32results about How to "Increased jump chance" patented technology

The invention relates to a rare-earth oxyfiuoride nanometer material, and a preparation method and application thereof. According to the method, rare-earth trifluoroacetic acid salts and ammonium acetate are used as precursors; in addition, a high-temperature solvent thermolysis method is used, so that the oil-soluble rare-earth oxyfiuoride nanometer material is obtained. The synthesis conditions are easy to control; the repeatability is good; the prepared nanometer material is in a particle shape; the dispersibility, the uniformity and the repeatability of the particle are good. The prepared rare-earth oxyfiuoride nanometer material is an ideal substrate material capable of being applied to the field of biological detection and biological imaging.

The invention provides a supported photocatalyst and a preparation method thereof, relating to a photocatalyst and a preparation method thereof; the invention solves the problem of poor benzene removal effect of the existing photocatalyst. The supported photocatalyst is the active carbon fiber with TiO2 particles loaded on the surface. The catalyst has the preparation method that: 1. preparing solution A; 2. preparing solution B; 3. preparing and aging a titanium dioxide sol; 4. coating the titanium dioxide sol on the active carbon fiber, irradiating with microwaves, shifting to high purity nitrogen for purging, rising the temperature to 200-250 DEG C, keeping the temperature for 1-2h, heating to 350-450 DEG C, calcining at the constant temperature for 2-3h, and cooling to the room temperature. The supported photocatalyst of the invention has more than 28 percent of benzene removal efficiency under the condition of 30-70 DEG C and 1h of lighting, which is free from the influence of the benzene concentration in a gaseous environment, and can completely decompose the volatile organic compounds in an enclosed environment into non-toxic, harmless and tasteless substances after a period of time of application.

The invention discloses a Plasmon-enhancement-based quantum well infrared detector and a preparation method thereof. The detector comprises a Si-GaAs substrate, an AlAs buffering layer, an AlAs:Si lower contact layer positioned on the buffering layer, a multi-quantum well layer, an AlAs:Si upper contact layer positioned on the multi-quantum well layer, a metal film, an upper electrode and an annular lower electrode, wherein the AlAs buffering layer is positioned on the substrate; the multi-quantum well layer is positioned on the AlAs:Si lower contact layer; the metal film and the upper electrode are positioned on the AlAs:Si upper contact layer; the metal film has a grating structure; the upper electrode is embedded in the metal grating structure; and the annular upper electrode is positioned on the lower contact layer and winds around the metal film, the upper contact layer and the multi-quantum well layer. In the detector, through the local area characteristic of Plasmon and the frequency-selecting characteristic of a raster, signals are enhanced and filtered, the absorption efficiency of a quantum well is improved, and the sensitivity of the quantum well infrared detector is increased.

The invention discloses a preparation method of a resistance switch adopting TiO2/SnO2 composite nano-rods. The preparation method comprises the following steps: 1), directly growing TiO2/SnO2 composite nano-rod arrays on a conductive substrate according to a hydrothermal method; 2) annealing the conductive substrate, which is obtained in step 1) and provided with the TiO2/SnO2 composite nano-rod arrays grown thereon under 200 to 800 DEG C for 1 to 5 hours, so as to obtain the resistance switch adopting the TiO2/SnO2 composite nano-rods. The preparation method has the advantages that the indoor temperature resistance switch characteristic of the resistance switch adopting the TiO2/SnO2 composite nano-rod array structure can be better; the resistance switch effect under a low temperature can be higher; the circulating stability is favorable; the master mould of a resistance switch-type non-volatile memorizer can be prepared.

The invention belongs to the technical field of phenylfluorone compounds, and provides a 9,9'-(4,4'-biphenyl)bisfluorone bromination reagent, and a preparation method and an application thereof in order to solve the problem of unsatisfactory sensitivity and selectivity of reagents for detection of heavy metal ions in the prior art. 4,4'-Biphenyldicarboxaldehyde with a large conjugated system reacts with 1,2,4-trihydroxybenzene triacetate to synthesize the novel bisfluorone reagent with a larger conjugated system, so the sensitivity and the fluorescence characteristic of the reagent are enhanced. The 9,9'-(4,4'-biphenyl)bisfluorone bromination reagent can be used in detection of Mo (VI) ions under alkaline conditions and fluorescence detection of Mn (II). The reagent is a highly-selective and highly-selective fluorescence analysis reagent for detecting Mo (VI) and Mn (II), and is a luminosity analysis developer with a good analysis performance.

