The invention discloses a
surface micromachining method for a microelectromechanical
system based on a temporary release protective layer and particularly relates to a manufacturing method of an uncooled
infrared detector. The manufacturing method comprises the following steps of: sequentially depositing a
metal layer, an
amorphous silicon sacrificial layer, a first temporary release protective layer of
polyimide on a
CMOS (complentary
metal-
oxide-
semiconductor transistor)
silicon substrate; manufacturing a sensitive layer and a
metal electrode layer in a cascading way, and imaging the sensitive layer, the
electrode layer and a microbridge structure; and finally manufacturing a second temporary release protective layer. When the sacrificial layer is released, firstly XeF2 is adopted for releasing the
amorphous silicon sacrificial layer, and then O2
plasma is utilized for removing the temporary release protective
layers after the release is completed. According to the manufacturing method of the
infrared detector provided by the invention, compared with the prior art, the adopted temporary release protective
layers are completely removed in the later period of manufacturing, thus not causing any influence on the microbridge performance, and being beneficial to the reduction of process difficulty and improvement of the performance of the
detector.