46 results about "MicroLED" patented technology

The present disclosure provides an automated die bonding of LED substrates system in which an automated die bonding inspection module is used to determine the quality of incoming processing material and an automated die bonding process module is used to process the processing material, an automated die bonding post-process module is used to inspect the resultant process material for acceptability, and an automated die bonding historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated die bonding process module and an automated die bonding integration module to update the automated die bonding process module based upon the results of the automated die bonding historical module.

The invention discloses a device and a method for testing a MicroLED wafer array. The device comprises a wafer slide holder, a MicroLED test device and a photometric integrating sphere, a MicroLED wafer is arranged on the wafer slide holder; the MicroLED wafer is provided with a MicroLED wafer array, and the MicroLED wafer array is provided with a plurality of The MicroLED wafer array is composed of a plurality of MicroLEDs which are distributed in an array form; the MicroLED test equipment comprises a flexible electrode and a TFT (Thin Film Transistor) addressing circuit; the wafer slide holder is used for enabling a MicroLED wafer to be aligned with the MicroLED test equipment so as to enable the MicroLED to be lightened, and visible light emitted after the MicroLED is lightened is transmitted to the photometric integrating sphere through the MicroLED test equipment; the photometric integrating sphere is used for testing optical parameters of the MicroLED; the optical parameters comprise optical power and wavelength; and the TFT addressing circuit is used for providing current, voltage and position parameters of the MicroLED. According to the device and the method, the optical parameters and the position of each MicroLED in the MicroLED wafer array can be rapidly tested in a lossless and high-throughput manner.

The present disclosure provides an automated repair of LED substrates system in which an automated repair inspection module is used to determine the quality of incoming processing material an automated repair process module is used to process the processing material, an automated repair post-process module is used to inspect the resultant process material for acceptability, and an automated repair historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated repair process module, and an automated repair integration module to update the automated repair process module based upon the results of the automated repair historical module.

The present disclosure provides an automated film measurement of microLED substrates system in which an automated film measurement inspection module is used to determine the quality of incoming processing material, and an automated film measurement process module is used to process the processing material, an automated film measurement post-process module is used to inspect the resultant process material for acceptability, and an automated film measurement historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated film measurement process module and an automated film measurement integration module to update the automated film measurement process module based upon the results of the automated film measurement historical module.

A micro-light-emitting diode (microLED) display panel includes a plurality of microLEDs arranged in rows and columns. Anodes of microLEDs in a same row are connected to a corresponding data line, and cathodes of pixels in a same column are connected to a corresponding group of common lines, each of which is connected to cathodes of microLEDs of different colors.

The present disclosure provides an automated electroluminescence testing equipment of LED substrates system in which an automated electroluminescence testing equipment inspection module is used to determine quality of incoming processing material, and an automated electroluminescence testing equipment process module is used to process the processing material, an automated electroluminescence testing equipment post-process module is used to inspect the resultant process material for acceptability, and an automated electroluminescence testing equipment historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated electroluminescence testing equipment process module, and an automated electroluminescence testing equipment integration module to update the automated electroluminescence testing equipment process module based upon the results of the automated electroluminescence testing equipment historical module.

The invention relates to the technical field of MicroLED display, and particularly discloses a nanocrystalline color conversion layer for a MicroLED and a preparation method of the nanocrystalline color conversion layer. A nanocrystalline color conversion layer is formed at a low temperature of 150-400 DEG C by co-evaporating a perovskite precursor and an organic matrix material containing a P = O / S = O / C = O group. A magnetic metal mask is adopted, the distance between the mask and a substrate is controlled to be smaller than or equal to 0.5 mm, and a high-resolution patterned nanocrystalline color conversion layer is achieved. The dynamic vacuum degree of 5 * 10 <-4 > to 5 * 10 <-5 > Pa is maintained in the evaporation process, the deposition rate is 0.01-5 nm / s, the thickness of the obtained color conversion layer is 500-3000 nm, and the interface roughness Ra is smaller than 10 nm. The optical property of the nanocrystal is improved in situ through the matrix material, so that the fluorescence quantum yield reaches 85% or above, and the color gamut is gt; a 120% NTSC; mask design and process parameters are optimized, blockage is avoided, and pattern precision is improved; the full-dry process is compatible with mass production, and the yield is greater than 95%. The color conversion layer solves the problems of efficiency and stability in MicroLED full-color conversion.

