Method for preparing Schottky contact ZnO nano array ultraviolet detection device

A Schottky contact and nano-array technology, which is applied in the manufacture of semiconductor devices, electrical components, and final products, to achieve the effects of improved absorption, stable performance, and low cost

Inactive Publication Date: 2011-08-03
UNIV OF SCI & TECH BEIJING
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  • Description
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  • Application Information

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  • Method for preparing Schottky contact ZnO nano array ultraviolet detection device
  • Method for preparing Schottky contact ZnO nano array ultraviolet detection device
  • Method for preparing Schottky contact ZnO nano array ultraviolet detection device

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[0023] Example 1:

[0024] 1. When the one-dimensional ZnO nanoarray is grown by the hydrothermal method, first spin-coat a 0.25 M seed solution (a mixed solution of zinc acetate, glycol methyl ether and ethanolamine in a certain proportion) on the cleaned FTO conductive glass. The coating rate is 3000 rpm, the time is 20 s, and the spin coating is 3 times; the crystal seed layer is burned at 350°C for 30 minutes; the concentration of the growth solution is 0.05 M (deionized water, zinc nitrate and hexamethylene tetramine according to certain Proportion of mixed solution) in the reactor at 95°C for 24 hours. After the reaction is completed, a neatly arranged ZnO nanoarray with a length of 2 to 3 um can be obtained.

[0025] 2. When building the device, the dispensing dose of PMMA photoresist spin-coated on the ZnO nanoarray is 5ml / 1×2 cm 2 , The speed is 2500 rpm, the time is 40 s, spin coating 3 times, so that the PMMA glue is evenly filled between the ZnO nano arrays, and the ...

Example Embodiment

[0026] Example 2:

[0027] 1. When the one-dimensional ZnO nanoarray is grown by hydrothermal method, the concentration of the seed solution (zinc acetate, ethylene glycol methyl ether and ethanolamine) is 0.5 M, the spin coating rate is 3500 rpm, the time is 20s, and the spin coating is 3 Second; burn the crystal seed layer at 400 °C for 30 minutes in an electric furnace; grow it at 95 °C for 24 hours in 0.05 M growth solution (deionized water, zinc nitrate and hexamethylenetetramine). Compared with Example 1, the ZnO nanoarray obtained by the reaction is arranged more closely.

[0028] 2. When building the device, when the PMMA photoresist is spin-coated on the ZnO nanoarray, the dosage is 8ml / 1×2 cm 2 , Before spin coating, let it stand for 10 s, then set the speed to 3500 rpm, spin coating 50 s, spin coating 3 times, the thickness of the glue layer is 750nm; bake 2 hours before 175 °C; set during oxygen plasma etching Air pressure is 10 Pa, power: 100 W, O 2 Gas flow rate: 2...

Example Embodiment

[0029] Example 3:

[0030] 1. When the one-dimensional ZnO nanoarray is grown by the hydrothermal method, the concentration of the seed solution (mixed solution of zinc acetate, ethylene glycol methyl ether and ethanolamine) is spin-coated on the FTO at a concentration of 0.5 M, the spin-coating rate is 3500 rpm, and the time is 20s. Spin coating 3 times; burn the crystal seed layer in an electric furnace at 400 °C for 30 minutes; grow in a growth solution (mixed solution of deionized water, zinc nitrate and hexamethylenetetramine) at a concentration of 0.05 M for 24 hours at 95 °C , You can get a neat ZnO nano array.

[0031] 2. When building the device, when the PMMA photoresist is spin-coated on the ZnO nanoarray, the dosage is 8ml / 1×2 cm 2 , The first rotation speed is 600 rpm, spin coating 6 s, the second rotation speed is 3500 rpm, spin coating 60 s, this spin coating process is repeated 3 times, the thickness of the glue layer is 1000nm, the spin coating photoresist layer ...

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Abstract

The invention provides a method for preparing a Schottky contact ZnO nano array ultraviolet detection device. The method comprises the following steps of: growing a ZnO nano array on a piece of cleaned fluorine-doped tin oxide (FTO) conductive glass; spinning polymethyl methacrylate (PMMA) photoresist on the well grown ZnO nano array so that the photoresist permeates the gaps of the array; performing pre-drying so that the photoresist is tightly adhered with the array; performing oxygen plasma etching after pre-drying to etch the PMMA photoresist at the end part of the array so as to facilitate electrode deposition of the next step; performing deposition of metal electrodes with thickness of 50 to 100 nanometers by using a vacuum coating machine; performing annealing treatment so that the electrodes are better contacted with the ZnO nano array; and finally, leading out copper leads from the Pt electrode and the FTO electrode to perform a photoelectric performance test. The ultraviolet of the prepared device can be irradiated from the back, and the device has simple structure, low cost and stable performance and provides possibility for later practical application.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanometer materials and nanometer functional devices, and in particular provides a method for preparing a Schottky contact type ZnO nano-array ultraviolet light detection device. The ultraviolet light detection device constructed by the method can allow ultraviolet light to be incident from the back, and has a simple structure, low cost and stable performance. Background technique [0002] Ultraviolet light detectors have broad application prospects in national defense, ultraviolet astronomy, environmental monitoring, fire detection, turbine engine combustion efficiency monitoring, combustible gas composition analysis, and biological cell cancer detection, and have extremely high military and civilian values. In recent years, it has become one of the hot spots in the field of photoelectric detection in the world. Due to the advantages of small size, wide spectral response range, high quant...

Claims

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Application Information

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IPC IPC(8): H01L31/18H01L31/108H01L31/0224B81C1/00
CPCY02P70/50
Inventor 张跃林伟花闫小琴张晓梅秦子张铮
Owner UNIV OF SCI & TECH BEIJING
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