16results about How to "Improved contact characteristics" patented technology

The invention provides a method for measuring a wafer to be measured through a four-probe measuring instrument and a four-probe measuring system. The method comprises the steps that the wafer is placed on a testing platform; the probes of the four-probe measuring instrument are in physical contact with the surface of the wafer; irradiating the contact surface of the probe and the wafer by using laser; and applying current to two probes of the four-probe measuring instrument, and measuring the voltage drop between the other two probes. According to the invention, a semiconductor is irradiated by laser, electrons are transited to a conduction band, holes are generated, and electron-hole pairs are formed, so that the contact characteristic is improved, good ohmic contact can be formed between the probe and the surface of a silicon wafer to be measured, and the stability of silicon wafer measurement is improved.

The invention discloses a preparation method of a gallium nitride-based resonant cavity light-emitting diode and a product of the gallium nitride-based resonant cavity light-emitting diode. The method sequentially comprises the following steps: epitaxially growing a gallium nitride-based epitaxial layer on an original substrate, and preparing a plurality of curved surface structures on one surface of the gallium nitride-based epitaxial layer; sequentially depositing a current expansion layer, a curved surface reflector and a transition layer on the curved surface structure along a first direction, and preparing a regional metal substrate corresponding to the size of the transition layer on the surface of the transition layer of each curved surface structure; placing one side of the regional metal substrate on a temporary substrate, removing the original substrate, and polishing, thinning and planarizing the other surface of the gallium nitride-based epitaxial layer; depositing a plane mirror on the other surface of the gallium nitride-based epitaxial layer, and preparing an electrode; and removing the temporary substrate to obtain the single independent gallium nitride-based resonant cavity light-emitting diode. According to the invention, metal curled edges and side wall damages during obtaining of an independent device can be improved, an experimental process is optimized, and performances of light output power and the like of the device are improved.

The invention discloses a low-indium-content transparent electrode-containing semitransparent perovskite solar cell and a preparation method thereof, the transparent electrode of the existing semitransparent perovskite cell is optimally designed, and the traditional indium tin oxide transparent conductive film is completely or partially replaced in the first transparent electrode and / or the second transparent electrode; the problems that indium resources are scarce and the price is high are solved. According to the invention, the design of the transparent electrode with a single-layer, double-layer or three-layer structure is adopted, and a proper interface contact layer material is combined, so that the transparent electrode has high conductivity, low In content and excellent interface characteristics, and high efficiency, low cost and high damp-heat stability of the semitransparent perovskite cell are realized.

The invention relates to the technical field of semiconductor detection, and provides a four-probe measuring instrument, a four-probe measuring system and a method for measuring a wafer to be measured by the four-probe measuring instrument, and the four-probe measuring instrument comprises four probes which are provided with channels penetrating up and down; laser emitted by the laser emitter passes through the channel from top to bottom and irradiates the wafer to be detected; the fixing plate is provided with a hole opposite to the probe, the probe penetrates through the hole, and the fixing plate is used for fixing the probe and preventing laser outside the probe from irradiating a wafer to be detected. According to the invention, a semiconductor is irradiated by laser, electrons are transited to a conduction band, holes are generated, and electron-hole pairs are formed, so that the contact characteristic is improved, good ohmic contact can be formed between the probe and the surface of a silicon wafer to be measured, and the stability of silicon wafer measurement is improved.

The invention relates to the technical field of semiconductor detection, and provides a four-probe measuring instrument, a four-probe measuring system and a method for measuring a wafer to be measured by the four-probe measuring instrument. The upper and lower parts of the conductive plate sleeve are opened, the conductive plate probe is surrounded by the conductive plate sleeve, and a gap is formed between the conductive plate probe and the inner wall of the conductive plate sleeve; laser emitted by the laser emitter penetrates through the gap of the current-conducting plate from the upper part of the current-conducting plate sleeve, enters downwards and irradiates a wafer to be detected; and the current-conducting plate fixing plate is provided with a hole opposite to the current-conducting plate sleeve, the current-conducting plate sleeve penetrates through the current-conducting plate hole, and the current-conducting plate fixing plate is used for fixing the current-conducting plate sleeve and preventing laser outside the current-conducting plate sleeve from irradiating the wafer to be detected. Good ohmic contact can be formed between the probe and the surface of the silicon wafer to be measured, and the stability of silicon wafer measurement is improved.

