acoustic wave sensor comprises: a housing including a first acoustic wave transmission portion and a second acoustic wave transmission portion; a base substrate located inside the housing and including a first surface and a second surface; a first acoustic wave sensor mounted on the first surface and converting an acoustic wave in a first band into a first electrical signal; a second acoustic wave sensor mounted on the second surface and converting an acoustic wave in a second band into a second electrical signal.

Aspects of transducers with feedback transduction are described. One aspect is a transducer system comprising an operational amplifier having an inverting input, a non-inverting input, and an output. The transducer system also includes a piezoelectric microelectromechanical system (MEMS) transducer having a first node and a second node, wherein the first node is coupled to the inverting input of the operational amplifier, and wherein the piezoelectric MEMS transducer is configured to generate an electrical signal across the first node and the second node in response to a signal incident upon the piezoelectric MEMS transducer. The transducer system also includes an attenuator having an input and an output, wherein the input of the attenuator is coupled to the output of the operational amplifier, and wherein the output of the attenuator is coupled to the second node of the piezoelectric MEMS transducer.

A semiconductor device for use in a sensor device has a deformable membrane for the measurement of an acceleration, a vibration, or a pressure. The semiconductor device includes a deformable membrane having a membrane border; a structure holding the deformable membrane in correspondence of the membrane border; at least one electric contact to obtain an electric signal indicative of deformation of the deformable membrane; and mass elements suspended from the membrane.

The present disclosure relates to a method of manufacturing a layered structure for a MEMS apparatus, a layered structure manufactured by the method, and a MEMS apparatus 200 (300, 400, 500) comprising the layered structure. For the layered structure, a high-temperature curing step is provided in the manufacturing process, for example, after structuring the functional layer 3. The structured regions and trenches of the functional layer 3 and in particular the spring structure formed in the functional layer 3 have smoothened side walls and / or rounded corners in regions 3a after the curing step, so that their fracture limits can thus be increased and early fractures of the functional layer 3 during operation of the MEMS apparatus 200 (300, 400, 500) can be avoided.

The present disclosure relates to a method for manufacturing a layered structure for a MEMS apparatus, a layered structure which is a layered structure produced by the method, and a MEMS apparatus 200 which comprises such a layered structure. For the layered structure or the MEMS apparatus 200, an exemplary starting substrate is used in the manufacturing process, which forms the mechanically effective functional layer 10, wherein the mechanically effective functional layer 10 comprises a ferroelectric and / or piezoelectric material.

A method for forming a semiconductor structure includes following operations. An interconnect structure is formed over a substrate. The interconnect structure includes a top conductive layer. A dielectric structure is formed over the interconnect structure. The dielectric structure is patterned to simultaneously form a cavity and a protrusion in the cavity. A MEMS substrate is bonded to the dielectric structure to seal the cavity. The protrusion is separated from the MEMS substrate.

Described herein is a method for manufacturing a micromechanical environmental barrier chip (500), the method comprising a step of providing a substrate (200) having a first surface (201) and an opposite second surface (202), a step of depositing a material layer (210) onto the first surface (201) of the substrate (200), the material layer (210) having a different etch characteristic than the substrate (200), a step of creating a microstructured micromechanical environmental barrier structure (220) on top of the material layer (210) by applying a microstructuring process, a step of applying an anisotropic etching process comprising at least one etching step for anisotropically etching from the second surface (202) towards the first surface (201) of the substrate (200) so as to create at least a first cavity (230) underneath the micromechanical environmental barrier structure (220), the cavity (230) extending between the second surface (202) and the material layer (210), and a step of removing the material layer (210) underneath the micromechanical environmental barrier structure (220) in order to expose the environmental barrier structure (220).

Disclosed herein is a MEMS sensor package that includes a substrate, an annular-shaped first dry film pattern stuck to one surface of the substrate, and a MEMS sensor chip including a tubular support and a detection part which is supported on the support so as to overlap a cavity of the support. The MEMS sensor chip is fixed to the substrate by sticking an annular mounting surface of the support to the first dry film pattern.

A micro-electromechanical-system (MEMS) device may be formed to include an anti-stiction polysilicon layer on one or more moveable MEMS structures of a device wafer of the MEMS device to reduce, minimize, and / or eliminate stiction between the moveable MEMS structures and other components or structures of the MEMS device. The anti-stiction polysilicon layer may be formed such that a surface roughness of the anti-stiction polysilicon layer is greater than the surface roughness of a bonding polysilicon layer on the surfaces of the device wafer that are to be bonded to a circuitry wafer of the MEMS device. The higher surface roughness of the anti-stiction polysilicon layer may reduce the surface area of the bottom of the moveable MEMS structures, which may reduce the likelihood that the one or more moveable MEMS structures will become stuck to the other components or structures.