A new design for a near-UV emitting quantum well structure exhibits a small electron-hole wavefunction overlap. The small electron-hole overlap is beneficial for near UV-microLEDs because small overlap results in a high carrier density even at low current densities. Due to the higher carrier density, non-radiative recombination centers are saturated at relatively low current density in the newly disclosed design. The new design is therefore more robust against non-recombination losses at both intrinsic and surface defects, and capable of higher efficiency than conventional designs at low current densities.

The invention relates to an optoelectronic arrangement for optical data communication, comprising a plurality of optoelectronic components, in particular microLEDs, each having a main emission area that can be attached to one or more optical fibers; wherein the plurality of optoelectronic components each comprise a semiconductor layer stack with an active area configured to emit light of a first wavelength. A light source is configured to emit excitation light of a second wavelength, the second wavelength being shorter than the first wavelength and arranged to illuminate the active areas and thereby generate photoluminescent light.The optoelectronic arrangement is configured to modulate the generation of photoluminescent light by individually supplying a particularly inverted voltage and / or current signal to the semiconductor layer stack of the multitude of optoelectronic components.

The present invention discloses methods to reduce a surface reflection and improve a contrast in an optoelectronic system with microdevices that may comprise of microLED's, microsensors, MEMS, or another type of semiconductor or optoelectronic device. In particular, there is use of black matrix, pixel circuit layers, reflective layers, optical structures, photo definable polymer and dielectrics. Here the optical structure may comprise wavelength tuning materials.

This invention relates to the field of optical signal demodulation, specifically to a parallel optical signal modulation and demodulation method and system based on MicroLED array optical interconnects, comprising: a data acquisition module for acquiring raw data from the external environment or equipment and converting it into a form suitable for subsequent processing; a data processing module for receiving information from the data acquisition module and preprocessing it; and a data analysis module. The overall architecture of high-speed DSP+MicroLED channels breaks away from the traditional approach of "hundreds of channels, DSP-free, wide but slow." By introducing SerDes and DSP modulation and demodulation, the single-channel rate is increased by an order of magnitude, achieving a total bandwidth of ≥120Gbps with ≤32 channels. Simultaneously, single-channel 10–20Gbps OOK / PAM4 modulation is achieved: clearly defining high-order modulation of MicroLED under GHz-level bandwidth conditions, overcoming the carrier lifetime limitations of MicroLED, and ensuring low bit error rate through pre-emphasis, equalization, and FEC.

This invention discloses a data processing method and system for adaptive MicroLED array capabilities. The method is applied at the transmitting end and includes: acquiring target transmission data; allocating the target transmission data according to a predetermined transmission rate corresponding to each MicroLED channel to obtain channel transmission data corresponding to each MicroLED channel; encoding the corresponding channel transmission data based on a predetermined repetition factor corresponding to each MicroLED channel to obtain encoded transmission data; driving the MicroLEDs of each channel to emit light according to the encoded transmission data, so that the receiving end can convert the received optical signal into an electrical signal and extract electrical data; decoding the received electrical data based on the repetition factor to obtain the corresponding channel transmission data; and merging the data from each channel transmission data to obtain the target transmission data.

The present disclosure relates to integration of microdriver arrays in microdevice array structures enabling higher performance with multi-functionality capability. The present invention further discloses microLED and microsensor embedded display systems and interfaces, which are primarily visual output devices with limited interactive capabilities. Here invention a Multifunctional Display Hub integrates microLEDs and various microsensors within a single substrate.

In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension of less than 5 μm along a horizontal direction of the micro-LED and a contact formed on a non-horizontal surface of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs) and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that the micro-LED has a current density of 50 A / cm. 2 The contact is configured to inject holes through the p-type semiconductor layer into the multiple QWs when driven with an effective current density of less than 1 μm. The injected holes diffuse laterally in the multiple QWs over a distance greater than 1 micrometer (μm).

This invention discloses a MicroLED microdisplay chip with integrated multiple interfaces and over-temperature control, relating to the field of display chip technology. The chip includes the following steps: Step 1: The MicroLED microdisplay chip includes a CMOS driving circuit and provides multiple interfaces; Step 2: The light-emitting layer of the MicroLED chip uses a sapphire or silicon substrate and includes a grown GaN layer; Step 3: The MicroLED driver is a silicon-based CMOS driving circuit; Step 4: The CMOS driving circuit can provide current input; Step 5: The MicroLED display chip includes a temperature sensor. The driving current for a single pixel is set to 150uA. ～ With a standard current of 1.95mA and a current of 2.35mA, the brightness of MicroLEDs is significantly improved. A temperature monitoring circuit was designed to prevent damage to the driver IC. The over-temperature detection function continuously monitors the circuit temperature to see if it reaches a specific level. If the temperature exceeds this level, the driver IC will shut down the corresponding half-region, putting all its segments into a RESET state. Pixel and power supply diagnostic functions have been added to ensure the quality of the displayed image.

Embodiments of the present disclosure generally relate to liquid interface 3D printing methods and devices. The device includes a backplane, the backplane having a backplane surface, the backplane surface including a plurality of LEDs, sub-pixel isolation (SI) structures disposed over the backplane surface and between the plurality of LEDs, the SI structures defining a plurality of wells, the plurality of wells having a transparent material disposed in the plurality of wells, a stage, the stage disposed over the plurality of wells, a resin well, the resin well disposed over the stage, and a plurality of resin channels, the plurality of resin channels coupled to the resin well, the resin channels extending through the backplane, the wells and the stage.

The invention relates to a method for manufacturing an arrangement comprising the following steps: providing a plurality of optoelectronic components, in particular microLEDs, arranged on a substrate, wherein each optoelectronic component of the plurality of optoelectronic components comprises a contact area that is electrically connected to a contact line on the substrate. A dielectric material is arranged on the substrate and the plurality of optoelectronic components such that the dielectric material forms a surface with a plurality of continuous projections, each projection being located above one of the respective optoelectronic components.The dielectric material of the protrusions is partially removed to expose edge regions of the multiple optoelectronic components, and a conductive transparent layer is applied to the exposed edge regions and the dielectric material on the substrate to establish electrical contact with each of the multiple optoelectronic components.

The invention relates to a micro-LED comprising a semiconductor layer stack with a first layer of a first doping type, a second layer of a second doping type, and an active region arranged between the first and second layers. The semiconductor layer stack comprises a bottom and a top surface, as well as mesa-structured side surfaces connecting the top and bottom surfaces, and a central region with a lateral dimension that is less than half a lateral dimension of the semiconductor layer stack. Furthermore, the semiconductor layer stack comprises a material comprising at least one phosphide and one arsenide, and a current path from the first layer to the second layer through the active region is confined to the central region.

A foldable micro-light-emitting diode (microLED) display includes a flexible supporting film, a plurality of drivers and a plurality of display panels attached to the supporting film. Each display panel includes a plurality of blocks each having a plurality of microLEDs controlled by a corresponding driver.

An optical system is configured for an imaging system comprising a partially occupied microLED array comprising occupied and unoccupied array positions that cause lost image detail. The optical system comprises at least one optical device, wherein each optical device is associated with and positioned relative to a grouping of microLEDs of the partially occupied microLED array. Each optical device comprises at least one transparent plate member configured to refract a light beam from the grouping of microLEDs in the array onto an image plane. Each optical device is positionable so as to cause the at least one transparent plate member to sequentially refract the light beam along more than one light path. The more than one light path corresponds to both occupied and unoccupied array positions, thereby recovering lost image detail.

An optical interconnect may include an array of microLEDs driven to generate light based on data and / or clock signals, an array of photodetectors to receive the light and generate electrical signals corresponding to the data and / or clock signals, and optical fibers providing at least part of a pathway between the microLEDs and the photodetectors. A reflector structure for each of the microLEDs assists in coupling light from the microLEDs into the optical fibers. The reflector structure may be in the form of a compound parabolic concentrator (CPC).

Devices and methods for analyzing polymer arrays formed on integrated surfaces of microLEDs. One microarray includes a plurality of individually controllable microLED elements, a plurality of photodetector elements, an integrated surface, and a CMOS driver chip. Each microLED element is paired with a photodetector element. The CMOS driver chip controls activation of the microLED elements and the photodetector elements.

The present disclosure provides an automated wafer bonding of LED substrates system in which an automated wafer bonding inspection module is used to determine the quality of incoming processing material and an automated wafer bonding process module is used to process the processing material, an automated wafer bonding post-process module is used to inspect the resultant process material for acceptability, and an automated wafer bonding historical module is used to analyze the post process results of the most recent process, against all historical data to find enhanced process changes in the automated wafer bonding process module and an automated wafer bonding integration module to update the automated wafer bonding process module based upon the results of the automated wafer bonding historical module.