The application belongs to the technical field of semiconductor manufacturing, and discloses an inert gas assisted pixel planarization etching method, which comprises the following steps: etching a ROIC wafer with a metal column and a dielectric layer by using a mixed plasma containing fluorine-containing gas and oxygen-containing gas, and stopping etching when the metal column is completely exposed or slightly exposed; after the first step of etching is completed, stop feeding the fluorine-containing gas and the oxygen-containing gas, feed inert gas, and etch the surface of the ROIC wafer by using the inert gas plasma. By separating and combining the high-selectivity chemical etching and the low-selectivity physical polishing etching function, on the basis of controlling the first etching time to prevent the formation of pits, the second inert gas physical sputtering is used for surface smoothing and metal column height fine adjustment, the high planarity of the metal column and the dielectric layer surface is realized, the ideal interface foundation is provided for subsequent electrode deposition, and the device performance and the yield are improved.

The present invention belongs to the technical field of back contact batteries, and specifically relates to a back contact battery with improved contact characteristics, a preparation method and an application thereof, wherein at least a portion of the surface layer of a transparent conductive film layer is doped with a metal material to form a doped region, and the average doping concentration of the metal material in the doped region is 1e18cm ‑3 ‑5e22cm ‑3 , the proportion of oxygen vacancies in the transparent conductive film layer to the total oxygen atoms contained is 5%-60%, and doping regions are respectively set on the transparent conductive film layers that the N-type region metal electrode and the P-type region metal electrode contact respectively. The present invention can well match semiconductors with different polarities on the back side, improve the contact characteristics between the metal electrode and the transparent conductive film layer, the transparent conductive film layer and the semiconductor layer, enhance the conductivity of the transparent conductive film layer, reduce the resistivity of the transparent conductive film layer, and reflect the effect of reducing the overall resistance from the macroscopic measurement, thereby improving the battery efficiency.

The invention discloses a preparation method of an HJT photovoltaic cell electro-coppering electrode seed layer, which adopts a CuNi target as a sputtering target material, introduces metallic nickel and controls the proportion of nickel, creatively adopts a novel CuNi seed layer film as a heterojunction cell electro-coppering seed layer, the CuNi seed layer film has good conductivity, and can be used for preparing an electro-coppering electrode seed layer. The CuNi seed layer film and the TCO film have good bonding strength, are easy to etch, do not have a corrosion expansion phenomenon, are matched with the etching rate of a copper film, have good acid resistance, have good matching degree with a copper electroplating solution, have good contact characteristics with the TCO film on the bottom layer in the electroplating solution, and are low in contact resistance; and the photoelectric conversion efficiency of the heterojunction solar cell can be effectively improved.

This application discloses a GaN-based micro-LED epitaxial structure, device, and fabrication method. The GaN-based micro-LED epitaxial structure includes, along the growth direction, a substrate, a buffer layer, an N-type doped GaN electron injection layer, an active region, and an Al2O3 layer. y Ga 1‑y The substrate consists of an N-type electron blocking layer and a P-type doped GaN hole injection layer; the substrate is selected from a (111) crystal plane single-crystal silicon substrate, a c-axis single-crystal sapphire substrate, a c-axis single-crystal silicon carbide substrate, or a c-axis self-supporting single-crystal gallium nitride substrate; the active region includes an InGaN-based light-emitting structure, which is at least one of an InGaN / GaN alternating multi-quantum-well structure, a GaN / InGaN / GaN single-quantum-well structure, and an InGaN quantum dot structure. This application shortens the carrier radiative recombination lifetime, weakens the quantum-confined Stark effect, and improves the radiative recombination rate by employing a thin quantum well or quantum dot active region structure, thereby enhancing the device's modulation bandwidth and photoelectric efficiency, meeting the performance requirements of light sources for applications such as data center optical interconnects, co-packaged optics, and high-speed visible light communication.

The invention relates to the technical field of semiconductor detection, and provides a four-probe measuring instrument, a four-probe measuring system and a method for measuring a silicon wafer to be measured by the four-probe measuring instrument. The conductive plate is provided with a hole opposite to the probe, and the probe penetrates through the hole; the voltage controller is connected to the current-conducting plate and is used for outputting stable voltage to the current-conducting plate; and the upper computer is used for sending an instruction to the voltage controller and controlling the voltage controller to work. The current-conducting plate has potential, and the carrier concentration on the surface of the semiconductor is increased under the action of an electric field, so that the contact potential barrier on the surface of the semiconductor is reduced, the contact characteristic is improved, good ohmic contact can be formed between the probe and the surface of the measured silicon wafer, and the stability of silicon wafer measurement is improved.

