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A novel acoustic wave syntonizer and the corresponding preparation method

A bulk acoustic wave resonator, a new type of technology, applied in electrical components, impedance networks, etc., can solve the problems of increasing the difficulty of process preparation, greater device impact, and difficult to clean, and achieve easy cleaning, high Q value, and release rate. and the effect of the effect improvement

Inactive Publication Date: 2008-07-09
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] 2) Due to the filling of the silicon groove by the sacrificial material, this kind of resonator will inevitably cause surface unevenness, and a chemical mechanical polishing step must be carried out to smooth the surface, which increases the difficulty of process preparation;
[0007] 3) Due to the "concave" shape of the air gap in this resonator, the products released from the sacrificial material are often not easy to clean, which has a great impact on the device

Method used

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  • A novel acoustic wave syntonizer and the corresponding preparation method
  • A novel acoustic wave syntonizer and the corresponding preparation method
  • A novel acoustic wave syntonizer and the corresponding preparation method

Examples

Experimental program
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Embodiment 1

[0035] (1) Using a P-type doped silicon substrate with a resistivity greater than 2Ω·cm (100) crystal orientation, and depositing a layer of germanium (Ge) metal film on it by low-temperature chemical vapor deposition (LPCVD). The preparation conditions of LPCVD are that the temperature is 325° C., the pressure is 300 mtorr, the gas flow rate of germanium is 25 sccm, and the deposition thickness is 0.3 microns. The sacrificial material germanium film layer is wet-etched to form a matrix shape with a length and width of 80 microns and 40 microns, and the etchant is hydrogen peroxide solution (H 2 O / H 2 o 2 / HCl=4 / 3 / 1).

[0036] (2) The silicon dioxide thin film support layer was prepared by plasma enhanced chemical vapor deposition (PECVD). The preparation conditions of PECVD were 200W power, 0.1-0.3 Torr oxygen pressure, 200-250°C substrate temperature, and 200-250°C source temperature. 4 ~ 14 ℃, the induction heater is 10MHz, and the growth thickness is 0.3 microns.

[003...

Embodiment 2

[0043] Replace the sacrificial material with magnesium (Mg) metal, and the rest are the same as in Example 1.

[0044] Among them, the corrosion solution of magnesium metal is dilute HNO 3 solution, where H 2 O: HNO 3 It is 1:20.

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Abstract

The invention discloses a novel film bulk acoustic wave resonator, comprising an underlay, a piezoelectric film, an upper metal electrode layer and a lower metal electrode layer. The invention is characterized in that the invention also comprises a film support layer which is arranged on the underlay and is provided with the air gap structure in the contacting surface with the underlay; the film support layer, the lower metal electrode layer, the piezoelectric film and the upper metal electrode layer are overlapped successively upwards so as to form a resonance area. The resonator overcomes the defects in the prior art, and makes use of surface-micromachining technique and sacrificial layer technique without needing groove etching technique to silicon substrate and without needing chemical mechanical polishing technique. The invention greatly improves the feasibility of technique preparation, reduces production cost to a large extent, still has higher Q value and ensures the characteristics of the resonator.

Description

technical field [0001] The invention relates to the technical field of bulk acoustic wave resonators, in particular to a bulk acoustic wave resonator with a novel air-gap structure and a preparation method using a more simplified manufacturing process. Background technique [0002] Recently, as mobile communication terminals have been greatly developed in the direction of miniaturization and multi-function, people have higher and higher requirements for applications such as front-end filters in mobile communication terminals. Bulk acoustic wave resonators, filters and duplexers that are miniaturized, excellent in performance, and easy to integrate in VLSI have increasingly become a research hotspot at home and abroad. The resonator is the basis of the filter and also the basis of the duplexer composed of the filter. [0003] At present, represented by Avago (formerly Agilent) technology company, based on the air-gap structure, aluminum nitride (AlN) is used as the piezoelec...

Claims

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Application Information

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IPC IPC(8): H03H9/15H03H9/17H03H3/02
Inventor 石玉黄光俊钟慧王华磊蒋欣杜波何泽涛赵宝林
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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