The invention discloses a preparation method of crystalline silicon containing up-conversion luminance quantum dots. The preparation method comprises the following steps: step 1. doping 8ppbw-120ppmw of rare-earth elements into solar polycrystalline silicon materials, utilizing an ordinary CZ method to prepare the monocrystalline silicon, or utilizing an ordinary ingot casting method to prepare the polycrystalline silicon, wherein the concentration of the atom quantity of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms/cm3; and step 2. carrying out annealing treatment on the monocrystalline silicon or the polycrystalline silicon prepared in the step 1 at 700-1000 DEG C, so as to obtain the monocrystalline silicon or the polycrystalline silicon containing the up-conversion luminance quantum dots. The invention also discloses the monocrystalline silicon prepared by the method, and the concentration of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms/cm3. With the adoption of the preparation method, the absorption of silicon materials to an infrared spectrum is increased, and the conversion efficiency is improved greatly.

The invention discloses a 1,2,4-riazole acceptor-based thermally activated delayed fluorescence material with the structure represented by general formula (I) and capable of realizing dark blue lights. The material is formed through connecting the para-position of 3-substituted phenyl group of a 1,2,4-triazole derivative used as an acceptor unit with an N-containing donor unit. The thermally activated delayed fluorescence material has small singlet-triplet energy level difference, can meet requirements of the thermally activated delayed fluorescence material, allows a dark blue fluorescence material to be obtained, and improves the luminous efficiency of TADF type OLED devices.

The invention discloses three-atom-doped titanium dioxide catalyst as well as a preparation method and application of the three-atom-doped titanium dioxide catalyst, belonging to the technical field of catalysis and indoor air pollution prevention and control. The three-atom-doped titanium dioxide is composed of titanium dioxide crystals comprising nitrogen atoms, vanadium atoms and silicon atoms, having a crystalline form of anatase or a mixed crystalline of anatase and rutile, and having a particle size being 2-20nm, wherein the molar ratio of nitrogen to vanadium to silicon to titanium is (14-56): (0.1-2): (3-16):100, the specific surface area is 70-90m<2>/g, the energy gap is 2.8-3.0ev, and the absorption wavelength is 380-500nm. According to the invention, based on the nitrogen-vanadium-doped titanium dioxide photocatalyst, three-atom-doped titanium dioxide photocatalyst is prepared by using a sol-gel method, the superficial area and pore volume of the product are improved, and the product has catalytic activity under visible light. The preparation method is simple, the reaction process is easy to control, and side reactions hardly occur.

The invention belongs to the technical field of phenylfluorone compounds and provides a 9,9'-(3,3'-dihydroxy-4,4'-diphenylether)bifluorone reagent and a preparation method and application thereof to solve the problem that an existing phenylfluorone compound having non-ideal sensitivity and selectivity is unable to serve as a fluorescent reagent in the fluorescent detection of metal ions.Two pyranoid ring structural units are introduced in molecules, the quantity of metal ion coordination sites is increased by one time, the ability of the reagent to coordinate with metal ions is enhanced, and the fluorescent reagent good in sensitivity and selectivity is obtained.The preparation method is simple, the cost is low, properties are stable, a detection limit in nickel determination by fluorophotometric quenching process in a basic medium in the presence of a surfactant is lower that of other reagent quenching processes, cobalt determination by spectrophotometry is higher than other fluorone reagent processes in sensitivity, and a detection limit in cobalt determination by discoloring spectrophotometry is lower than that of a process using other fluorone reagents.This reagent has high detection speed for nickel and cobalt ions and is good in selectivity, high in sensitivity and high in complex stability.

