128 results about "MicroLED" patented technology

The present disclosure provides an automated die bonding of LED substrates system in which an automated die bonding inspection module is used to determine the quality of incoming processing material and an automated die bonding process module is used to process the processing material, an automated die bonding post-process module is used to inspect the resultant process material for acceptability, and an automated die bonding historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated die bonding process module and an automated die bonding integration module to update the automated die bonding process module based upon the results of the automated die bonding historical module.

The invention discloses a device and a method for testing a MicroLED wafer array. The device comprises a wafer slide holder, a MicroLED test device and a photometric integrating sphere, a MicroLED wafer is arranged on the wafer slide holder; the MicroLED wafer is provided with a MicroLED wafer array, and the MicroLED wafer array is provided with a plurality of The MicroLED wafer array is composed of a plurality of MicroLEDs which are distributed in an array form; the MicroLED test equipment comprises a flexible electrode and a TFT (Thin Film Transistor) addressing circuit; the wafer slide holder is used for enabling a MicroLED wafer to be aligned with the MicroLED test equipment so as to enable the MicroLED to be lightened, and visible light emitted after the MicroLED is lightened is transmitted to the photometric integrating sphere through the MicroLED test equipment; the photometric integrating sphere is used for testing optical parameters of the MicroLED; the optical parameters comprise optical power and wavelength; and the TFT addressing circuit is used for providing current, voltage and position parameters of the MicroLED. According to the device and the method, the optical parameters and the position of each MicroLED in the MicroLED wafer array can be rapidly tested in a lossless and high-throughput manner.

The present disclosure provides an automated repair of LED substrates system in which an automated repair inspection module is used to determine the quality of incoming processing material an automated repair process module is used to process the processing material, an automated repair post-process module is used to inspect the resultant process material for acceptability, and an automated repair historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated repair process module, and an automated repair integration module to update the automated repair process module based upon the results of the automated repair historical module.

A light-emitting apparatus includes a carrier substrate, an array of light-emitting devices on the carrier substrate, and carrier posts connecting the light-emitting devices to the carrier substrate spaced apart from the carrier substrate. The carrier post forms the only attachment between each light-emitting device and the carrier substrate, is positioned within the areal extent of the light-emitting device, and is attached to the light-emitting device at an attachment area thereof that occupies only a fractional portion of the areal extent of the light-emitting device. A transfer substrate can adhere to the light-emitting devices and then be separated from the carrier substrate with the light-emitting devices adhered thereto. The light-emitting devices can then be attached to a backplane, interconnect layer, or circuit board and the transfer layer removed leaving the behind the attached light emitting devices.

Processors may interface with memory using microLED-based optical connections. MicroLEDs and photodetectors of the optical connections may be packaged outside of a package for the processor, packaged with a processor, or may be bonded to a surface of the processor. The optical connections may make use of interface chiplets. Some of the interface chiplets may include memory controller circuitry.

A method of forming a micro light-emitting diode (microLED) array may include forming pixel isolation structures on a sacrificial substrate, and mounting the microLEDs on a separate backplane. The processes that forms the pixel isolation structures, and which may damage the backplane or microLEDs can be separately performed on the sacrificial substrate. The pixel isolation structures can then be attached to the backplane and the sacrificial substrate can be removed. This allows the formation of the pixel isolation structures to be isolated, the microLEDs to be tested early in the process, and the interface between the microLEDs and subsequent layers to be free of adhesive.

Provided is an LED comprised of a single mesa epitaxial stack structure with a set of three p-n junctions and having four electrical contact terminals. A polychromatic, multi / full-color emitting, LED chip is assembled with a backplane and has four electrical contact terminals. The polychromatic LED is transferrable and able to be integrated each individually or as a mass array.

A chip package assembly is disclosed that includes an integrated circuit chip and an optical interconnect system. The optical interconnect system has a first optical transmitter having a plurality of first microLEDs and a first optical receiver having a plurality of light sensors. The first optical transmitter and first optical receiver communicate with a respective second external optical receiver and second external optical transmitter of one or more external chip package assemblies. The external optical transmitter transmits an unmodulated optical light signal to the light sensor indicating whether first microLEDs of the external optical transmitter are in the first “on” state or the first “off” state. The light sensors convert the received and second corresponding unmodulated optical light signal to an electrical signal.

