Preparation method of light color conversion layer of display device

Abstract

The invention relates to the technical field of display devices, in particular to a preparation method of a light-color conversion layer of a display device, and the light-color conversion layer is obtained by the following steps: pasting a color film on a light-emitting surface of a luminous body in the display device, removing a transparent substrate in the color film, and remaining a light-color conversion area on the surface of the display device, namely the light-color conversion layer. The removal of the transparent substrate is beneficial to reducing optical crosstalk between the pixels, so that the influence on the display contrast of the display device is reduced.

Description

Technical Field

[0001] The present invention relates to the field of display technology, and in particular to a method for preparing a light color conversion layer of a display device. Background Art

[0002] Color display devices mainly achieve full-color display by controlling the superposition or arrangement of different color monochromatic spectra to select and synthesize multiple monochromatic spectra.

[0003] At present, the preparation methods of color display devices mainly include the following: (1) Red light chips, green light chips, and blue light chips are used as pixels of the display device. The display color is adjusted by adjusting the brightness ratio of the red light chip, green light chip, and blue light chip, thereby achieving a variety of color combinations. Commonly seen on the market are COB displays. The pixel pitch of such display devices is generally large, usually above 200μm, and chip transfer can be achieved through mass transfer technology. However, when the display device is a micro display screen, the pixel size and pixel pitch are significantly reduced. The pixel size is generally 1μm~50μm, and the pixel pitch is below 20μm, usually 1μm~20μm. In this case, it is more difficult to accurately transfer the red light chip, green light chip, and blue light chip to a display device with such a small pixel pitch for color display through mass transfer.

[0004] (2) Photoresist materials are used to prepare color films on the surface of the light-emitting body to form color pixels, which can meet the color display requirements of display devices such as micro-display screens without the need for mass transfer. However, due to the yield of processes such as photoresist coating and photolithography, defects are prone to occur in local areas of the color film, and it is not easy to repair or replace the local area of ​​the color film corresponding to a single light-emitting body.

[0005] (3) Prepare the color film in advance and stick it to the surface of the light-emitting body by aligning the patches. This method can screen the color film and ensure the quality of the color film stuck to the surface of the light-emitting body, thereby reducing the risk of color film repair or replacement and improving product yield. However, the existing color film is mainly composed of a transparent substrate and a light color conversion area. During the preparation of the color film and when the color film is stuck to the surface of the light-emitting body, the transparent substrate can play a supporting role. When the color film is applied to the display device, the thickness of the transparent substrate is several hundred microns. The transparent substrate of this thickness will form an optical waveguide (that is, when light propagates in a transparent substrate of a certain thickness, it will continuously reflect and conduct horizontally), resulting in light crosstalk between pixels. For example, the unlit pixel a is affected by the light crosstalk of the lit pixel b, resulting in a bright area, such as Figure 16 As shown, the display contrast of the display device is affected. Summary of the Invention

[0006] In response to the above technical problems existing in the prior art, the present invention provides a method for preparing a light color conversion layer of a display device, which can reduce light crosstalk between pixels.

[0007] To achieve the above object, the present invention adopts the following technical solutions: A method for preparing a light color conversion layer of a display device, for preparing the light color conversion layer on the surface of the display device, wherein the light color conversion layer is used for light color conversion, characterized in that the method comprises: providing a display device, wherein the display device comprises an LED chip, wherein the LED chip comprises a substrate and a light emitting element arrayed on the substrate; Prepare a color film, the color film comprising a transparent substrate, a light color conversion region distributed on the transparent substrate, and a receiving layer located between the transparent substrate and the light color conversion region, the receiving layer being used to temporarily connect the transparent substrate and the light color conversion region; Applying the color film to the light-emitting surface of the luminous body, wherein the luminous body corresponds to the light color conversion area one by one; The transparent substrate is removed, and the light color conversion area remaining on the surface of the LED chip is the light color conversion layer.

[0008] It is further characterized in that

[0009] The preparation of the color film includes: providing a transparent substrate; Disposing a temporary connection material on the surface of the transparent substrate to form a receiving layer; A fluorescent material is provided on the entire surface including the surface of the receiving layer to form a light color conversion area.

[0010] Furthermore, the temporary connection material is Cr or polyimide.

[0011] Furthermore, Cr is deposited on the surface of the transparent substrate by using a magnetron sputtering coating process, an electroplating process or an electron beam evaporation process, or polyimide is coated on the surface of the transparent substrate by using a spin coating process.

