2results about How to "Improved contact characteristics" patented technology

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The utility model discloses a superpower photovoltaic TMBS chip layered structure, which comprises a lining plate and an epitaxial layer, the epitaxial layer is arranged on the top of the lining plate, a Schottky barrier layer is arranged on the top of the epitaxial layer, the Schottky barrier layer comprises a Schottky contact layer, the Schottky contact layer is arranged on the top of the epitaxial layer, and the Schottky contact layer is arranged on the top of the epitaxial layer. A field plate layer is arranged on the outer edge of the Schottky contact layer and located on the top of the epitaxial layer, and a protective layer is arranged on the top of the epitaxial layer and located on the outer surface of the field plate layer. According to the layered structure of the super-power photovoltaic TMBS chip, the aluminum nitride film layer is deposited on the outer layer of the device, and the passivation layer formed by silicon nitride is passivated, so that the device can conduct and dissipate heat through the aluminum nitride film layer, and can isolate the external environment through the passivation layer to prevent the influence of moisture, pollutants and mechanical damage on the performance of the device.