The invention relates to a microelectromechanical component (1) having a substrate (2) with a substrate surface (2a), a mass (3) which can be moved relative to the substrate surface (2a), and a stop spring (4) which is arranged between the substrate (2) and the movable mass (3), the stop spring (4) extending from a mechanical anchor (5) in a self-supporting manner parallel to the substrate surface (2a), and wherein the stop spring (4) has a decreasing width (B) along its length extension (L) from the mechanical anchor (5) to a free end (6) of the stop spring (4). The invention also relates to a microelectromechanical inertial sensor (20) having such a microelectromechanical component (1).

An inertial sensor and a method therefor. The inertial sensor includes: a first substrate; a medium layer stacked on the first substrate; a first electric-conductive layer stacked on the medium layer, first openings being formed in the first electric-conductive layer and spaced from one another; second electric-conductive layers being bonded to the first electric-conductive layer through bonding structures, a gap being formed between adjacent second electric-conductive layers, which are connected to each other by a connection part, and second openings being formed in each of the second electric-conductive layers and spaced from one another; and a second substrate covering the first substrate, a closed space being formed between the second substrate and the first substrate. Compared with a traditional single-layer structure, the die size is reduced, the manufacturing cost is reduced, and the integration of device into portable consumer applications is improved, and XY axis sensitivity is improved.

The present disclosure describes micromechanical resonator, a resonator element for the resonator, and a method for trimming the resonator. The resonator comprises a resonator element having a length, a width, and a thickness, where the length and the width define a plane of the resonator element. The resonator element comprises at least two regions (52, 53) in the plane of the resonator element, wherein the at least two regions have different thicknesses.

A MEMS device comprises a housing with an interior volume, wherein the housing comprises an access port to the interior volume; a MEMS sound transducer in the housing, and a mechanical barrier structure having a plate element which is fixed by means of elastic spacers to a carrier and overlaps the access port, and providing a ventilation path passing a boundary region of the plate element, wherein a clearance of the ventilation path is set by the distance of the boundary region of the plate element to the housing or by the distance of the boundary region of the plate element to a blocking structure which opposes the boundary region of the plate element.

A kind of heart sound sensing structure and its preparation method, the structure includes double SOI substrate, center mass, elastic support beam, piezoresistive sensing unit and capacitive sensing unit.The front surface of center mass is provided with additional mass layer, and the back surface is kept bottom layer silicon to increase thickness;Elastic support beam connects mass and frame;Piezoresistive sensing unit is composed of four piezoresistors to form wheatstone bridge, and capacitive sensing unit includes movable and fixed comb-tooth capacitive plate crossing each other.When the sound pressure gradient of heart sound signal drives mass to deviate, elastic support beam bends to change piezoresistive value, and at the same time, comb-tooth capacitive plate overlapping area changes to cause capacitive value change, to realize piezoresistive and capacitive dual-mode synchronous detection.Two kinds of detection mechanisms calibrate each other, which significantly improves the sensitivity and anti-interference ability of low-frequency heart sound signal.The preparation method is based on double SOI substrate, integrated by ion implantation, etching, metal deposition and 3D printing process, suitable for miniaturized wearable heart sound monitoring application.

A mirror array comprising a movable mirror is described. The movable mirror including a stationary frame including a cavity and a movable frame in the cavity. The movable frame is suspended from the stationary frame by a first stationary frame flexure and a second stationary frame flexure. The movable mirror further includes a central stage in the cavity. The mirror array further comprises a lid wafer covering the movable mirror and a first protrusion on the lid wafer, wherein the first protrusion extends towards the movable mirror.

A MEMS device that includes: a first cover; a second cover defining a space between the second cover and the first cover; a first substrate opposite to the first cover in the space between the second cover and the first cover, the first substrate comprising single-crystal silicon; a second substrate opposite to the second cover in the space between the second cover and the first cover, the second substrate comprising single-crystal silicon, the second substrate including a movable portion, the single-crystal silicon of the second substrate being joined to the single-crystal silicon of the first substrate; and an electrostatic capacity portion between at least one of (1) the second cover and the second substrate or (2) the first substrate and the second substrate, the electrostatic capacity portion being configured such that electrostatic capacity changes depending on a distance between the movable portion and the second cover or the first substrate.

A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.

A micromechanical z-acceleration sensor. The sensor has a substrate with a main extension plane, and a micromechanical rocker which is arranged parallel to the extension plane above the substrate and can be tilted in a first direction z perpendicular to the extension plane, wherein the rocker in a first partial region: has first perforations, which extend through the rocker in the first direction z, with a first cross-section parallel to the main extension plane with a first aspect ratio of at least 1:1; and has second perforations, which extend through the rocker in the first direction z, with a second cross-section with a second aspect ratio of a longer side to a shorter side, wherein the first aspect ratio is smaller than the second aspect ratio. A first perforation and a second perforation are arranged alternately next to one another in a repeating pattern.