[0012] Furthermore, the substrate is removed by using a laser lift-off process or a wet etching process.

[0013] Furthermore, the etching solution used in the wet etching process includes ammonium cerium nitrate.

[0014] Furthermore, the fluorescent material includes phosphor, quantum dot material or perovskite material.

[0015] Furthermore, the transparent substrate is a glass substrate or a sapphire substrate.

[0016] Furthermore, the LED chip is an LED integrated chip, and the LED integrated chip emits blue light.

[0017] Furthermore, the color film also includes a light-blocking layer, which divides the light color conversion area into several areas, including: a red light area, a green light area, and a blue light area. The blue light emitted by the LED integrated chip is converted into red light through the red light area and converted into green light through the green light area. The blue light area is a transparent area or an empty area. The blue light emitted by the LED integrated chip is emitted as blue light through the blue light area.

[0018] Furthermore, the light-blocking layer is a black material layer or a gray material layer, and the material includes but is not limited to at least one of Al, Ti, and Au.

[0019] Furthermore, the light-blocking layer includes a first light-blocking layer and a second light-blocking layer, and the first light-blocking layer and the second light-blocking layer are stacked in sequence from bottom to top.

[0020] Furthermore, the light color conversion area is formed on the surface of the receiving layer, comprising: Using photolithography, deposition and stripping processes, a light-blocking layer distributed in an array is prepared on the surface of the receiving layer; The red light region, the green light region, and the blue light region are prepared in the gaps between the light-blocking layers.

[0021] Furthermore, the first light-blocking layer is prepared on the surface of the receiving layer by using photolithography, deposition and lift-off processes.

[0022] Furthermore, the red light region, the green light region, and the blue light region are prepared respectively by using a photolithography and etching process.

[0023] Furthermore, the second light-blocking layer is prepared on top of the first light-blocking layer by using photolithography, deposition and stripping processes. The second light-blocking layer is wrapped around the sides of the red light area, the green light area and the blue light area. The first light-blocking layer and the second light-blocking layer are stacked in sequence from bottom to top.

[0024] Furthermore, the light-emitting body includes a first-type GaN layer, a light-emitting layer, and a second-type GaN layer distributed in sequence from bottom to top.

[0025] Furthermore, the first-type GaN layer is an N-type GaN layer, the light-emitting layer is a quantum well layer, and the second-type GaN layer is a P-type GaN layer.

[0026] Furthermore, before applying the color film, the color film is cut based on the size of the LED chip.

[0027] The above-mentioned scheme of the present invention can achieve the following beneficial effects: the method of the present application is used to prepare a light color conversion layer on the surface of a display device. The light color conversion layer is obtained by removing the transparent substrate from the color film, and is used to convert the color of the light of the light-emitting body. The removal of the transparent substrate is conducive to reducing the light crosstalk between pixels, thereby reducing the impact on the display contrast of the display device. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a schematic diagram of the cross-sectional structure of the display device (without color filter); Figure 2 Schematic diagram of the top view of the LED integrated chip; Figure 3 It is a schematic diagram of a partial cross-sectional structure of an LED integrated chip; Figure 4 This is a schematic diagram of the cross-sectional structure after a receiving layer is formed on a transparent substrate in the color film preparation method of the present application; Figure 5 This is a schematic diagram of the cross-sectional structure after the first light-blocking layer is prepared in the color film preparation method of the present application; Figure 6 This is a schematic diagram of the cross-sectional structure after coating red quantum dot photoresist in the color film preparation method of this application; Figure 7 This is a schematic diagram of the cross-sectional structure after the red light area is prepared in the color film preparation method of this application; Figure 8 This is a schematic diagram of the cross-sectional structure after coating the green quantum dot photoresist in the color film preparation method of this application; Figure 9 This is a schematic diagram of the cross-sectional structure after the green light area is prepared in the color film preparation method of this application; Figure 10 This is a schematic diagram of the cross-sectional structure after coating with transparent photoresist in the color film preparation method of the present application; Figure 11 This is a schematic diagram of the cross-sectional structure after the transparent area is prepared in the color film preparation method of this application; Figure 12 This is a schematic cross-sectional view of another embodiment of the color film preparation method of the present application after a hollow area is formed; Figure 13 This is a schematic diagram of the cross-sectional structure after the second light-blocking layer is prepared in the color film preparation method of the present application; Figure 14 This is a schematic diagram of the cross-sectional structure of the LED integrated chip after the light-emitting surface of the LED chip is coated with a color film; Figure 15 This is a schematic cross-sectional view of the color filter in the display device of the present application after the transparent substrate is removed (i.e., a light color conversion layer is formed); Figure 16 This is a diagram showing the actual effect of optical crosstalk occurring in an existing display device.

