Plasmon-enhancement-based quantum well infrared detector and preparation method thereof

A technology of infrared detectors and quantum wells, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve problems such as low coupling efficiency, achieve enhanced sensitivity, enhanced and filtering, and reduce the impact of noise signals Effect

Inactive Publication Date: 2011-09-14
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The traditional two-dimensional grating coupling method uses the refraction and diffraction of the incident light at the grating str

Method used

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  • Plasmon-enhancement-based quantum well infrared detector and preparation method thereof
  • Plasmon-enhancement-based quantum well infrared detector and preparation method thereof
  • Plasmon-enhancement-based quantum well infrared detector and preparation method thereof

Examples

Experimental program
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Effect test

Example Embodiment

[0029] Example 1

[0030] figure 1 It is a cross-sectional view of the device structure according to Embodiment 1 of the present invention. figure 2 It is a top view of the device structure according to Embodiment 1 of the present invention. As shown in the figure, 1 is an SI-GaAs substrate with a thickness of about 0.5mm; 2 is an AlAs buffer layer with a thickness of about 200nm; 3 is an AlGaAs:Si lower contact layer with a thickness of about 1000nm; 4 is a ring-shaped lower electrode, 5 is a metal film with a thickness of about 120 nm, 6 is an upper electrode, 7 is an AlGaAs:Si upper contact layer with a thickness of about 2000 nm, 8 is a multi-quantum well layer, which is 50 cycles of AlGaAs / GaAs, that is, on the base material An AlGaAs layer of several tens of nanometers and a GaAs layer of several nanometers are grown in turn, and this cycle is repeated for 50 cycles, and 9 is a hole on the metal grating. The metal film 5 has a grating structure, the upper electrode 6...

Example Embodiment

[0041] Embodiment 2

[0042] This embodiment is similar to the first embodiment, except that Ag is selected as the material of the metal thin film, and the array of the metal grating structure is arranged in square. The square arrangement also has its advantages, its arrangement is along the x and y axes, its arrangement is equivalent in both directions, so its calculation is also equivalent.

Example Embodiment

[0043] Embodiment 3

[0044] This embodiment is similar to Embodiment 1, and the difference is only in that the material of the metal thin film is selected from Al.

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Abstract

The invention discloses a Plasmon-enhancement-based quantum well infrared detector and a preparation method thereof. The detector comprises a Si-GaAs substrate, an AlAs buffering layer, an AlAs:Si lower contact layer positioned on the buffering layer, a multi-quantum well layer, an AlAs:Si upper contact layer positioned on the multi-quantum well layer, a metal film, an upper electrode and an annular lower electrode, wherein the AlAs buffering layer is positioned on the substrate; the multi-quantum well layer is positioned on the AlAs:Si lower contact layer; the metal film and the upper electrode are positioned on the AlAs:Si upper contact layer; the metal film has a grating structure; the upper electrode is embedded in the metal grating structure; and the annular upper electrode is positioned on the lower contact layer and winds around the metal film, the upper contact layer and the multi-quantum well layer. In the detector, through the local area characteristic of Plasmon and the frequency-selecting characteristic of a raster, signals are enhanced and filtered, the absorption efficiency of a quantum well is improved, and the sensitivity of the quantum well infrared detector is increased.

Description

technical field [0001] The invention relates to the field of infrared photodetectors, in particular to a quantum well infrared detector based on Plasmon enhancement and a preparation method thereof. Background technique [0002] The quantum well infrared detector (Quantum Well Infrared Photodetector-QWIP) can artificially cut the bandgap width by changing the potential well width and barrier height, so as to realize the controllable response wavelength. And because of its mature material growth and preparation process, it is easy to integrate large area arrays, has good stability, good device uniformity, high number of operable pixels, high output, low cost, narrow spectral response bandwidth of detectors, and optical Small crosstalk, easy to realize two-color or multi-color focal plane devices, radiation resistance and most of the device technology can be compatible with HgCdTe infrared focal plane detectors, etc., in national defense detection, mineral resource detection, ...

Claims

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Application Information

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IPC IPC(8): H01L31/101H01L31/0352H01L31/18
CPCY02P70/50
Inventor 李海军刘冬杨乐臣付凯王逸群
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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