Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon

A luminescent quantum, crystalline silicon technology, applied in semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low conversion efficiency and low light absorption utilization rate of crystalline silicon solar cells, and achieve improved conversion efficiency, The effect of improving absorption utilization and improving conversion efficiency

Active Publication Date: 2012-12-19
LONGI GREEN ENERGY TECH CO LTD
View PDF4 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Another object of the present invention is to provide a method for preparing crystalline silicon containing up-conversion luminescent quantum dots, which solves the probl

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon
  • Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0018] The method for preparing crystalline silicon containing up-conversion light-emitting quantum dots of the present invention includes the following steps:

[0019] Step 1. Add rare earth elements 8ppbw~120ppmw to solar-grade polycrystalline silicon raw materials, and use conventional CZ method to prepare monocrystalline silicon, or use conventional ingot casting method to prepare polycrystalline silicon. The atomic number concentration of rare earth elements in the single crystal silicon or polycrystalline silicon For 10 10 ~10 16 atoms / cm 3 ;

[0020] Step 2. The monocrystalline silicon or polycrystalline silicon obtained in step 1 is annealed at 700°C to 1000°C to obtain monocrystalline silicon or polycrystalline silicon containing up-conversion light-emitting quantum dots, which is ready.

[0021] The rare earth element is preferably erbium (Er), promethium (Pm), gadolinium (Gd), holmium (Ho), thulium (Tm) or samarium (Sm). Or an oxide of one of the rare earth elements erbiu...

Example Embodiment

[0022] Example 1

[0023] Single crystal silicon A and single crystal silicon B are selected. Single crystal silicon A is P-type single crystal silicon obtained by the conventional CZ method, and single crystal silicon B is made by adding 50ppbw erbium (Er) to the solar-grade polycrystalline silicon raw material by the CZ method , Select a section from single crystal silicon A and single crystal silicon B respectively to obtain single crystal silicon A'section and single crystal silicon B'section. Among them, the single crystal silicon A section and the single crystal silicon B section are not subjected to annealing treatment. The silicon A'section and the monocrystalline silicon B'section are annealed at 800°C for 2 hours; the above-mentioned four-stage crystal is sliced ​​to prepare solar cells, and the conversion efficiency is tested with a solar cell characteristic tester, and the following data is obtained, see table 1:

[0024] Table 1. Comparison of the conversion efficienc...

Example Embodiment

[0026] Example 2

[0027] Single crystal silicon C and single crystal silicon D are selected. Single crystal silicon C is a P-type single crystal silicon prepared by conventional CZ method, and single crystal silicon D is a solar-grade polycrystalline silicon raw material mixed with 100ppbw promethium (Pm) and prepared by CZ method For monocrystalline silicon, select a section from monocrystalline silicon C and monocrystalline silicon D respectively to obtain monocrystalline silicon C′ section and monocrystalline silicon D′ section, in which monocrystalline silicon C section and monocrystalline silicon D section are not subjected to annealing treatment , Single-crystal silicon C'and single-crystal silicon D'are annealed at 800℃ for 2 hours; the four-stage crystal is sliced ​​to prepare solar cells, and the conversion efficiency test is performed with a solar cell characteristic tester to obtain the following data, see table 2:

[0028] Table 2. Comparison of conversion efficiency ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of crystalline silicon containing up-conversion luminance quantum dots. The preparation method comprises the following steps: step 1. doping 8ppbw-120ppmw of rare-earth elements into solar polycrystalline silicon materials, utilizing an ordinary CZ method to prepare the monocrystalline silicon, or utilizing an ordinary ingot casting method to prepare the polycrystalline silicon, wherein the concentration of the atom quantity of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms/cm3; and step 2. carrying out annealing treatment on the monocrystalline silicon or the polycrystalline silicon prepared in the step 1 at 700-1000 DEG C, so as to obtain the monocrystalline silicon or the polycrystalline silicon containing the up-conversion luminance quantum dots. The invention also discloses the monocrystalline silicon prepared by the method, and the concentration of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms/cm3. With the adoption of the preparation method, the absorption of silicon materials to an infrared spectrum is increased, and the conversion efficiency is improved greatly.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon preparation, and relates to a method for preparing crystalline silicon containing up-conversion luminescent quantum dots, and also relates to the crystalline silicon containing up-conversion luminescent quantum dots prepared by the method. Background technique [0002] Solar cells can directly convert light energy into electrical energy, which is a way to effectively utilize solar energy and is also an important renewable and clean energy source. In the past ten years, in the rapidly developing photovoltaic industry, high efficiency and low cost have been the two main points of competition. [0003] As the most important solar cell material at present, crystalline silicon has always occupied a large share of the photovoltaic market due to its high efficiency and stability. At present, the main obstacle limiting the large-scale application of crystalline silicon solar cells is still it...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0256H01L31/18
CPCY02P70/50
Inventor 张群社祁伟
Owner LONGI GREEN ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap