Measuring method of package thermal strain of radio frequency micro electromechanical system device

Abstract

The invention discloses a measuring method of package thermal strain of radio frequency micro electromechanical system device (RF MEMS), wherein the specified position of a substrate and the RF MEMS device are provided synchronously with a group or a plurality of groups of test units which are load transmission lines consisting of high impedance coplanar waveguide and a plurality of dual-end fixing beam spanned on it periodically; the relation between the mechanical characteristics and the electrical characteristics of the load transmission line is used for determining the RF MEMS device package thermal strain. The invention measures the RF MEMS device package thermal strain by using microwave measuring means; the manufacture of the test unit is compatible to the manufacturing technique of the RF MEMS device, which can be carried out synchronously.

Description

technical field [0001] The invention relates to a method for measuring the thermal strain of a radio frequency micro-electromechanical system device package. Background technique [0002] RF Micro-Electro-Mechanical System, referred to as: RF MEMS. The current measurement methods of thermal strain of MEMS device packaging mainly include: (1) Optical microscopic measurement method. The accuracy is affected by the shape and scale of the structure, and the measurement error is large; (2) Optical interferometry, such as the moiré interference fringe method, the basic principle is to make the grid on the surface of the structure and deform with the structure. The reference gratings are in contact and overlap with each other, thus forming moiré due to interference. The moiré can be analyzed to measure the thermal strain of the package. The disadvantage is that the measurement accuracy is affected by the size and accuracy of the grating, and the measurement accuracy and sensitivit...

AI Technical Summary

Problems solved by technology

The current measurement methods for thermal strain of MEMS device packaging mainly include: (1) Optical microscopic measurement method, the basic principle of which is to measure the deformation of a specific test structure such as a strain gauge under thermal stress to determine the thermal strain of the package. The disadvantage is that the measurement The accuracy is affected by the shape and scale of the structure, and the measurement error is relatively large; (2) Optical interferometry, such as moiré interference fringe method, the basic principle is to combine the specimen grid that is made on the surface of the structure and deforms with the structure with the sample grid that does not deform with the structure The reference gratings are in contact with each other and overlap, thus forming moiré due to interference. The moiré can be analyzed to measure the thermal strain of the package. The disadvantage is that the measurement accuracy is affected by the scale and precision of the grating, and the measurement accuracy and sensitivity are not high.

And the above optical methods all need special measuring instruments and measuring methods

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