81 results about "MicroLED" patented technology

The present disclosure provides an automated die bonding of LED substrates system in which an automated die bonding inspection module is used to determine the quality of incoming processing material and an automated die bonding process module is used to process the processing material, an automated die bonding post-process module is used to inspect the resultant process material for acceptability, and an automated die bonding historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated die bonding process module and an automated die bonding integration module to update the automated die bonding process module based upon the results of the automated die bonding historical module.

The invention discloses a device and a method for testing a MicroLED wafer array. The device comprises a wafer slide holder, a MicroLED test device and a photometric integrating sphere, a MicroLED wafer is arranged on the wafer slide holder; the MicroLED wafer is provided with a MicroLED wafer array, and the MicroLED wafer array is provided with a plurality of The MicroLED wafer array is composed of a plurality of MicroLEDs which are distributed in an array form; the MicroLED test equipment comprises a flexible electrode and a TFT (Thin Film Transistor) addressing circuit; the wafer slide holder is used for enabling a MicroLED wafer to be aligned with the MicroLED test equipment so as to enable the MicroLED to be lightened, and visible light emitted after the MicroLED is lightened is transmitted to the photometric integrating sphere through the MicroLED test equipment; the photometric integrating sphere is used for testing optical parameters of the MicroLED; the optical parameters comprise optical power and wavelength; and the TFT addressing circuit is used for providing current, voltage and position parameters of the MicroLED. According to the device and the method, the optical parameters and the position of each MicroLED in the MicroLED wafer array can be rapidly tested in a lossless and high-throughput manner.

The present disclosure provides an automated repair of LED substrates system in which an automated repair inspection module is used to determine the quality of incoming processing material an automated repair process module is used to process the processing material, an automated repair post-process module is used to inspect the resultant process material for acceptability, and an automated repair historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated repair process module, and an automated repair integration module to update the automated repair process module based upon the results of the automated repair historical module.

A light-emitting apparatus includes a carrier substrate, an array of light-emitting devices on the carrier substrate, and carrier posts connecting the light-emitting devices to the carrier substrate spaced apart from the carrier substrate. The carrier post forms the only attachment between each light-emitting device and the carrier substrate, is positioned within the areal extent of the light-emitting device, and is attached to the light-emitting device at an attachment area thereof that occupies only a fractional portion of the areal extent of the light-emitting device. A transfer substrate can adhere to the light-emitting devices and then be separated from the carrier substrate with the light-emitting devices adhered thereto. The light-emitting devices can then be attached to a backplane, interconnect layer, or circuit board and the transfer layer removed leaving the behind the attached light emitting devices.

Processors may interface with memory using microLED-based optical connections. MicroLEDs and photodetectors of the optical connections may be packaged outside of a package for the processor, packaged with a processor, or may be bonded to a surface of the processor. The optical connections may make use of interface chiplets. Some of the interface chiplets may include memory controller circuitry.

A method of forming a micro light-emitting diode (microLED) array may include forming pixel isolation structures on a sacrificial substrate, and mounting the microLEDs on a separate backplane. The processes that forms the pixel isolation structures, and which may damage the backplane or microLEDs can be separately performed on the sacrificial substrate. The pixel isolation structures can then be attached to the backplane and the sacrificial substrate can be removed. This allows the formation of the pixel isolation structures to be isolated, the microLEDs to be tested early in the process, and the interface between the microLEDs and subsequent layers to be free of adhesive.

A micro-light-emitting diode (microLED) display panel includes microLEDs disposed on a display area, which is divided into a plurality of blocks; drivers respectively disposed on the blocks; and probe pads disposed within each block, the probe pads being electrically connected to corresponding microLEDs via corresponding electric wires. The probe pads and the electric wires of a corresponding block are disposed locally and confined to the corresponding block, and are not connected elsewhere beyond the corresponding block.

The present disclosure provides an automated film measurement of microLED substrates system in which an automated film measurement inspection module is used to determine the quality of incoming processing material, and an automated film measurement process module is used to process the processing material, an automated film measurement post-process module is used to inspect the resultant process material for acceptability, and an automated film measurement historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated film measurement process module and an automated film measurement integration module to update the automated film measurement process module based upon the results of the automated film measurement historical module.

A micro-light-emitting diode (microLED) display panel includes a plurality of microLEDs arranged in rows and columns. Anodes of microLEDs in a same row are connected to a corresponding data line, and cathodes of pixels in a same column are connected to a corresponding group of common lines, each of which is connected to cathodes of microLEDs of different colors.

An augmented reality (AR) display includes a light engine having a three-color microscopic light-emitting diode (microLED) panel and an array of microlenses disposed at the three-color microLED panel and configured to redirect collimated projected light from the three-color microLED panel to an exit pupil of the light engine. A microlens of the array of the microlenses partially covers a pixel of the three-color microLED panel so that a red pixel of the three-color microLED panel is substantially aligned with an optical axis of each microlens and a blue pixel and a green pixel are substantially offset from the microlens. A waveguide of the AR display includes an input coupler (IC) with an entrance pupil that is substantially coplanar with the light engine.

Optical chip-to-chip interconnects may use microLEDs as light sources. The interconnected chips may be on a same substrate. A pair of endpoint chips may each have associated optical transceiver subsystems, with transceiver circuitry in transceiver chips. Optical communications may be provided between the optical transceiver subsystems, with the optical transceiver subsystems in communication with their associated endpoint chips by way of metal layers in the substrate.

Embodiments of a display device are described. A display device includes a substrate (204) and a sub-pixel (R1, R2) configured to emit a display light having an emission spectrum with a first peak wavelength and a second peak wavelength. The sub-pixel includes a microLED (218) disposed on the substrate and a NS-based CC layer (220) disposed on the microLED. The NS-based CC layer includes QDs configured to emit a first light having the first peak wavelength. The microLED is configured to emit a second light having the second peak wavelength. A first portion of the second light is absorbed by the QDs and down-converted to the first light and a second portion of the second light is transmitted through the NS-based CC layer (220).

The present disclosure provides an automated electroluminescence testing equipment of LED substrates system in which an automated electroluminescence testing equipment inspection module is used to determine quality of incoming processing material, and an automated electroluminescence testing equipment process module is used to process the processing material, an automated electroluminescence testing equipment post-process module is used to inspect the resultant process material for acceptability, and an automated electroluminescence testing equipment historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated electroluminescence testing equipment process module, and an automated electroluminescence testing equipment integration module to update the automated electroluminescence testing equipment process module based upon the results of the automated electroluminescence testing equipment historical module.

The invention relates to the technical field of MicroLED display, and particularly discloses a nanocrystalline color conversion layer for a MicroLED and a preparation method of the nanocrystalline color conversion layer. A nanocrystalline color conversion layer is formed at a low temperature of 150-400 DEG C by co-evaporating a perovskite precursor and an organic matrix material containing a P = O / S = O / C = O group. A magnetic metal mask is adopted, the distance between the mask and a substrate is controlled to be smaller than or equal to 0.5 mm, and a high-resolution patterned nanocrystalline color conversion layer is achieved. The dynamic vacuum degree of 5 * 10 <-4 > to 5 * 10 <-5 > Pa is maintained in the evaporation process, the deposition rate is 0.01-5 nm / s, the thickness of the obtained color conversion layer is 500-3000 nm, and the interface roughness Ra is smaller than 10 nm. The optical property of the nanocrystal is improved in situ through the matrix material, so that the fluorescence quantum yield reaches 85% or above, and the color gamut is gt; a 120% NTSC; mask design and process parameters are optimized, blockage is avoided, and pattern precision is improved; the full-dry process is compatible with mass production, and the yield is greater than 95%. The color conversion layer solves the problems of efficiency and stability in MicroLED full-color conversion.

Aspects of the disclosure include display units having shaped micro reflectors with integrated side-fire micro light-emitting diodes (micro LEDs) which can be stand-alone or laminated into glass or laminated glass assemblies (e.g., a glass panel of a vehicle). An exemplary display unit includes a side-fire micro light-emitting diode on a surface of a display substrate. The side-fire micro light-emitting diode is coated with a first reflective layer such that light is emitted from an uncoated sidewall. The display unit includes a shaped micro reflector coated with a second reflective layer on the display substrate. The shaped micro reflector includes a tapered sidewall positioned to redirect, via reflection against the second reflective layer, light from the uncoated sidewall of the side-fire micro light-emitting diode from an emitted angle to a reflection angle. The second reflective layer is formed directly on opposite sidewalls and a bottommost surface of the shaped micro reflector.

A new design for a near-UV emitting quantum well structure exhibits a small electron-hole wavefunction overlap. The small electron-hole overlap is beneficial for near UV-microLEDs because small overlap results in a high carrier density even at low current densities. Due to the higher carrier density, non-radiative recombination centers are saturated at relatively low current density in the newly disclosed design. The new design is therefore more robust against non-recombination losses at both intrinsic and surface defects, and capable of higher efficiency than conventional designs at low current densities.

The invention relates to an optoelectronic arrangement for optical data communication, comprising a plurality of optoelectronic components, in particular microLEDs, each having a main emission area that can be attached to one or more optical fibers; wherein the plurality of optoelectronic components each comprise a semiconductor layer stack with an active area configured to emit light of a first wavelength. A light source is configured to emit excitation light of a second wavelength, the second wavelength being shorter than the first wavelength and arranged to illuminate the active areas and thereby generate photoluminescent light.The optoelectronic arrangement is configured to modulate the generation of photoluminescent light by individually supplying a particularly inverted voltage and / or current signal to the semiconductor layer stack of the multitude of optoelectronic components.

A light-emitting apparatus includes a carrier substrate, an array of lightemitting devices on the carrier substrate, and carrier posts connecting the lightemitting devices to the carrier substrate spaced apart from the carrier substrate. The carrier post forms the only attachment between each light-5 emitting device and the carrier substrate, is positioned within the areal extent of the light-emitting device, and is attached to the light-emitting device at an attachment area thereof that occupies only a fractional portion of the areal extent of the light-emitting device. A transfer substrate can adhere to the light-emitting devices and then be separated 10 from the carrier substrate with the light-emitting devices adhered thereto. The lightemitting devices can then be attached to a backplane, interconnect layer, or circuit board and the transfer layer removed leaving the behind the attached light emitting devices.

A connector assembly for a fiber-optic bundle may provide for a ninety degree bend in the fiber-optic bundle. The connector assembly may be used in a microLED-based optical interconnect. The microLED-based optical interconnect may provide for data and / or clock communication from an array of microLEDs to an array of photodetectors, with a fiber-optic bundle providing an optical transmission medium coupling light between the microLEDs and the photodetectors. Fiber elements of the fiber-optic bundle may be bound together about ends of the fiber elements, but loose in an area of the bend.

The present invention discloses methods to reduce a surface reflection and improve a contrast in an optoelectronic system with microdevices that may comprise of microLED's, microsensors, MEMS, or another type of semiconductor or optoelectronic device. In particular, there is use of black matrix, pixel circuit layers, reflective layers, optical structures, photo definable polymer and dielectrics. Here the optical structure may comprise wavelength tuning materials.

This invention relates to the field of optical signal demodulation, specifically to a parallel optical signal modulation and demodulation method and system based on MicroLED array optical interconnects, comprising: a data acquisition module for acquiring raw data from the external environment or equipment and converting it into a form suitable for subsequent processing; a data processing module for receiving information from the data acquisition module and preprocessing it; and a data analysis module. The overall architecture of high-speed DSP+MicroLED channels breaks away from the traditional approach of "hundreds of channels, DSP-free, wide but slow." By introducing SerDes and DSP modulation and demodulation, the single-channel rate is increased by an order of magnitude, achieving a total bandwidth of ≥120Gbps with ≤32 channels. Simultaneously, single-channel 10–20Gbps OOK / PAM4 modulation is achieved: clearly defining high-order modulation of MicroLED under GHz-level bandwidth conditions, overcoming the carrier lifetime limitations of MicroLED, and ensuring low bit error rate through pre-emphasis, equalization, and FEC.

This invention discloses a data processing method and system for adaptive MicroLED array capabilities. The method is applied at the transmitting end and includes: acquiring target transmission data; allocating the target transmission data according to a predetermined transmission rate corresponding to each MicroLED channel to obtain channel transmission data corresponding to each MicroLED channel; encoding the corresponding channel transmission data based on a predetermined repetition factor corresponding to each MicroLED channel to obtain encoded transmission data; driving the MicroLEDs of each channel to emit light according to the encoded transmission data, so that the receiving end can convert the received optical signal into an electrical signal and extract electrical data; decoding the received electrical data based on the repetition factor to obtain the corresponding channel transmission data; and merging the data from each channel transmission data to obtain the target transmission data.

The present disclosure relates to integration of microdriver arrays in microdevice array structures enabling higher performance with multi-functionality capability. The present invention further discloses microLED and microsensor embedded display systems and interfaces, which are primarily visual output devices with limited interactive capabilities. Here invention a Multifunctional Display Hub integrates microLEDs and various microsensors within a single substrate.

A microlight emitting diode (LED) system and method of transmitting data are disclosed. The system includes either a first array that contains multiple subarrays or a second array. Each subarray includes multiple independently-addressable single color microLEDs that emit light of different colors and are independently modulated for data communication to another microLED array. The second array contains at least one independently-addressable polychromic microLED. Each polychromic microLED has multiple independently-addressable active regions that emit different colors and that are independently modulated for data transmission to the other microLED array. A photodetector array receives data as multi-color light from the other microLED array and has multiple photodetectors each tuned for a specific color.

Integrated circuit chips may be optically interconnected using microLEDs. Some interconnections may be vertically-launched parallel optical links. Some interconnections may be planar-launched parallel optical links.

In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension of less than 5 μm along a horizontal direction of the micro-LED and a contact formed on a non-horizontal surface of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs) and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that the micro-LED has a current density of 50 A / cm. 2 The contact is configured to inject holes through the p-type semiconductor layer into the multiple QWs when driven with an effective current density of less than 1 μm. The injected holes diffuse laterally in the multiple QWs over a distance greater than 1 micrometer (μm).

This invention discloses a MicroLED microdisplay chip with integrated multiple interfaces and over-temperature control, relating to the field of display chip technology. The chip includes the following steps: Step 1: The MicroLED microdisplay chip includes a CMOS driving circuit and provides multiple interfaces; Step 2: The light-emitting layer of the MicroLED chip uses a sapphire or silicon substrate and includes a grown GaN layer; Step 3: The MicroLED driver is a silicon-based CMOS driving circuit; Step 4: The CMOS driving circuit can provide current input; Step 5: The MicroLED display chip includes a temperature sensor. The driving current for a single pixel is set to 150uA. ～ With a standard current of 1.95mA and a current of 2.35mA, the brightness of MicroLEDs is significantly improved. A temperature monitoring circuit was designed to prevent damage to the driver IC. The over-temperature detection function continuously monitors the circuit temperature to see if it reaches a specific level. If the temperature exceeds this level, the driver IC will shut down the corresponding half-region, putting all its segments into a RESET state. Pixel and power supply diagnostic functions have been added to ensure the quality of the displayed image.

Embodiments of the present disclosure generally relate to liquid interface 3D printing methods and devices. The device includes a backplane, the backplane having a backplane surface, the backplane surface including a plurality of LEDs, sub-pixel isolation (SI) structures disposed over the backplane surface and between the plurality of LEDs, the SI structures defining a plurality of wells, the plurality of wells having a transparent material disposed in the plurality of wells, a stage, the stage disposed over the plurality of wells, a resin well, the resin well disposed over the stage, and a plurality of resin channels, the plurality of resin channels coupled to the resin well, the resin channels extending through the backplane, the wells and the stage.

The invention relates to a method for manufacturing an arrangement comprising the following steps: providing a plurality of optoelectronic components, in particular microLEDs, arranged on a substrate, wherein each optoelectronic component of the plurality of optoelectronic components comprises a contact area that is electrically connected to a contact line on the substrate. A dielectric material is arranged on the substrate and the plurality of optoelectronic components such that the dielectric material forms a surface with a plurality of continuous projections, each projection being located above one of the respective optoelectronic components.The dielectric material of the protrusions is partially removed to expose edge regions of the multiple optoelectronic components, and a conductive transparent layer is applied to the exposed edge regions and the dielectric material on the substrate to establish electrical contact with each of the multiple optoelectronic components.

A connector assembly for a fiber-optic bundle may provide for a ninety degree bend in the fiber-optic bundle. The connector assembly may be used in a microLED-based optical interconnect. The microLED-based optical interconnect may provide for data and / or clock communication from an array of microLEDs to an array of photodetectors, with a fiber-optic bundle providing an optical transmission medium coupling light between the microLEDs and the photodetectors. Fiber elements of the fiber-optic bundle may be bound together about ends of the fiber elements, but loose in an area of the bend.