The invention discloses a fluorescent compound using pyrochlore structure metatitanic acid lanthanum as a substrate. The general formula of the fluorescent compound is La2(1-x)M2xTiO5, wherein M is Dy and/or Sm, x is greater than or equal to 0.01, and x is less than or equal to 0.02. The preparation method comprises the following steps: dissolving the soluble salt La and the soluble salt of Sm and/or Dy in the deionized water, and obtaining solution A; mixing tetrabutyl titanate and alcohol to obtain solution B; mixing the solution A and the solution B, dripping acid and stirring to obtain solution C, rising the temperature of the solution to 50-150 DEG C and keeping the temperature, and obtaining precursor gel; roasting the precursor gel, and obtaining a calcined material; and smashing, grinding, washing and drying the calcined material, and obtaining the fluorescent compound, wherein the fluorescent compound can be used for preparing the luminescent material for white light LED. The fluorescent compound has the characters of good luminescent performance, high luminescent intensity, and better color rendering. The preparation method has the characters of low calcinations temperature, simple process and low cost, and is capable of satisfying the requirement of the white light LED illumination field.

The invention provides a scandium-based rare earth luminescence material and a preparation method thereof, and aims to solve the problems that a UCNPs material is low in illumination intensity, and the illumination intensity is quenched by influence of rising temperature. The preparation method is simple, the prepared scandium-based rare earth luminescence material Sc2(WO4)3:Yb/Er has wide luminescence temperature range, luminescence temperature can reach up to 1073K, and heat quenching effects are effectively overcome. When the scandium-based rare earth luminescence material prepared by the preparation method is applied into high-temperature fake prevention, the luminescence material has excellent heat stability, luminescence of the material is enhanced along with rising of the temperature within temperature intervals of 293K-1073K, and corresponding light with determined luminescence intensity is generated in temperature spots. The application range of UCNPs is widened, so that the UCNPs can be widely applied to the fields of luminescence from indoor temperature to high temperature such as high-temperature fake prevention and fluorescence thermometers.

The invention provides a high-infrared-radiation ceramic material and a preparation method and application thereof. The high-infrared-radiation ceramic material is synthesized by a base material and an auxiliary material through high-temperature solid-phase reaction, wherein the base material comprises La2O3 and CeO2; the auxiliary material comprises one or more of Mn2O3, SrO and SrCO3. The high-infrared-radiation ceramic material comprises, by mass percentage, 45-50% of La2O3, 45-50% of CeO2 and 1-5% of auxiliary material. The high-infrared-radiation ceramic material is simple in components,good in uniformity and stable in infrared radiation performance, and the infrared radiance of the high-infrared-radiation ceramic material is not smaller than 0.95.

The invention relates to a high-temperature and high-emissivity infrared radiation coating, a preparation method and a use method thereof. The technical scheme is as follows: the CuO-doped magnesia-chromium spinel fine powder, silicified expanded graphite, Guangxi white mud, elemental silicon powder, glass powder, silica sol, glycerol and citric ammonium nitrate are mixed with a planetary ball mill to obtain high temperature and high emission. rate infrared radiation coatings. The use method of the high-temperature and high-emissivity infrared radiation coating is as follows: by brushing or spraying, the high-temperature and high-emissivity infrared radiation coating is evenly coated on the surface of the industrial furnace wall, air-dried, and dried at 110-700 °C. Heat treatment under the condition of ℃ for 1 to 4 hours to obtain a high temperature and high infrared radiation coating. The invention has the advantages of low cost, simple process and convenient spraying, and has the characteristics of high infrared radiation rate in the 1-5 μm band and long service life in industrial furnaces above 1000° C. and without air isolation.

A preparation method of double-doped rutile TiO2 nanorods belongs to the technical field of TiO2 nano polymers and comprises: dispersing titanium carbide as a raw material in water, adding ethylenediamine, dispersing for 20-30 min, adding the dispersed liquid into a reactor, allowing reaction at 170-190 DEG C for 5-6 h, taking out, cooling to 20 DEG C, centrifuging, washing, and drying to obtain the double-doped rutile TiO2 nanorods. The preparation method is simple and provides one-step synthesis of the rutile TiO2 nanorods doped with C and N.