Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon

A technology of luminescent quantum and crystalline silicon, which is applied in the direction of semiconductor devices, final product manufacturing, sustainable manufacturing/processing, etc., can solve the problems of low conversion efficiency and low light absorption utilization rate of crystalline silicon solar cells, and achieve improved conversion efficiency, Improve the utilization rate of absorption and increase the effect of absorption

Active Publication Date: 2014-11-26
LONGI GREEN ENERGY TECH CO LTD
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] Another object of the present invention is to provide a method for preparing crystalline silicon containing up-conversion luminescent quantum dots, which solves the problems of low light absorption utilization rate of crystalline silicon in the infrared band region and low conversion efficiency of crystalline silicon solar cells in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon
  • Crystalline silicon containing up-conversion luminance quantum dot and preparation method of crystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0018] The preparation method of crystalline silicon containing up-conversion luminescent quantum dots of the present invention comprises the following steps:

[0019] Step 1. Doping 8ppbw~120ppmw of rare earth elements into the solar-grade polysilicon raw material, using the conventional CZ method to produce monocrystalline silicon, or utilizing the conventional ingot casting method to produce polycrystalline silicon, the atomic number concentration of the rare earth elements in the single crystal silicon or polycrystalline silicon for 10 10 ~10 16 atoms / cm 3 ;

[0020] Step 2. Annealing the single crystal silicon or polycrystalline silicon obtained in step 1 at 700°C to 1000°C to obtain single crystal silicon or polycrystalline silicon containing up-conversion luminescent quantum dots.

[0021] The rare earth element is preferably erbium (Er), promethium (Pm), gadolinium (Gd), holmium (Ho), thulium (Tm) or samarium (Sm). Or an oxide of one of the rare earth elements erbi...

Embodiment 1

[0023] Select monocrystalline silicon A and monocrystalline silicon B, monocrystalline silicon A is P-type monocrystalline silicon obtained by the conventional CZ method, and monocrystalline silicon B is obtained by doping 50ppbw erbium (Er) into solar-grade polycrystalline silicon raw materials and utilizing CZ method. , respectively select a section on single crystal silicon A and single crystal silicon B to obtain single crystal silicon A' section and single crystal silicon B' section, wherein the single crystal silicon section A and single crystal silicon B section do not undergo annealing treatment, and the single crystal silicon section The silicon A' section and the monocrystalline silicon B' section were annealed at 800°C for 2 hours; the above four sections of crystal were sliced ​​to make a solar cell, and the conversion efficiency was tested with a solar cell characteristic tester to obtain the following data, see Table 1:

[0024] Table 1, Example 1 four-section cr...

Embodiment 2

[0027] Select monocrystalline silicon C and monocrystalline silicon D. Monocrystalline silicon C is P-type monocrystalline silicon obtained by the conventional CZ method. Monocrystalline silicon D is obtained by doping 100ppbw promethium (Pm) into solar-grade polycrystalline silicon raw materials and using CZ method. Single crystal silicon, select a section on single crystal silicon C and single crystal silicon D respectively, to obtain single crystal silicon C' section and single crystal silicon D' section, wherein single crystal silicon C section and single crystal silicon D section do not undergo annealing treatment , monocrystalline silicon C′ and monocrystalline silicon D′ sections were annealed at 800°C for 2 hours; the four sections of crystals were sliced ​​to produce solar cells, and the conversion efficiency was tested with a solar cell characteristic tester to obtain the following data, see Table 2:

[0028] Table 2, Example 2 Four sections of crystals are sliced ​​...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a preparation method of crystalline silicon containing up-conversion luminance quantum dots. The preparation method comprises the following steps: step 1. doping 8ppbw-120ppmw of rare-earth elements into solar polycrystalline silicon materials, utilizing an ordinary CZ method to prepare the monocrystalline silicon, or utilizing an ordinary ingot casting method to prepare the polycrystalline silicon, wherein the concentration of the atom quantity of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms / cm3; and step 2. carrying out annealing treatment on the monocrystalline silicon or the polycrystalline silicon prepared in the step 1 at 700-1000 DEG C, so as to obtain the monocrystalline silicon or the polycrystalline silicon containing the up-conversion luminance quantum dots. The invention also discloses the monocrystalline silicon prepared by the method, and the concentration of the rare-earth elements in the monocrystalline silicon or the polycrystalline silicon is 1010-1016atoms / cm3. With the adoption of the preparation method, the absorption of silicon materials to an infrared spectrum is increased, and the conversion efficiency is improved greatly.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon preparation, and relates to a method for preparing crystalline silicon containing up-conversion luminescent quantum dots, and also relates to the crystalline silicon containing up-conversion luminescent quantum dots prepared by the method. Background technique [0002] Solar cells can directly convert light energy into electrical energy, which is a way to effectively utilize solar energy and is also an important renewable and clean energy source. In the past ten years, in the rapidly developing photovoltaic industry, high efficiency and low cost have been the two main points of competition. [0003] As the most important solar cell material at present, crystalline silicon has always occupied a large share of the photovoltaic market due to its high efficiency and stability. At present, the main obstacle limiting the large-scale application of crystalline silicon solar cells is still it...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0256H01L31/18
CPCY02P70/50
Inventor 张群社祁伟
Owner LONGI GREEN ENERGY TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap