Method for preparing high-performance radio frequency micro-electro-mechanical system (MEMS) switch and MEMS switch

A technology of micro-electromechanical switch and micro-electro-mechanical system, which is applied in the components of TV system, generator/motor, micro-electronic micro-structure device, etc., can solve the problems of difficulty in automatic operation, bottleneck in performance improvement, and improve work efficiency. , to ensure reliability and reduce costs

Pending Publication Date: 2018-06-08
SUZHOU XIMEI MICRO NANO SYST CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Due to the rapid development of RF MEMS switches in recent years, the use of silicon substrates to make RF MEMS switches is affected by the dielectric loss of the substrate, and performance improvement faces a bottleneck
However, glass materials with low dielectric loss are difficult to automatically integrate into existing equipment because of their transparency.

Method used

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  • Method for preparing high-performance radio frequency micro-electro-mechanical system (MEMS) switch and MEMS switch
  • Method for preparing high-performance radio frequency micro-electro-mechanical system (MEMS) switch and MEMS switch
  • Method for preparing high-performance radio frequency micro-electro-mechanical system (MEMS) switch and MEMS switch

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] According to the embodiment, a glass substrate is first used, and then a layer of 100nm-500nm doped amorphous silicon film is deposited on the bottom surface of the substrate using a low-temperature process, and then a surface micromachining process and a conventional MEMS process The electromechanical switch is fabricated on the top surface of the substrate; then the adhesive bonding method is used to complete the high air-tight cap processing of the microelectromechanical switch, and finally, the single-sided dry peeling process is used to remove the opaque film from The bottom surface of the substrate is peeled off, and the cap and the substrate are diced through the invisible dicing process, so that each MEMS switch is an independent switch.

Embodiment 2

[0040] According to the embodiment, a glass substrate is first used, and then a layer of 500nm-800nm ​​metal aluminum film is sputtered on the bottom surface of the substrate, and then a surface micromachining process and a conventional MEMS process are used to fabricate the microelectromechanical switch On the top surface of the substrate; then use the anodic bonding method to complete the high air-tight cap processing of the microelectromechanical switch, and finally, use the double-sided wet peeling process to remove the opaque material film from the bottom surface of the substrate Stripping, and dicing the cap and the substrate through the invisible dicing process, so that each MEMS switch is an independent switch.

Embodiment 3

[0042] According to the embodiment, a glass substrate is first used, and then a 500nm metal aluminum film is sputtered on the bottom surface of the substrate. Then, the surface micromachining process and the conventional MEMS process are used to fabricate the metal contact switch on the substrate. The top surface of the substrate; then the anodic bonding method is used to complete the high air-tightness capping treatment of the metal contact switch, and finally, the single-sided wet peeling process is used to remove the opaque material film from the bottom surface of the substrate Stripping, and dicing the cap and the substrate by dicing with a grinding wheel, so that each MEMS switch is an independent switch.

[0043] The present invention has at least the following advantages:

[0044] 1. The present invention uses low-cost glass as a substrate, which effectively reduces its cost.

[0045] 2. The present invention uses glass as the substrate to ensure the high performance of the M...

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PUM

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Abstract

The invention relates to a high-performance radio frequency micro-electro-mechanical system (MEMS) switch and a preparation method thereof. The switch includes a substrate, wherein a 10nm-10000nm thinfilm made of a non-transparent material is deposited on the bottom surface of the substrate, a plurality of micro-electro-mechanical switches are encapsulated on the top surface of the substrate, sealing caps are also arranged on the top surface of the substrate, each of the micro-electro-mechanical switches and the corresponding sealing caps are individually bonded, movable gap areas are arranged between the encapsulated micro-electro-mechanical switches and the sealing caps, so that the sealing caps can be pressed down or sprung up. Through the installation of the thin film and the bondingprocess of the micro-electro-mechanical switches and the sealing caps, an air-tight micro-electro-mechanical switch with excellent radio frequency performance can be prepared by adopting a thin film stripping process. The scheme of the invention ensures the high performance of the MEMS switch by adopting a glass substrate, meets the requirements of automated production of existing equipment, and also ensures the reliability of the MEMS switch by adopting the sealing cap process.

Description

Technical field [0001] The invention relates to a microelectromechanical system switch, in particular to a method for preparing a high-performance radio frequency microelectromechanical system switch and a microelectromechanical switch. Background technique [0002] RF MEMS is an organic combination of microwave radio frequency theory and micro machining technology. It is guided by microwave radio frequency theory and uses microelectronic surface processing and bulk processing to manufacture passive devices. Compared with traditional passive devices, RF MEMS switches not only have extremely excellent microwave performance such as high isolation, low loss, high linearity, low power consumption, and broadband, but also have the advantages of mass production, small size, easy and advanced The integrated characteristics of the microwave radio frequency circuit. [0003] Due to the rapid development of RF MEMS switches in recent years, the use of silicon substrates to make RF MEMS swit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01H59/00H01H49/00B81C1/00B81B7/00B81B7/02
CPCH01H59/0009B81B7/0058B81B7/02B81B2201/01B81C1/00015B81C1/00261B81C2203/01H01H49/00
Inventor 刘泽文李琳松杨中宝印青
Owner SUZHOU XIMEI MICRO NANO SYST CO LTD
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