Integrated circuit chips may be optically interconnected using microLEDs. Some interconnections may be vertically-launched parallel optical links. Some interconnections may be planar-launched parallel optical links.

A method and system for photopolymerization 3D printing is provided. The system includes a processing device, a micro light emitting diode (microLED) array including one or more individually addressable microLED emitters, and a printing component. The processing device is configured to determine one or more printing layers of an object. The microLED array is configured to generate light for each of the one or more printing layers. The printing component is configured to print the one or more printing layers. To generate the light for each of the one or more printing layers, the processing device is further configured to dynamically determine one or more microLED regions in the microLED array, determine one or more region printing parameters for each of the one or more microLED regions; and determine one or more control signals for the one or more individually addressable microLED emitters included in each of the one or more microLED regions based on the one or more region printing parameters.

A micro-light-emitting diode (microLED) display panel includes microLEDs disposed on a display area, which is divided into a plurality of blocks; drivers respectively disposed on the blocks; and probe pads disposed within each block, the probe pads being electrically connected to corresponding microLEDs via corresponding electric wires. The probe pads and the electric wires of a corresponding block are disposed locally and confined to the corresponding block, and are not connected elsewhere beyond the corresponding block.

An HEMT driving and MicroLED integrated back plate and a manufacturing method therefor, relating to the field of MicroLED. The manufacturing method comprises the steps: growing an HEMT epitaxial structure on a substrate; successively growing three monochromatic LED epitaxial structures on the HEMT epitaxial structure to obtain an epitaxial wafer; etching to the substrate for partitioning of the epitaxial wafer; and depositing a passivation layer, etching a through hole, and then depositing a conductor, so that n-GaN layers of three LED regions are connected and connected to one HEMT region, and the remaining three HEMT regions are respectively connected to a p-GaN layer of one LED region. An HEMT and a three-color LED device are integrated on a single substrate at an epitaxial end, so that the effect of parasitic parameters caused by complex packaging and bonding processes can be avoided, and tedious mass transfer and detection procedures after mass transfer can be skipped.

The invention generally relates to a catheter sterilization system using semiconductor light emitting devices (LEDs) to sterilize the lumen of a catheter. The sterilization system may include a sterilization head with attached semiconductor LEDs sized for insertion into the catheter. The sterilization head is connected to the linearly extending connector allowing an operator to move the sterilization head through the catheter. The sterilization system may alternatively include microLEDs attached to the inner sidewalls of the catheter to sterilize the lumen of the catheter.

Systems and methods herein relate to forming optical devices using silicon wafers, glass, or devices such as substrates, the optical devices comprising stacked layers of optical elements. The optical elements discussed herein may be fabricated on temporary or permanent substrates. In some examples, the optical devices are fabricated to include transparent substrates or devices including charge coupled devices (CCDs), or complementary metal oxide semiconductor (CMOS) image sensors, light emitting diodes (LEDs), micro LED (μLED) displays, organic light emitting diodes (OLEDs), or vertical cavity surface emitting lasers (VCSELs). The optical elements may be sandwiched between the optical element layers, and the thickness of the sandwich may range from 1 nm to 3 mm.

The present disclosure provides an automated film measurement of microLED substrates system in which an automated film measurement inspection module is used to determine the quality of incoming processing material, and an automated film measurement process module is used to process the processing material, an automated film measurement post-process module is used to inspect the resultant process material for acceptability, and an automated film measurement historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated film measurement process module and an automated film measurement integration module to update the automated film measurement process module based upon the results of the automated film measurement historical module.

A micro-light-emitting diode (microLED) display panel includes a plurality of microLEDs arranged in rows and columns. Anodes of microLEDs in a same row are connected to a corresponding data line, and cathodes of pixels in a same column are connected to a corresponding group of common lines, each of which is connected to cathodes of microLEDs of different colors.

The present invention discloses various aspects of device architecture, optoelectronic systems and methods of developing color microdisplay. In particular, the usage of walls in pixel subarrays is disclosed to prevent leakage of light wherein one sub-array can be covered by color conversion layers to convert the light from the sub-array to a different color. Further, usage of microLEDs with continuous pixelation and common electrode in different combinations is also disclosed.

An augmented reality (AR) display includes a light engine having a three-color microscopic light-emitting diode (microLED) panel and an array of microlenses disposed at the three-color microLED panel and configured to redirect collimated projected light from the three-color microLED panel to an exit pupil of the light engine. A microlens of the array of the microlenses partially covers a pixel of the three-color microLED panel so that a red pixel of the three-color microLED panel is substantially aligned with an optical axis of each microlens and a blue pixel and a green pixel are substantially offset from the microlens. A waveguide of the AR display includes an input coupler (IC) with an entrance pupil that is substantially coplanar with the light engine.

Optical chip-to-chip interconnects may use microLEDs as light sources. The interconnected chips may be on a same substrate. A pair of endpoint chips may each have associated optical transceiver subsystems, with transceiver circuitry in transceiver chips. Optical communications may be provided between the optical transceiver subsystems, with the optical transceiver subsystems in communication with their associated endpoint chips by way of metal layers in the substrate.

Particular embodiments described herein provide for an electronic device that can be configured to include a display. The display can include a liquid crystal array and a backplane. The backplane generates a backlight created by a plurality of microLEDs and each microLED is comprised of a plurality of nano-pyramid LEDs, where each nano-pyramid has a receiving pad coupling layer that is coupled to the receiving pad on the backplane. The backplane can include a plurality of blue microLEDs, a plurality of green microLEDs, and a plurality of red microLEDs

Embodiments of a display device are described. A display device includes a substrate (204) and a sub-pixel (R1, R2) configured to emit a display light having an emission spectrum with a first peak wavelength and a second peak wavelength. The sub-pixel includes a microLED (218) disposed on the substrate and a NS-based CC layer (220) disposed on the microLED. The NS-based CC layer includes QDs configured to emit a first light having the first peak wavelength. The microLED is configured to emit a second light having the second peak wavelength. A first portion of the second light is absorbed by the QDs and down-converted to the first light and a second portion of the second light is transmitted through the NS-based CC layer (220).

The present disclosure provides an automated electroluminescence testing equipment of LED substrates system in which an automated electroluminescence testing equipment inspection module is used to determine quality of incoming processing material, and an automated electroluminescence testing equipment process module is used to process the processing material, an automated electroluminescence testing equipment post-process module is used to inspect the resultant process material for acceptability, and an automated electroluminescence testing equipment historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated electroluminescence testing equipment process module, and an automated electroluminescence testing equipment integration module to update the automated electroluminescence testing equipment process module based upon the results of the automated electroluminescence testing equipment historical module.

The invention relates to the technical field of MicroLED display, and particularly discloses a nanocrystalline color conversion layer for a MicroLED and a preparation method of the nanocrystalline color conversion layer. A nanocrystalline color conversion layer is formed at a low temperature of 150-400 DEG C by co-evaporating a perovskite precursor and an organic matrix material containing a P = O / S = O / C = O group. A magnetic metal mask is adopted, the distance between the mask and a substrate is controlled to be smaller than or equal to 0.5 mm, and a high-resolution patterned nanocrystalline color conversion layer is achieved. The dynamic vacuum degree of 5 * 10 <-4 > to 5 * 10 <-5 > Pa is maintained in the evaporation process, the deposition rate is 0.01-5 nm / s, the thickness of the obtained color conversion layer is 500-3000 nm, and the interface roughness Ra is smaller than 10 nm. The optical property of the nanocrystal is improved in situ through the matrix material, so that the fluorescence quantum yield reaches 85% or above, and the color gamut is gt; a 120% NTSC; mask design and process parameters are optimized, blockage is avoided, and pattern precision is improved; the full-dry process is compatible with mass production, and the yield is greater than 95%. The color conversion layer solves the problems of efficiency and stability in MicroLED full-color conversion.