The invention relates to a micro-LED comprising a semiconductor layer stack with a first charge transport layer of a first doping type, a second charge transport layer of a second doping type, and an active region arranged between the first and second charge transport layers. The semiconductor layer stack comprises a top surface and side surfaces adjacent to the top surface, the side surfaces being inclined with respect to a normal of the top surface. The semiconductor layer stack is further based on an aluminum-gallium-indium-phosphide system. The micro-LED additionally comprises a growth layer covering the side surfaces, a first contact element arranged on the first charge transport layer, and a second contact element electrically contacting the second charge transport layer.The peripheral areas of the active region, bordering the side surfaces, are contaminated with at least one of the following elements: oxygen, iron, silicon, magnesium, sulfur, tellurium, beryllium and boron.

Provided is a monolithic active matrix pixel with a polychromatic RGB micro-LED and field effect transistors (FET) on the same epitaxial wafer. The field effect transistors are gallium nitride (GaN)-based. The polychromatic RGB micro-LED is formed on a transistor channel layer on the epitaxial wafer. The polychromatic RGB micro-LED has four electrode terminals, one of which is a common anode or a common cathode.

A microLED includes: two or more light-emitting mesa arranged vertically from top to bottom; and at least one distributed Bragg reflection (DBR) layer formed between adjacent light-emitting mesa and configured to reflect light emitted from a light-emitting mesa disposed above the DBR layer and to allow light emitted from one or more light-emitting mesa disposed below the DBR layer to pass through.

The invention discloses a micro light-emitting diode display memory driving array, a preparation method thereof and a display, and relates to the technical field of display driving. Comprising a supporting substrate, a gating transistor, a floating gate storage transistor and a Micro-LED, the gating transistor and the floating gate storage transistor are used as driving units of the array, and the Micro-LED is used as a light-emitting unit of the array; the light-emitting units and the corresponding driving units are directly stacked and integrated in the vertical direction. The storage charge quantity is modulated by accurately controlling the grid voltage, accurate pulse width modulation of the light emitting time of each micro light emitting diode is achieved, and the excellent holding capacity of the driving current in the frame period is ensured. The mechanism fundamentally ensures the high-brightness output consistency, fine gray control and long-term working stability of the display unit, and perfectly meets the strict requirements of high-end display on image quality and reliability.

The utility model discloses a quartz negative pressure adsorption device, relates to the negative pressure adsorption field, including desktop and adjustable quartz negative pressure adsorption unit on the desktop, the both sides of desktop top end face are embedded and install the fixed seat, the top end of fixed seat is inserted with the lifting rod in the sliding way, and the fixed seat is inserted with the lifting rod. Transverse rods are fixed to the two ends of the lifting rod, a driving mechanism is embedded in the lifting rod, sliding rods inserted into the transverse rods are symmetrically fixed to the two ends of the quartz negative pressure adsorption unit, and a negative pressure cavity is formed in the center of the quartz negative pressure adsorption unit; wherein a plurality of negative pressure adsorption holes are formed in the bottom end of the quartz negative pressure adsorption unit. According to the utility model, the sapphire lining plate and a plurality of MicroLED chips can be conveniently adsorbed, the mass production process of MicroLEDs is improved, the position and height of the quartz negative pressure adsorption unit can be conveniently adjusted, and the movement convenience of the quartz negative pressure adsorption unit is improved.

A display system includes a display panel divided into a plurality of display blocks arranged in rows and columns, each display block including a plurality of micro-light-emitting diodes (microLEDs) driven by a corresponding driver disposed in a corresponding display block; a power management unit (PMU) that dynamically provides different power-supply voltages for the drivers respectively during a line scan period or a frame scan period; and a timing controller that determines the different power-supply voltages for the PMU according to content of data to be display on the display panel.

A new design for a near-UV emitting quantum well structure exhibits a small electron-hole wavefunction overlap. The small electron-hole overlap is beneficial for near UV-microLEDs because small overlap results in a high carrier density even at low current densities. Due to the higher carrier density, non-radiative recombination centers are saturated at relatively low current density in the newly disclosed design. The new design is therefore more robust against non-recombination losses at both intrinsic and surface defects, and capable of higher efficiency than conventional designs at low current densities.