Preparation method of resistance switch adopting TiO2/SnO2 composite nano-rods

A resistance switch and nanorod technology, applied in nanostructure manufacturing, nanotechnology, nanotechnology and other directions, can solve the problems of rapid disappearance of materials and continuous refresh, achieve good room temperature resistance switching characteristics, reduce recombination, and large resistance switching effects Effect

Inactive Publication Date: 2013-11-20
SOUTHWEST UNIVERSITY
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Problems solved by technology

The main products of the former are dynamic random access memory and static random access memory. The data storage speed is fast, but when the power is turned off, the stored data will disappear quickly, so the stored information needs to be constantly refreshed

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  • Preparation method of resistance switch adopting TiO2/SnO2 composite nano-rods
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  • Preparation method of resistance switch adopting TiO2/SnO2 composite nano-rods

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Embodiment Construction

[0024] Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0025] figure 1 For the embodiment, directly grow TiO on the conductive substrate by hydrothermal method 2 / SnO 2 Schematic illustration of composite nanorod arrays, as figure 1 As shown, the TiO in this example 2 / SnO 2 A preparation method for a composite nanorod resistance switch, comprising the following steps:

[0026] 1) Weigh 200 μL of tetraisopropyl titanate and 7 mL of concentrated hydrochloric acid (12mol / L) and dissolve them in 6.5 mL of deionized water, then add an appropriate amount of SnCl at a molar ratio of 1:1 4 ·5H 2 0, stirred to form a mixed solution, and transferred the mixed solution to a 50mL reaction kettle with a polytetrafluoroethylene liner; then the cleaned FTO conductive glass (with an area of ​​about 3cm 2 , followed by ultrasonic cleaning with acetone, ethanol, and deionized water) were inserted into...

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Abstract

The invention discloses a preparation method of a resistance switch adopting TiO2/SnO2 composite nano-rods. The preparation method comprises the following steps: 1), directly growing TiO2/SnO2 composite nano-rod arrays on a conductive substrate according to a hydrothermal method; 2) annealing the conductive substrate, which is obtained in step 1) and provided with the TiO2/SnO2 composite nano-rod arrays grown thereon under 200 to 800 DEG C for 1 to 5 hours, so as to obtain the resistance switch adopting the TiO2/SnO2 composite nano-rods. The preparation method has the advantages that the indoor temperature resistance switch characteristic of the resistance switch adopting the TiO2/SnO2 composite nano-rod array structure can be better; the resistance switch effect under a low temperature can be higher; the circulating stability is favorable; the master mould of a resistance switch-type non-volatile memorizer can be prepared.

Description

technical field [0001] The invention relates to a preparation method of a resistance switch, in particular to a TiO 2 / SnO 2 Preparation method of composite nanorod resistive switch. Background technique [0002] Memory has always occupied a very important position in the entire IC market. According to statistics in 2007, the sales volume of the global memory market has reached 60 billion US dollars, and the market share is still expanding. Currently used memory can be divided into two categories, namely volatile random access memory and non-volatile memory. The main products of the former are dynamic random access memory and static random access memory. The data storage speed is fast, but when the power supply ends, the stored data will disappear quickly, so the stored information needs to be constantly refreshed. The latter mainly include ROM (read-only memory), PROM (programmable memory), EEPROM (electrically erasable memory), Flash (flash memory), etc., their storage...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L45/00H01L27/24B82Y10/00B82B3/00
Inventor 李长明孙柏谷爽
Owner SOUTHWEST UNIVERSITY
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