A transducer (10A) is provided with: a substrate (20) that contains silicon; and a piezoelectric element (30) that is disposed on the substrate (20). The substrate (20) has: a film body (21) having a first surface (21a) and a second surface (21b) that face one another from opposite directions in a thickness direction; and a frame body (22) that surrounds the film body (21) when viewing the film body (21) from the thickness direction. The piezoelectric element (30) is disposed on the first surface (21a) of the film body (21). A portion of an outer edge (21c) of the film body (21) when viewed from the thickness direction forms a connected part (21d) that is connected to the frame body (22), and the remainder of the outer edge (21c) aside from the connected part (21d) is separated from the frame body (22). The substrate (20) has a projecting part (24) that projects in the thickness direction from a region, of the second surface (21b), that includes at least a portion of the remainder of the outer edge (21c).

An actuator (140) includes an arm starting end (141) on which a piezoelectric element is formed, a first end of the arm starting end (141) being connected to an inner side of a fixed frame (110), the arm starting end extending in a straight line, along a Y-axis direction through a gap between the fixed frame (110) and a mirror surface (130), from the first end to beyond a middle point (N) of an outer side of the mirror surface (130); an arm terminating end (142) including a first end connected to the middle point (N) of the outer side of the mirror surface (130), the arm terminating end (142) extending parallel to the arm starting end (141); and an arm relay (143) that connects a second end of the arm starting end (141) to a second end of the arm terminating end (142), the arm relay (143) being formed in a zigzag by alternately connecting an arm connector (143B) extending along the Y-axis direction and an arm extension (143A) extending parallel to the arm starting end (141) and on which the piezoelectric element is formed.

A MEMS pressure transducer includes a semiconductor body, a fixed electrode region, and a membrane suspended above the fixed electrode region to delimit a cavity, the membrane being deformable as a function of pressure. The membrane includes a lower conductive region made of polysilicon which delimits the cavity at the top and is traversed by holes which face the cavity, the lower conductive region being impermeable to gases, except for the holes; an intermediate structure made of polysilicon permeable to gases, which closes the holes. The membrane also includes an upper conductive region made of polysilicon or amorphous silicon, which extends on the intermediate structure and the lower conductive region and is impermeable to gases. The membrane is laterally delimited by a lateral surface, which is formed by the lower conductive region and the upper conductive region. The intermediate structure does not face the lateral surface of the membrane.

The invention relates to a micromechanical component for a sensor device, having a substrate (10) with a substrate surface (10a), at least one stator electrode arranged on the substrate surface and / or on at least one intermediate layer at least partially covering the substrate surface, the at least one stator electrode each being formed from a first semiconductor layer and / or a metal layer, at least one actuator electrode arranged adjustably, the at least one actuator electrode each being formed from a second semiconductor and / or metal layer (P2), a membrane spanning the at least one stator electrode and the at least one actuator electrode, the membrane having a membrane outer side (18a) oriented away from the at least one stator electrode and the at least one actuator electrode, the membrane outer side being formed from a third semiconductor layer and / or a metal layer (P3), a stiffening structure and / or a protection structure (54) protruding on the membrane outer side being formed from a fourth semiconductor layer and / or a metal layer (P4).

The invention relates to a pressure sensor (10) for measuring ambient pressure, comprising a first pressure measuring element (12) with a first cavity (16) and at least one first deflection element (20) spanning at least section by section over the first cavity (16) and deflectable in a normal direction (18) depending on the ambient pressure, a second pressure measuring element (14) with a second cavity (44) and at least one second deflection element (46) spanning at least section by section over the second cavity (44) and deflectable in the normal direction (18) depending on the ambient pressure, wherein the second deflection element (46) comprises the first pressure measuring element (12) and a peripheral deflection region (48) adjacent to the first pressure measuring element (12), wherein the second cavity (44) overlaps the first cavity (16) at least section by section with respect to the normal direction (18),wherein the first deflection element (20) has a smaller material thickness than the edge-side deflection area (48).

The present disclosure is directed to the design and fabrication of a two-layer optical switching cell that controllably distributes and reroutes optical signals between bus optical waveguides of an optical switch network. The two-layer optical switching cell includes one or more mechanical optical switches fabricated on a waveguide layer containing bus optical waveguides. The optical switches include suspended commutation optical waveguides supported by a metal structure and configured to couple light from one bus optical waveguide to another bus optical waveguide upon electromechanical actuation. A method for fabricating such an optical switch includes steps that enable fabrication of an optical switching cell with silicon nitride or single crystal silicon optical waveguides and a metal clamp support structure.