[0029] Reference numerals: LED integrated chip 1, color film 2, receiving layer 3, driver chip 4, unlit pixel a, lit pixel b; Substrate 101, light emitting body 102; A first-type GaN layer 1021, a light-emitting layer 1022, a second-type GaN layer 1023, and an insulating layer 1024; Transparent substrate 201, first light-blocking layer 203, second light-blocking layer 204; Red quantum dot photoresist 400, green quantum dot photoresist 500, transparent photoresist 600; Red light region 40 , green light region 50 , and blue light region 60 . DETAILED DESCRIPTION

[0030] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0031] It should be noted that the terms "including" and "having" and any variations thereof in the specification and claims of the present invention and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, apparatus, product or equipment that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or are inherent to these processes, methods, products or equipment.

[0032] The purpose of this application is to prepare a light color conversion layer with light color conversion function on the surface of a display device. The monochromatic spectrum emitted by the light emitter is selected and synthesized under the action of the light color conversion layer to achieve full-color display. The following provides a specific embodiment of the preparation of the light color conversion layer of a display device. The specific preparation steps include: S1. Provide a display device, refer to Figure 1 In this embodiment, the display device includes an LED integrated chip 1 and a driver chip (not shown). The LED integrated chip 1 and the driver chip are flip-chip interconnected. In this embodiment, the LED integrated chip emits blue light, and the driver chip is a CMOS driver chip, such as the AMLED061 model from Beijing Digital Optical Core.

[0033] It should be noted that, in another embodiment, the LED integrated chip 1 can emit green light or red light. When designing a display device, a suitable color film 2 is selected according to the color of the light emitted by the LED integrated chip 1, and the color of the light emitted by the LED integrated chip 1 is converted into at least three different primary colors: red, green, and blue through the color film 2.

[0034] refer to Figure 2 、 Figure 3 The LED integrated chip 1 includes a substrate 101 and light-emitting bodies 102 arrayed on the substrate 101. The substrate 101 is sapphire, and each light-emitting body 102 includes a first-type GaN layer 1021, a light-emitting layer 1022, a second-type GaN layer 1023, a current spreading layer, a reflective layer, and an insulating layer 1024, which are sequentially distributed from bottom to top. Among them, the first-type GaN layer 1021 is an N-type GaN layer, the light-emitting layer 1022 is a quantum well layer, and the second-type GaN layer 1023 is a P-type GaN layer. In this embodiment, the current spreading layer and the reflective layer are located between the insulating layer 1024 and the second-type GaN layer 1023. The current spreading layer is an ITO current spreading layer, and the reflective layer is a DBR reflective layer or a metal reflective layer, which is used to reflect the light emitted by the light-emitting body, which is beneficial to further improve the light extraction efficiency of the light-emitting body; the material of the insulating layer 1024 is preferably SiO2 or SiN.

[0035] The LED integrated chip 1 also includes a P electrode and an N electrode. The bottom end of the P electrode penetrates the insulating layer and is electrically connected to the P-type GaN layer in the light-emitting element through the current spreading layer. The N electrode is electrically connected to the N-type GaN layer. When the LED integrated chip 1 is flip-chip interconnected with the driver chip, the N electrode is soldered to the corresponding negative electrode pad on the driver chip, and the P electrode is soldered to the corresponding positive electrode pad on the driver chip.

[0036] S2. Prepare the color film 2. The specific preparation steps include: S21. Provide a substrate. The substrate is a transparent substrate 201 made of glass or sapphire.

[0037] S22, set a temporary connection material on the surface of the substrate to form a receiving layer 3, reference Figure 4 The temporary connection material is Cr or polyimide. In this embodiment, Cr is deposited on the surface of the transparent substrate 201 by magnetron sputtering, electroplating or electron beam evaporation, or polyimide is coated on the surface of the transparent substrate 201 by spin coating.

