2741results about "Flexible microstructural devices" patented technology

A method of making an acoustic sensor includes forming or providing a mold having one or more grooves extending in a direction of the length of the mold to a distal end of the mold. The method also includes forming or depositing a structure having one or more piezoelectric layers over the top surface of the mold to define a beam with a proximal portion and a distal portion, the distal portion having a corrugated section including one or more grooves that correspond to the one or more grooves of the mold. The method also includes forming or applying an electrode to the proximal portion of the structure and releasing the structure from the mold to form one or more cantilever beams. The corrugated section inhibits bending of the corrugated section along the length of the distal portion of the structure when the acoustic sensor is subjected to sound pressure.

Microelectromechanical component (100) for motion measurement, comprising: a fortified section (118); a single, central anchor (106) coupled to the attached section (118) with four sides; a first non-straight suspension element (108) coupled to the anchor (106) on one side of the anchor (106); a second non-straight suspension member (120) coupled to the anchor (106) on the same side of the anchor (106), wherein the second non-straight suspension member (120) has a shape and position that mirrors the first non-straight suspension member (108) on a plane (122) bisecting the anchor; and a test mass (104) which is planar, wherein the test mass (104) is suspended at least partially on the first non-straight suspension member (108) and the second non-straight suspension member (120) such that the test mass (104) is rotatable about the anchor (106) and displaceable in a plane which is parallel to the attached section (118), where the first and second non-straight suspension members (108, 120) are bending bearings, wherein the first non-straight suspension member (108) has a C-shape, wherein the C-shape includes an inner section (110) which is coupled to the anchor (106) and extends towards the plane (122) bisecting the anchor, a central section (114) which includes a nearby section and has a distant section, whereby the near section is coupled to the inner section (110), and the far section extends away from the anchor (106) along the plane (122) bisecting the anchor and is coupled to an outer section (112) extending away from the plane (122) bisecting the anchor.

To provide an actuator device capable of stably obtaining desired drive characteristics even if, for example, an environment temperature is changed.SOLUTION: A metal board 3 supported by a wiring board includes: a movable part; a first extension part 33; a first connection part 35 for connecting the first extension part 33 to the movable part; and a first connection part 37 connected to the first extension part 33. The first connection part 37 includes: a first fixed area 371 fixed to the wiring board; and a first connection area 372 connected to the first extension part 33 and the first fixed area 371. The first connection area 372 includes a first bent part 372c. The first bent part 372c includes a first outer edge P1 in the movable part side and a second outer edge P2 in a side opposite to the movable part, and each of the first outer edge P1 and the second outer edge P2 is bent to the movable part side when viewed from a Z-axis direction.SELECTED DRAWING: Figure 6

A method of making an acoustic sensor (e.g., a piezoelectric sensor for a piezoelectric microelectromechanical systems microphone) includes forming or depositing one or more piezoelectric layers to define a beam extending between a proximal portion and a distal tip (e.g., unsupported free end), the beam having a width in plan view that is greater at a location distal of the proximal portion than at the proximal portion. The method also comprises attaching the beam to a substrate in cantilever form so that the proximal portion of the beam is anchored to the substrate and the distal tip is a free unsupported end of the beam. One or more electrodes are disposed on or in the proximal portion of the beam.

The present application relates to a micromechanical component (1) and a method for producing a micromechanical component (1). The proposed micromechanical component (1) comprises a layered structure and at least one piezoelectric element (10). The piezoelectric element (10) contains a first electrode (5) and second electrode (27) for generating and / or detecting deflections of a deflection element (16). The deflection element (16) is connected to a holder (17). The layered structure of the micromechanical component (1) comprises a silicon substrate (2), a conductive semiconductor layer (26), a piezoelectric layer (7) and a conductive layer film (12). The conductive semiconductor layer (26) forms the first electrode (5) and the conductive layer film (12) forms the second electrode (27) of the piezoelectric element, wherein the conductive semiconductor layer (26) at the same time forms a carrier layer (28) for the deflection element (16).