The utility model discloses a Hall element. The Hall element comprises a substrate and a cross-shaped functional layer arranged on the substrate. A Hall plane is formed on the top surface of the cross-shaped functional layer; the side wall of the cross-shaped functional layer is obliquely arranged and forms an included angle smaller than 90 degrees with the surface of the substrate; four end parts of the cross-shaped functional layer are respectively provided with a contact electrode, and the contact electrodes cover the top surfaces and three side walls of the end parts; wherein the edge side wall, located on the top surface, of the contact electrode is obliquely arranged, and an included angle smaller than 90 degrees is formed between the contact electrode and the top surface, so that the contact electrode better wraps a Hall plane etching step, the contact area is increased, the contact characteristic is improved, the unbalanced voltage is reduced, and the sensing capability of the device is improved.

The invention belongs to the technical field of back contact cells, and particularly relates to a back contact cell capable of improving contact characteristics and a preparation method and application thereof, at least part of the surface layer of a transparent conductive film layer is doped with a metal material to form a doped region, and the average value of the doping concentration of the metal material in the doped region is 1e18cm <-3 >-5e22cm <-3 >; the proportion of oxygen vacancies in the transparent conductive film layer accounts for 5%-60% of the total amount of oxygen atoms contained in the transparent conductive film layer, and doped regions are arranged on the transparent conductive film layers correspondingly contacted with the N-type region metal electrode and the P-type region metal electrode respectively. According to the invention, semiconductors with different polarities on the back surface can be well matched, the contact characteristics of the metal electrode and the transparent conductive film layer and the contact characteristics of the transparent conductive film layer and the semiconductor layer are improved, the conductivity of the transparent conductive film layer is enhanced, the resistivity of the transparent conductive film layer is reduced, and the effect of reducing the overall resistance is reflected from macroscopic measurement, so that the cell efficiency is improved.

A display device is provided. The display device includes: a substrate including a display area and a non-display area; an external common voltage line disposed in the non-display area; a common voltage line disposed in the display area and connected to an external common voltage line; a plurality of pixels positioned in the display area, each of the plurality of pixels including a first electrode and an emission layer; and a second electrode positioned on the plurality of pixels. The common voltage line has a multilayer structure including a first layer, a second layer, and a third layer, an undercut structure is defined in the second layer, a width of the second layer is narrower than a width of each of the first layer and the third layer, and a length of the undercut structure is greater than a height of the common voltage line.

The present invention relates to a negative electrode for an all-solid-state battery capable of providing an all-solid-state battery exhibiting excellent contact characteristics and improved lifespan characteristics between a negative electrode and a solid electrolyte, and an all-solid-state battery comprising the same.

The utility model discloses a superpower photovoltaic TMBS chip layered structure, which comprises a lining plate and an epitaxial layer, the epitaxial layer is arranged on the top of the lining plate, a Schottky barrier layer is arranged on the top of the epitaxial layer, the Schottky barrier layer comprises a Schottky contact layer, the Schottky contact layer is arranged on the top of the epitaxial layer, and the Schottky contact layer is arranged on the top of the epitaxial layer. A field plate layer is arranged on the outer edge of the Schottky contact layer and located on the top of the epitaxial layer, and a protective layer is arranged on the top of the epitaxial layer and located on the outer surface of the field plate layer. According to the layered structure of the super-power photovoltaic TMBS chip, the aluminum nitride film layer is deposited on the outer layer of the device, and the passivation layer formed by silicon nitride is passivated, so that the device can conduct and dissipate heat through the aluminum nitride film layer, and can isolate the external environment through the passivation layer to prevent the influence of moisture, pollutants and mechanical damage on the performance of the device.

The invention belongs to the technical field of semiconductor materials, and discloses a high-mobility TCO film and a preparation method thereof. The preparation method comprises the following steps: (1) depositing a bottom TCO seed layer film on a cleaned substrate by using a magnetron sputtering technology; (2) depositing a top TCO thin film on the bottom TCO seed layer thin film by using a reactive plasma deposition (RPD) technology; and (3) carrying out annealing treatment on the deposited double-layer thin film to obtain the high-mobility TCO thin film. According to the method, the seed layer is deposited in a magnetron sputtering mode, then the top TCO thin film is deposited through the RPD technology, the advantages of the seed layer and the top TCO thin film are combined through the double-layer TCO thin film technology, the defects of the two technologies are overcome, and the high-performance TCO transparent conductive thin film which is good in adhesiveness, few in defect and high in mobility can be prepared.