In package intra-chip and / or inter-chip optical communications are provided using microLEDs and photodetectors mounted to integrated circuit (IC) chips and / or to transceiver dies associated with the IC chips. Light from the LEDs may pass through waveguides on or in a substrate to which the IC chips are mounted or which couple the IC chips.

Aspects of the disclosure include display units having shaped micro reflectors with integrated side-fire micro light-emitting diodes (micro LEDs) which can be stand-alone or laminated into glass or laminated glass assemblies (e.g., a glass panel of a vehicle). An exemplary display unit includes a side-fire micro light-emitting diode on a surface of a display substrate. The side-fire micro light-emitting diode is coated with a first reflective layer such that light is emitted from an uncoated sidewall. The display unit includes a shaped micro reflector coated with a second reflective layer on the display substrate. The shaped micro reflector includes a tapered sidewall positioned to redirect, via reflection against the second reflective layer, light from the uncoated sidewall of the side-fire micro light-emitting diode from an emitted angle to a reflection angle. The second reflective layer is formed directly on opposite sidewalls and a bottommost surface of the shaped micro reflector.

A new design for a near-UV emitting quantum well structure exhibits a small electron-hole wavefunction overlap. The small electron-hole overlap is beneficial for near UV-microLEDs because small overlap results in a high carrier density even at low current densities. Due to the higher carrier density, non-radiative recombination centers are saturated at relatively low current density in the newly disclosed design. The new design is therefore more robust against non-recombination losses at both intrinsic and surface defects, and capable of higher efficiency than conventional designs at low current densities.

The invention relates to an optoelectronic arrangement for optical data communication, comprising a plurality of optoelectronic components, in particular microLEDs, each having a main emission area that can be attached to one or more optical fibers; wherein the plurality of optoelectronic components each comprise a semiconductor layer stack with an active area configured to emit light of a first wavelength. A light source is configured to emit excitation light of a second wavelength, the second wavelength being shorter than the first wavelength and arranged to illuminate the active areas and thereby generate photoluminescent light.The optoelectronic arrangement is configured to modulate the generation of photoluminescent light by individually supplying a particularly inverted voltage and / or current signal to the semiconductor layer stack of the multitude of optoelectronic components.

A light-emitting apparatus includes a carrier substrate, an array of lightemitting devices on the carrier substrate, and carrier posts connecting the lightemitting devices to the carrier substrate spaced apart from the carrier substrate. The carrier post forms the only attachment between each light-5 emitting device and the carrier substrate, is positioned within the areal extent of the light-emitting device, and is attached to the light-emitting device at an attachment area thereof that occupies only a fractional portion of the areal extent of the light-emitting device. A transfer substrate can adhere to the light-emitting devices and then be separated 10 from the carrier substrate with the light-emitting devices adhered thereto. The lightemitting devices can then be attached to a backplane, interconnect layer, or circuit board and the transfer layer removed leaving the behind the attached light emitting devices.

A connector assembly for a fiber-optic bundle may provide for a ninety degree bend in the fiber-optic bundle. The connector assembly may be used in a microLED-based optical interconnect. The microLED-based optical interconnect may provide for data and / or clock communication from an array of microLEDs to an array of photodetectors, with a fiber-optic bundle providing an optical transmission medium coupling light between the microLEDs and the photodetectors. Fiber elements of the fiber-optic bundle may be bound together about ends of the fiber elements, but loose in an area of the bend.

A chip package assembly is disclosed that includes an integrated circuit chip and an optical interconnect system. The optical interconnect system has a first optical transmitter having a plurality of first microLEDs and a first optical receiver having a plurality of light sensors. The first optical transmitter and first optical receiver communicate with a respective second external optical receiver and second external optical transmitter of one or more external chip package assemblies. The external optical transmitter transmits an unmodulated optical light signal to the light sensor indicating whether first microLEDs of the external optical transmitter are in the first "on" state or the first "off' state. The light sensors convert the received and second corresponding unmodulated optical light signal to an electrical signal.