The invention belongs to the field of MEMS sensors, and particularly relates to a low-temperature-drift MEMS resonant pressure sensor sensitive chip and a preparation method thereof. Comprising a cap layer, a resonance layer, a pressure sensing layer and an isolation base which are sequentially bonded and connected from top to bottom, the cap layer is provided with an electrode through hole and a vacuum cavity groove, and a getter is sputtered in the vacuum cavity groove; two Si-SiO2 composite resonators and a plurality of lead wire discs are arranged on the resonance layer, and a metal electrode is arranged on each lead wire disc; the number of the metal electrodes is equal to that of the cap layer electrode through holes, and the metal electrodes are located under the electrode through holes; two groups of silicon islands are arranged on the front surface of the pressure sensing layer, and three rectangular sensitive films with the same size are arranged on the back surface; the isolation base is a glass table; according to the invention, the output sensitivity of the sensor is greatly improved, the chip processing complexity is reduced, and the introduction of additional stress and materials is reduced.

Microelectromechanical systems (MEMS) apparatuses and processes are described that can employ a spring pillar or flexible pillar coupled to a sensing membrane to enhance deformation of the sensing membrane while providing robust MEMS sensors or devices. Described MEMS sensors or devices can comprise an exemplary spring pillar or flexible pillar between the sensing membrane structure and the backplate structure. Exemplary spring pillar or flexible pillar can facilitate adjusting stiffness of the sensing membrane to provide MEMS sensors or devices having large sensing area and compact device size.

A cooling system is described. The cooling system includes a cooling element and a support structure. The cooling element is configured to undergo vibrational motion when actuated to drive a fluid toward a heat-generating structure. The cooling element includes a piezoelectric structure including a substrate having a first side and a second side opposite to the first side. A first piezoelectric layer is on the first side. A second piezoelectric layer is on the second side. The support structure is coupled to the cooling element and configured to support the cooling element.

The invention relates to the technical field of piezoelectric materials, in particular to a lead zirconate titanate film and a low-temperature preparation method and application thereof.The preparation method comprises the steps that Ti metal serves as a radio frequency target material and is subjected to first sputtering deposition treatment on a substrate, and a Ti adhesion layer is formed; forming a bottom electrode on the Ti adhesion layer; taking PbxZr0. 52Ti0. 48O3 ceramic as a radio frequency target material, carrying out second sputtering deposition treatment on the bottom electrode, and carrying out rapid heat treatment to form a PZT seed layer; and carrying out third sputtering deposition treatment on the PZT seed layer by taking PbxZr0. 52Ti0. 48O3 ceramic as a radio frequency target material, carrying out rapid heat treatment, and repeating the step to form the lead zirconate titanate film. According to the method, the substrate tray is not additionally heated in the process of sputtering and depositing the PZT thin film material, so that the loss and volatilization of PbO are reduced, and the stability of thin film components can be effectively maintained; the PZT seed layer is utilized to provide more crystal nucleuses, so that the uniform crystallization of the PZT film is promoted, the crystallization quality and the electrical property of the PZT film are improved, the grain boundary defect is reduced, and the adhesive force and the stability of the film and the substrate are enhanced.

The invention relates to the field of pressure (0-200 kPa) detection, in particular to an MEMS integrated pressure sensing device or a monolithic integrated multi-frequency capacitive micromachined ultrasonic transducer (CMUTs) for wide-range pressure measurement. According to the monolithic integrated multi-frequency CMUTs, a first CMUTs, a second CMUTs and a third CMUTs are integrated on a chip; by adjusting the diaphragm thickness, cavity height and diaphragm radius of the first, second and third CMUT units and the pressure value in the cavity of the second CMUT unit, the first and second CMUT units work in a linear range of small deflection deformation, and the third CMUT unit works in a linear range of large deflection deformation. And the working ranges of the first CMUT unit, the second CMUT unit and the third CMUT unit form a continuous and complete measurement interval, and the resonant frequencies are not overlapped, so that the integrated pressure sensing device which can be used for 0-200 kPa full-pressure range measurement is realized.

The present disclosure, in some embodiments, relates to a MEMS (Microelectromechanical systems) structure. The MEMS structure includes a first comb structure having a first plurality of comb fingers extending outward from a first branch. A second comb structure has a second plurality of comb fingers extending outward from a second branch. The first plurality of comb fingers are laterally interleaved between the second plurality of comb fingers. The first plurality of comb fingers respectively include a weighted core material and one or more peripheral materials. The weighted core material has a larger density than the one or more peripheral materials.

The present invention features a micrometer-scale torsion balance device comprising a rigid mass and two or more nanoribbons attached to the rigid mass. The rigid mass may be suspended by the two or more nanoribbons. The two or more nanoribbons may be placed under tensile stress. A local acceleration value may be derived from a torsional stiffness of the two or more nanoribbons. In some embodiments, the rigid mass may comprise silicon. In some embodiments, the two or more nanoribbons may comprise silicon nitride. In some embodiments, the rigid mass may have a polygon shape, the polygon shape having four or more sides. A side of the four or more sides may be longer than all others.

A probe including a shell, an ultrasonic transducer unit, and at least one circuit board is provided. The ultrasonic transducer unit is disposed in the shell and includes a substrate, a vibrating membrane, and an anti-resonance structure. The vibrating membrane is disposed on the substrate and forms a cavity with the substrate. The anti-resonance structure is disposed on one side of the substrate facing away from the vibrating membrane and includes a hard layer and a glue layer connected to each other. The density of the glue layer is different from the density of the hard layer. The at least one circuit board is electrically coupled to the ultrasonic transducer unit. A method of fabricating the ultrasonic transducer unit is also provided.

To provide a micromachined ultrasonic transducer (MUT) including an electrode designed to improve both acoustical and electrical performances of the transducer.SOLUTION: A micromachined ultrasonic transducer (MUT) (720) includes a substrate; a membrane suspending from the substrate; a bottom electrode disposed on the membrane; a piezoelectric layer disposed on the bottom electrode, and an asymmetric top electrode (722) disposed on the piezoelectric layer. The areal density distribution of the asymmetric electrode (722) along an axis (742) has a plurality of local maxima, and locations of the plurality of local maxima coincide with locations (726) (728) where a plurality of anti-nodal points at a vibrational resonance frequency is located.SELECTED DRAWING: Figure 7B

A piezoelectric mirror component including a mirror element, a piezoelectric drive ring which surrounds the mirror element and is connected to the mirror element by way of at least one first torsion spring element, and a frame element connected to the drive ring via at least one second torsion spring element is specified, wherein the drive ring has a first diameter in a first direction and a second diameter in a second direction perpendicular to the first direction, and the first diameter is greater than the second diameter. A method for operating the piezoelectric mirror component and a projection apparatus are also specified.

A MEMS microphone includes a substrate, a base, a capacitance system, and at least one cantilever structure. The substrate includes a back cavity, the base is disposed on one side of the substrate, and the capacitance system is disposed on the base. The capacitance system includes at least one back plate assembly, at least one first vibration diaphragm, and at least one second vibration diaphragm. The at least one first vibration diaphragm includes a first sub-vibration diaphragm, and the at least one second vibration diaphragm includes a second sub-vibration diaphragm. The sub-vibration diaphragm and the second sub-vibration diaphragm form a cantilever beam structure on the base, which increase compliance of the at least one first vibration diaphragm and the at least one second vibration diaphragm and reduce tension of the at least one first vibration diaphragm and the at least one second vibration diaphragm, thereby improving sensitivity of the microphones.

The invention relates to a method for the temporary fixing of micro-electro-mechanically movable elements (100), in particular those that can be used in equipment for semiconductor technology. In the method for temporarily fixing an element (100) that is micro-electro-mechanically movable relative to a basic structure (101) in at least one degree of freedom by at least one actuator (102), the fixing is carried out by filling at least one cavity (103) provided for the movement of the element, wherein - the material (202) intended for filling the at least one cavity (103) is introduced into the at least one cavity (103) in gaseous form in such a way that the material (202) is adsorbed and fills the at least one cavity (103) in layers, and - wherein at least one surface (200) of the movable element (100) to be kept free of the material (202) intended for filling is heated to a temperature above the sublimation temperature of the material (202) in order to prevent adsorption of the material (202) on the at least one surface (200) to be kept free. The invention also relates to a micro-electro-mechanically movable element (100) which is or was fixed by a method according to the invention.

The invention provides an MEMS pressure sensor, a preparation method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, sequentially forming a first pressure sensing film layer, a first sacrificial layer and a first sub-electrode layer on the first substrate, and sequentially forming a second pressure sensing film layer, a second sacrificial layer and a second supporting layer on the second substrate; respectively etching the first sub-electrode layer and the second supporting layer to form a plurality of first release holes and a plurality of second release holes; removing part of the first sacrificial layer to form a first cavity, and removing part of the second sacrificial layer to form a second cavity; the first sub-electrode layer and the second supporting layer are bonded, and the first release holes and the second release holes are arranged in a staggered mode; and etching the first substrate to form a back cavity, and removing the second substrate to expose the second pressure sensing film layer. According to the scheme, the first sub-electrode layer and the second supporting layer are bonded to form the MEMS pressure sensor with the double pressure sensing film layers, and the sensitivity and the linearity are improved.

A piezoelectric microelectromechanical system microphone comprises a support substrate, a piezoelectric element configured to deform and generate an electrical potential responsive to impingement of sound waves on the piezoelectric element, the piezoelectric element attached to the support substrate about a portion of a perimeter of the piezoelectric element, a sensing electrode disposed on the piezoelectric element and configured to sense the electrical potential, and slits defined in the piezoelectric element about the perimeter of the piezoelectric element, the slits defining a plurality of partial anchors securing the piezoelectric element to the support substrate to improve sensitivity of the piezoelectric microelectromechanical system microphone.

The invention provides a hybrid-driven MEMS device and a preparation method thereof, and the method comprises the steps: forming a first actuating structure in a first substrate, forming a piezoelectric composite film layer on the first actuating structure, applying voltages with opposite electrical properties to a first electrode layer and a second electrode layer, enabling a piezoelectric layer to deform under the effect of an inverse piezoelectric effect, and enabling the piezoelectric composite film layer to form a piezoelectric composite film layer; the movable end of the first actuating structure is driven to move; a second cavity is formed in the second substrate, a third electrode layer is formed in the second cavity, voltage which is the same as or opposite to that of the second electrode layer is applied to the third electrode layer, and the third electrode layer and the second electrode layer serve as electrodes for electrostatic driving. According to the MEMS device, the first actuating structure and the second actuating structure are arranged, so that the deformation deflection of the movable end of the first actuating structure is further increased on the basis of displacement generated by piezoelectric driving, the hybrid-driven MEMS device is formed, the defects of independent driving of piezoelectric driving and electrostatic driving are overcome, and the MEMS device can achieve larger displacement under the same voltage during accurate deflection.

The invention provides an MEMS pressure sensor, a manufacturing method thereof and an electronic device, and the method comprises the steps: providing a first substrate and a second substrate, forming a first pressure structure on the first substrate, and forming a second pressure structure on the second substrate; bonding the first pressure structure and the second pressure structure; the first substrate is removed, the first pressure structure and the second pressure structure jointly form a third pressure structure, the third pressure structure comprises a first electrode layer, a second electrode layer, a third electrode layer, a fourth electrode layer and a fifth electrode layer which are arranged at intervals from top to bottom, and a dielectric layer is formed between every two adjacent electrode layers; and cavities penetrating through the dielectric layers are formed in the dielectric layers. According to the scheme, the multiple electrode layers arranged from bottom to top are formed, the multiple electrode layers form the first capacitor, the second capacitor, the third capacitor and the fourth capacitor respectively, then the Wheatstone bridge is formed jointly, the measurement precision of the MEMS pressure sensor is improved, meanwhile, the plane size of the MEMS pressure sensor is reduced, and the integration level of the device is improved.

A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.A MEMS element in which a backplate including a fixed electrode and a vibrating membrane including a movable electrode are disposed on a substrate including a back chamber, so as to face each other via a spacer, the vibrating membrane includes a pillar connected to the backplate, pillar side slits, and peripheral portion side slits, and a plurality of vibrating portion is formed in the vibrating membrane. The central portion of the vibrating membrane is connected to the backplate by the pillar, so that the amplitude of the central portion can be suppressed. In each of a plurality of vibrating portions, the pillar side slits are disposed on a portion side in which the pillar and the vibrating membrane are joined and the peripheral portion side slits are disposed at the peripheral portion, thereby decreasing the difference in the amplitude amount between the central portion and the peripheral portion.

To provide an analysis element and a manufacturing method thereof that can prevent an object to be analyzed from being unable to be analyzed appropriately.SOLUTION: A manufacturing method of this analysis element 100 includes the steps of forming a mask layer 20, forming a membrane layer 30, exposing a substrate 10, forming an introduction hole 13 and forming a protrusion 14 at the inlet end 13a of the introduction hole 13, and removing the protrusion 14 by wet etching the protrusion 14.SELECTED DRAWING: Figure 13

This MEMS device comprises: a lower lid (10); an upper lid (30) that forms a space between the upper lid (30) and the lower lid (10); a first substrate (20A) that is disposed facing the lower lid (10) in the space formed between the upper lid (30) and the lower lid (10), and is made of monocrystalline silicon; a second substrate (20B) that is disposed facing the upper lid (30) in the space formed between the upper lid (30) and the lower lid (10), is made of monocrystalline silicon, and includes a movable part (24B), the monocrystalline silicon of the second substrate (20B) being bonded to the monocrystalline silicon of the first substrate (20A); and a capacitance part that is provided between the upper lid (30) and the second substrate (20B) and / or between the first substrate (20A) and the second substrate (20B), and is configured such that the capacitance changes in accordance with the distance between the movable part (24B) and the upper lid (30) or the first substrate (20A).

Disclosed are a vibration sensor, an electronic device and a vibration detection method. The vibration sensor comprises a circuit board assembly, a housing, a chip assembly, a vibration-pickup assembly and a through-hole. A back cavity is formed inside the circuit board assembly, the housing is mounted over the circuit board assembly, and the chip assembly is provided on a side of the circuit board assembly proximate to the housing and is electrically connected to the circuit board assembly. The vibration-pickup assembly is provided inside the cavity and dividing the cavity into a first cavity and a second cavity. The through-hole of the vibration sensor may be in communication with the back cavity and the second cavity.

Disclosed an airflow sensor and an airflow sensor packaging structure. The airflow sensor comprises a base, a vibrating electrode, and a fixed electrode in a stacked arrangement, wherein the base has a back cavity passing through in its thickness direction. it is intended that the fixed electrode of the air flow sensor is provided with a vent hole and the perimeter edge of the vibration sensitive area of the vibration electrode is provided with a pressure equalizing hole. In the thickness direction of the substrate, the pressure equalizing hole The projection overlaps with the projection of the vent hole, and the pressure equalizing hole, the vent hole and the gap layer channel jointly form an air release channel, which is conducive to the smooth diffusion of oil smoke entering the air flow sensor along the air release channel.

An airflow generating package includes a base, a covering structure and a film structure. The film structure is disposed between the base and the covering structure, and includes a flap pair including a first flap and a second flap. The flap pair operates at an ultrasonic rate so that the airflow generating package produces an airflow. A first air opening is formed on the covering structure.

According to one embodiment, a sensor includes a base including a first face, a fixed portion fixed to the first face, a movable portion supported by the fixed portion, a first fixed electrode, and a first opposing fixed electrode. The fixed portion includes a first center in a first plane parallel to the first face. The movable portion includes first and second annular portions. The first fixed electrode includes first and second regions. The first opposing fixed electrode includes first and second opposing regions. The first region is provided between the second annular portion and the first annular portion. The first opposing region is provided between the second annular portion and the first region. The second region is provided between the second annular portion and the first annular portion. The second opposing region is provided between the second annular portion and the second region.

A MEMS AE transducer system is provided that takes advantage of the low power consumption and lightweight characteristics of MEMS AE transducers, while also achieving higher sensing sensitivity. To address the problem of low sensitivity typically associated with MEMS AE transducers, electrical responses of multiple MEMS AE transducers operating at different frequency ranges are combined to increase the bandwidth and sensitivity of the MEMS AE transducer system. As the frequencies are constructive, the combined response on a single channel is the actual summation of two signals with an improved signal to noise ratio. Additionally, each frequency can be decomposed because they are well separated from each other due to the super narrowband response and high Quality factor of MEMS AE transducers.