[0038] S23. A fluorescent material is provided on the entire surface including the surface of the receiving layer 3 to form a light color conversion zone. The fluorescent material includes phosphor, quantum dot material, or perovskite material. The light color conversion zone is used to convert the color of light into at least three primary colors: red, green, and blue, corresponding to the red light region 40, the green light region 50, and the blue light region 60, respectively. The blue light emitted by the LED integrated chip 1 is converted into red light by the red light region, the blue light emitted by the LED chip is converted into green light by the green light region, and the blue light emitted by the LED chip is emitted as blue light by the blue light region. The red light region 40, the green light region 50, and the blue light region 60 are spaced apart from left to right and / or spaced apart from bottom to top. The light emitters in the corresponding LED integrated chip are evenly spaced and arranged in an array.

[0039] It should be noted that, in another embodiment, one red light region 40 , two green light regions 50 , and one blue light region 60 are distributed in a rectangular shape.

[0040] The color film structure prepared by the above method includes: a transparent substrate 201 for supporting the light color conversion zone, a light color conversion zone for light color conversion, and a receiving layer 3 for temporarily connecting the transparent substrate 201 and the light color conversion zone. The receiving layer 3 has the function of facilitating the peeling of the transparent substrate 201. The transparent substrate 201, the receiving layer 3, and the light color conversion zone are distributed in sequence from bottom to top.

[0041] It should be noted that, in another embodiment, the color filter further includes a light-blocking layer, and the light-blocking layer array is distributed on the surface of the receiving layer 3 to divide the light color conversion area, and the light-blocking layer corresponds to the gap between two adjacent light-emitting bodies.

[0042] The light-blocking layer is a black material layer or a gray material layer, which is used to improve the display contrast of the display device. The light-blocking layer material includes but is not limited to at least one of Al, Ti, and Au. In this embodiment, the light-blocking layer includes a first light-blocking layer 203 and a second light-blocking layer 204, and the first light-blocking layer 203 and the second light-blocking layer 204 are stacked in sequence from bottom to top. The first light-blocking layer 203 not only has a light-shielding effect, but is also used to separate the red light area, the green light area, and the blue light area. The second light-blocking layer 204 is wrapped around the sides of the red light area 40, the green light area 50, and the blue light area 60 to prevent the side light of the light-emitting body 102 from forming light crosstalk with the adjacent areas after the light color is converted by the red light area 40, the green light area 50, and the blue light area 60, and at the same time helps to improve the display contrast.

[0043] In this embodiment, the display area of ​​the display device can be divided into a number of pixel groups arranged in an array. Each pixel group contains three pixels: a single light emitter and a corresponding red light region 40 constitute a red pixel, a single light emitter and a corresponding green light region constitute a green pixel, and a single light emitter and a corresponding blue light region constitute a blue pixel. The red pixels, green pixels, and blue pixels are sequentially spaced from left to right and / or from bottom to top. It should be noted that in another embodiment, the red pixels, green pixels, and blue pixels are arranged in a "pin" shape, or each pixel group contains four pixels: one red pixel, two green pixels, and one blue pixel, and the four pixels are arranged in a rectangular shape. Before the transparent substrate 201 is removed, the spacing between adjacent pixels is small, less than 20 μm, so optical crosstalk is likely to occur between the adjacent pixels. If the spacing between adjacent pixel groups is also small, less than 20 μm, optical crosstalk is likely to occur between the adjacent pixel groups, thereby affecting the display contrast. Removing the transparent substrate using the method of the present application can reduce optical crosstalk.

[0044] The specific steps of preparing the light color conversion area include: using photolithography, deposition and stripping processes to prepare an array of light-blocking layers on the surface of the receiving layer 3; and preparing the light color conversion area in the gaps between the light-blocking layers.

[0045] Specifically, S231, using photolithography, deposition and stripping processes to prepare an array-distributed first light-blocking layer 203 on the surface of the receiving layer 3, including: S2311, coating a first photoresist on the entire surface including the surface of the receiving layer 3; S2312, exposing and developing the first photoresist based on the first mask; S2313, using a magnetron sputtering coating process, an electroplating process, or an electron beam evaporation process to deposit a black material or a gray material on the entire surface including the first photoresist surface; S2314, based on the developed image, the black material or the gray material is stripped to obtain the first light blocking layer 203 distributed in an array, referring to Figure 5 .

[0046] It should be noted that, in another embodiment, when the black material or the gray material is a photoresist, a photolithography etching process can be used to prepare the first light-blocking layer 203 distributed in an array, specifically including: coating the black material or the gray material on the entire surface including the surface of the receiving layer 3 to form a black material layer or a gray material layer; exposing the photoresist based on a mask; and developing to form the black material layer or the gray material layer into the first light-blocking layer 203 distributed in an array.

[0047] S232, the specific steps of preparing the light color conversion area include: S2321, coating the entire surface including the surface of the first light blocking layer 203 with red quantum dot photoresist 400, referring to Figure 6; S2322, exposing the red quantum dot photoresist 400 based on the second mask; S2323, development, removing the red quantum dot photoresist 400 outside the red light area to be prepared, forming a red light area 40, reference Figure 7 ; S2324, coating the entire surface including the red light region 40 and the first light blocking layer 203 with a green quantum dot photoresist 500, referring to Figure 8 ; S2325, exposing the green quantum dot photoresist 500 based on the third mask; S2326, development, removing the green quantum dot photoresist 500 outside the green light area to be prepared, forming a green light area 50, reference Figure 9 ; S2327, coating the entire surface including the red light region 40, the green light region 50, and the first light blocking layer 203 with a transparent photoresist 600, referring to Figure 10 ; S2328, exposing the transparent photoresist 600 based on the fourth mask; S2329, developing, removing the transparent photoresist 600 outside the blue light area to be prepared, forming a transparent area, namely the blue light area 60, reference Figure 11 .

[0048] It should be noted that, in another embodiment, the steps of preparing each light color conversion area include the above steps S2321 to S2326. In this embodiment, no other material is set at the location of the blue light area to be prepared, that is, it is an empty area. Figure 12 The blue light emitted by the LED integrated chip is directly emitted through the empty area, forming a blue light area 60.

[0049] S233, using photolithography, deposition and stripping processes to prepare an array-distributed second light-blocking layer 204 on the first light-blocking layer 203, including: S2331, coating a second photoresist on the entire surface including the surface of the first light-blocking layer 203, the red light region 40, the green light region 50, and the blue light region 60; S2332, exposing and developing the second photoresist based on the fifth mask; S2333, using a magnetron sputtering coating process, an electroplating process, or an electron beam evaporation process to deposit a black material or a gray material on the entire surface including the second photoresist surface; S2334, based on the developed image, the black material or the gray material is stripped to obtain the second light-blocking layer 204 distributed in an array, referring to Figure 13The second light-blocking layer 204 is distributed above the first light-blocking layer 203 and wrapped around the sides of the red light region 40, the green light region 50, and the blue light region 60. The first light-blocking layer 203 and the second light-blocking layer 204 are stacked in sequence from bottom to top.

[0050] S3. Apply the color film 2 to the entire surface, including the light-emitting surface of the luminous element 102. The luminous element 102 corresponds to the light color conversion zone. Before applying the color film 2, cut the color film 2 prepared in step S2 based on the size of the display device. In this embodiment, the display device is a Micro LED microdisplay with an overall size of 0.61 inches (i.e., 1.5 cm), and the size of a single luminous element is 30 μm.

[0051] S4. Using a laser lift-off process or a wet etching process, the transparent substrate 201 is removed, leaving the light color conversion region (i.e., the light color conversion layer) on the surface of the display device. Specifically, when the connecting material between the transparent substrate 201 and the light color conversion region is chromium (i.e., Cr), the chromium material is etched using an etching solution of ammonium cerium nitrate. The ammonium cerium nitrate reacts with the chromium to generate trivalent chromium ions.

[0052] It should be noted that when the connecting material between the transparent substrate 201 and the light-color conversion region is polyimide, laser lift-off is used to remove the transparent substrate 201. The remaining light-color conversion region and receiving layer 3 (i.e., the polyimide layer) are stacked sequentially from bottom to top on the light-emitting surface of the display device. During laser lift-off, laser light passes through the transparent substrate 201 and strikes the polyimide layer. The laser energy weakens the adhesive force between the polyimide and the surface of the transparent substrate 201, separating the transparent substrate 201.

[0053] The display device prepared by the method of the present application is a full-color LED display device. When the display device is working, the driver chip outputs a control signal, and the control signal is sent to the light-emitting body in the LED integrated chip through the corresponding positive electrode pad, negative electrode pad, P electrode, and N electrode, controlling the light-emitting body 102 to emit blue light. The blue light is converted into red light, green light, and blue light through the red light area, green light area, and blue light area in the light color conversion layer. The red light, green light, and blue light colors are mixed to form the required color, thereby realizing full-color display.

[0054] It is understood that the above specific description of the present invention is only used to illustrate the present invention and is not limited to the technical solutions described in the embodiments of the present invention. Those skilled in the art should understand that the present invention can still be modified or replaced with equivalents to achieve the same technical effects; as long as the use requirements are met, they are all within the scope of protection of the present invention.

Claims

1. A method for preparing a light color conversion layer of a display device, for preparing a light color conversion layer on the surface of a display device, wherein the light color conversion layer is used for light color conversion, characterized in that: The method comprises: providing a display device, the display device comprising an LED chip, the LED chip comprising a substrate (101) and light-emitting bodies (102) distributed in an array on the substrate (101); A color film (2) is prepared, wherein the color film (2) comprises a transparent substrate (201), a light color conversion region (202) distributed on the transparent substrate (201), and a connecting layer (3) located between the transparent substrate (201) and the light color conversion region (202), wherein the connecting layer (3) is used to temporarily connect the transparent substrate (201) and the light color conversion region (202); The color film (2) is applied to the light-emitting surface of the luminous body, and the luminous body (102) corresponds to the light color conversion area (202) one by one; The transparent substrate (201) is removed, and the light color conversion area (202) remaining on the surface of the LED chip is the light color conversion layer.

2. The method for preparing a light color conversion layer of a display device according to claim 1, wherein: The preparation of the color film (2) comprises: providing a transparent substrate (201); A temporary connection material is provided on the surface of the transparent substrate (201) to form a receiving layer (3); A fluorescent material is provided on the entire surface including the surface of the receiving layer to form a light color conversion area (202), wherein the light color conversion area (202) is used to convert the color of light into at least three primary colors: red, green, and blue, corresponding to the red light area, the green light area, and the blue light area, respectively.

3. The method for preparing a light color conversion layer of a display device according to claim 2, wherein: The temporary connection material is Cr or polyimide, and the fluorescent material includes fluorescent powder, quantum dot material or perovskite material.

4. The method for preparing a light color conversion layer of a display device according to claim 3, wherein: Cr is deposited on the surface of the transparent substrate (201) by using a magnetron sputtering coating process, an electroplating process or an electron beam evaporation process, or polyimide is coated on the surface of the transparent substrate (201) by using a spin coating process.

5. The method for preparing a light color conversion layer of a display device according to claim 2 or 4, characterized in that: The transparent substrate (201) is removed by adopting a laser lift-off process or a wet etching process, wherein the etching solution adopted in the wet etching process includes ammonium cerium nitrate.

6. The method for preparing a light color conversion layer of a display device according to claim 5, characterized in that: The LED chip is an LED integrated chip, and the color film further includes a light-blocking layer. The light-blocking layer divides the light color conversion area (202) into several areas, including the red light area, the green light area, and the blue light area. The blue light emitted by the LED integrated chip is converted into red light through the red light area and converted into green light through the green light area. The blue light area is a transparent area or an empty area. The blue light emitted by the LED chip is emitted as blue light through the blue light area.

7. The method for preparing a light color conversion layer of a display device according to claim 6, wherein: The light-blocking layer is a black material layer or a gray material layer, and the material includes at least one of Al, Ti, and Au.

8. The method for preparing a light color conversion layer of a display device according to claim 7, wherein: Producing the light color conversion area (202) on the surface of the receiving layer (3) includes: Using photolithography, deposition and stripping processes, a light-blocking layer distributed in an array is prepared on the surface of the receiving layer (3); The red light region, the green light region, and the blue light region are prepared in the gaps between the light-blocking layers.

9. The method for preparing a light color conversion layer of a display device according to claim 7, wherein: The light-blocking layer comprises a first light-blocking layer (203) and a second light-blocking layer (204), wherein the first light-blocking layer (203) and the second light-blocking layer (204) are stacked in sequence from bottom to top; the light color conversion area (202) is produced on the surface of the receiving layer (3), comprising: Using photolithography, deposition and stripping processes, the first light-blocking layer (203) is prepared on the surface of the receiving layer (3); Using a photolithography and etching process, the red light region, the green light region, and the blue light region are respectively prepared in the gaps between the first light-blocking layers (203); The second light-blocking layer (204) is prepared on the first light-blocking layer (203) by using photolithography, deposition and stripping processes. The second light-blocking layer (204) is wrapped around the sides of the red light region, the green light region and the blue light region. The first light-blocking layer (203) and the second light-blocking layer (204) are stacked in sequence from bottom to top.

10. The method for preparing a light color conversion layer of a display device according to claim 1, wherein: Before applying the color film (2), the color film (2) is cut based on the size of the LED chip.

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