The invention discloses a Micro LED device integrated with an ultra-thin
distributed Bragg reflector and a preparation method of the Micro LED device. The device comprises a
semiconductor epitaxial structure, and the ultra-thin
distributed Bragg reflector is integrated on a non-light extraction surface of the device or between adjacent pixels; the reflector is formed by alternately stacking at least one period of high-refractive-index material
layers and low-refractive-index material
layers, the absolute value of the
refractive index difference between the high-refractive-index material
layers and the low-refractive-index material layers is larger than or equal to 0.5, and the
total thickness of the reflector is smaller than 1000 nm. According to the
distributed Bragg reflector, the characteristics of a high-refractive-index contrast material are utilized,
high reflectivity is achieved under the nanoscale thickness, and the problems that a traditional distributed Bragg reflector is large in thickness, high in stress and poor in micro-nano technology compatibility are effectively solved. The structure can be flexibly integrated at the bottom or the side wall of a
chip or in a pixel isolation groove, the light extraction efficiency of a Micro LED can be remarkably improved, light
crosstalk between pixels is restrained, and the
display contrast ratio and the device reliability are improved.