The present invention relates to a semiconductor device and a manufacturing method thereof. When a contact hole of a semiconductor layer and a source and drain electrode, a through-hole of a positive electrode and the source and drain electrode, a through-hole between connecting metal lines or a contact hole of the through-holes, are formed, at least one type of dry-process corrosion of high corrosion rate and high selectivity is used for dry-process corrosion; wet-process corrosion is adopted in the final corrosion treatment, so as to form the contact holes, the through-holes or the contact holes of the through-holes, which are provided with various conical angles and a plurality of contours; residues that are produced by corrosion can be completely eliminated in the wet-process and dry-process treatment; therefore, the contact holes, the through-holes or the contact holes of the through-holes have excellent contact characteristics. The semiconductor device comprises a substrate, a film transistor that is formed on the substrate and is provided with a semiconductor layer, a grid insulation layer, a grid electrode and a interlayer dielectric, and contact holes that penetrates the grid insulation layer and the interlayer dielectric, is exposed on the surface of the semiconductor layer and is provided with a plurality of contours. The upper part of the contact holes is provided with a contour for the wet-process corrosion; and the lower part has at least one of the contours for the wet-process corrosion and the dry-process corrosion.