16 results about "Pt electrode" patented technology

The invention belongs to the field of alkaline water electrolysis hydrogen production. The invention discloses an AEM electrode electroplating preparation method and application. The method provided by the invention is mainly an electroplating preparation method of an AEM electrode, and is characterized by comprising the following steps: S1, preparing a weakly acidic electroplating solution containing nickel and iron ions, which comprises a nickel salt, an iron salt, a conductive salt and a buffer agent; s2, the pretreated nickel felt serves as a cathode, a Pt-plated electrode serves as an anode, and the nickel felt and the Pt-plated electrode are placed in an electroplating solution to be electroplated; and S3, an electroplating product is dried and then subjected to heat treatment. The AEM electrode prepared by the method can keep good stability in a water electrolysis test at 60 DEG C, and is excellent in electrolysis performance.

The invention discloses an oxygen concentration sensor coupled with temperature detection, and belongs to the technical field of oxygen concentration sensing, a temperature sensing module and a first signal quick connector form a temperature measuring unit, and the temperature sensing module is used for sensing a temperature signal when the temperature sensing module is immersed in liquid lead bismuth alloy; and temperature data are transmitted through the first signal quick connector. A Pt electrode, a positive electrode lead, a negative electrode connecting wire and a second signal quick connector form an electromotive force measuring unit which is used for sensing oxygen partial pressure difference between the liquid lead-bismuth alloy and a reference electrode when the YSZ ceramic tube is immersed in the liquid lead-bismuth alloy and transmitting electromotive force data through the second signal quick connector; and the measured temperature data and electromotive force data are synchronized, and the oxygen concentration is obtained through a Nernst equation.

The invention relates to a high-temperature self-stabilization ferroelectric domain wall memory based on bismuth oxide (BFO) and a preparation method thereof, a memory function layer is formed by sequentially depositing an STO buffer layer with the thickness of 5 nm, a BFO film with the thickness of 100 nm and a planar Pt electrode pair on a strontium titanate (STO) substrate in the [001] direction, the STO substrate is obliquely cut by 0.2 degree in the [100] direction, the BFO film is of a stripe domain structure, and the electrode gap is not smaller than 500 nm. Through the limiting effect of a beveled substrate step, the BFO ferroelectric film only forms two polarization orientations, a periodic stripe domain structure is obtained, the polarization overturning controllability is improved, the electrode is prepared by adopting an electron beam photoetching and ion etching combined process, the electric domain overturning is ensured to penetrate through the film thickness, and the performance of the BFO ferroelectric film is improved. After 105 times of voltage pulse cycles at a high temperature of 135 DEG C, the device still keeps a rectification ratio greater than or equal to 25: 1, the turnover polarization retentivity is high, and the domain wall current attenuation rate is small. The bottleneck that a traditional FeRAM fails in a high-temperature environment is broken through, the storage density potential is larger than 1 Gb, and the FeRAM has the effect of being suitable for high-temperature application scenes such as aerospace, vehicle-mounted electronics and geothermal exploration.

To provide a thermistor element exhibiting minimal characteristic change over time in high-temperature environments or heat resistance tests, a temperature sensor including the same, and a manufacturing method for the thermistor element.SOLUTION: The thermistor element includes a thermistor body 2 containing an oxide thermistor material having a perovskite crystal structure, and a pair of electrodes 3 formed on the thermistor body. The electrodes include a Pt electrode layer 3a formed on the surface of the thermistor body, and an intermetallic compound layer 3b including Pt, Sn, and M formed outside the Pt electrode layer. M is at least one of Ag, Ni, Co, and Mn, and the thickness of the intermetallic compound layer is 50 nm or more.SELECTED DRAWING: Figure 1

The invention discloses a room-temperature nitrogen dioxide sensor based on a Mn-TiO2 / TiO2 homojunction thin film material and a preparation method of the room-temperature nitrogen dioxide sensor, and relates to the technical field of nitrogen dioxide gas detection. The preparation method comprises the following steps: S1, growing and preparing a Mn-TiO2 / TiO2 homojunction film gas sensitive material on an FTO (Fluorine-doped Tin Oxide) substrate through a two-step hydrothermal method; s2, sputtering a Pt electrode on the surface of the Mn-TiO2 / TiO2 homojunction film through magnetron sputtering to obtain a resistance type nitrogen dioxide sensor; the invention provides a room-temperature nitrogen dioxide sensor. The sensitivity and selectivity of TiO2 to nitrogen dioxide at room temperature are improved through Mn doping and homojunction construction; the advantages of p-type doping, construction of a homogeneous p-n junction and Pt electrode modification are combined, the response and working consistency of the TiO2 material at room temperature is greatly improved, and the method has important practical application value for further promoting the development of semiconductor gas sensitive devices.

The invention belongs to the field of spintronics, and discloses a binary logic gate device based on magnetic vortex polarity regulation and control, a plurality of ferromagnetic nanodisks are arranged above a ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt, and magnetostatic coupling exists between the ferromagnetic nanodisks and the coupling nanobelt; the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt is vertically crossed and communicated with the bias nano-magnet, the bias nano-magnet directly faces the Pt electrode on one side, the three Pt electrodes are connected with a Pt layer in the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt film structure, the width of the Pt electrodes is equal to the width of the coupling nanobelt, the length of the Pt electrodes is smaller than micron, and the thickness of the coupling nanobelt is smaller than that of the bias nano-magnet. A pair of magnetic tunnel junction electrodes is arranged above the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelts and arranged left and right, and the magnetic tunnel junction electrodes are vertically connected with the coupling nanobelts, so that important theoretical support and experimental scheme are provided for developing a next-generation magnetic logic device with high density and low power consumption; and the method has important scientific significance and application value for promoting the development of spintronics devices.

The useful solution refers to the "fabrication process of V2O5 / SnS2 nanocomposite materials for use as a sensor to measure NH3 gas at room temperature" based on the hydrothermal method using NH4VO3 powder as a source material to form V2O5 nanorods and SnCl4.5H2O to form SnS2 nanosheets. These are then subjected to magnetic stirring, hydrothermal processing, centrifugal washing, and annealing to create V2O5 nanorods and SnS2 nanosheets. The two nanomaterials are mixed and ground in different ratios, then dissolved in a solvent, and the V2O5 / SnS2 nanocomposite material is applied by dripping it onto a Cr / Pt electrode and annealing in a vacuum to fabricate the sensor. The gas-sensitive material is the V2O5 / SnS2 nanocomposite material directly applied to the comb-shaped electrode. The sensor can measure NH3 and several other gases such as NO2, C2H6O, H2, C3H8O, C3H6O, and C2H4 at room temperature.This provides a foundation for developing generations of gas sensors based on V2O5 / SnS2 nanocomposite materials for environmental monitoring applications, enhancing their practical applicability in real life.

The invention discloses a method for electrochemically generating Schwartzite in situ and removing Sb (III) and Sb (V) simultaneously, the method comprising the steps: acid mine wastewater is placed in a container, and an anode electrode and a cathode electrode are inserted to form a double electrode electrolytic cell; electrochemical reaction is carried out by constant current method, and the precipitate generated is filtered; wherein, the content of Sb (III) in acid mine wastewater is 0.1 100 mg / L; the content of Sb (V) in acid mine wastewater is 0.1 150 mg / L; the anode electrode is any one of a coated titanium-based electrode, a coated titanium-based electrode, a Pt electrode or a graphite electrode, and the cathode electrode is any one of a 304 stainless steel electrode or a Pt electrode. The method of the present invention realizes the common removal of Sb (III) and Sb (V) in water by electrochemical means, and the method has remarkable removal effect, and no complicated adsorbent preparation process, no addition of exogenous agents, and process is simple, easy to operate.

The invention discloses a perovskite oxide film proton conduction in-situ detection device and method based on resistance real-time monitoring, and belongs to the technical field of functional materials and electrochemical sensing. According to the invention, a SrCoO2.5 thin film is epitaxially grown on a SrTiO3 single crystal substrate by adopting pulse laser deposition, and a Pt electrode is prepared on the surface of the thin film to form a resistance measurement structure; a sample is placed in a sealed cavity capable of independently and accurately controlling temperature, humidity and atmosphere, controllable partial pressure water vapor is introduced, a high-precision resistance meter is used for carrying out continuous, real-time and high-frequency collection on a thin-film resistor, and changes of the temperature, the humidity and the gas partial pressure along with time are synchronously recorded. The SrCoO2.5 film is subjected to hydration phase change when encountering water vapor to generate a hydrated phase SCOH, the resistivity is sharply reduced by more than four orders of magnitude, and the reciprocal 1 / R of the resistance is in a linear reduction relation along with time. The rate constant k can be directly obtained by fitting the linear section of the normalized resistor R0 / R (t).

Provided are a thermistor element with minimal characteristic variation over time in a high temperature environment and during a heat resistance test, a temperature sensor including the thermistor element, and a thermistor element manufacturing method. This thermistor element comprises: a thermistor element body 2 having a crystal structure which includes a perovskite-type oxide thermistor material; and a pair of electrodes 3 on which the thermistor element body is formed. The electrodes comprise a Pt electrode layer 3a formed on the surface of the thermistor element body, and an intermetallic compound layer 3b including Pt, Sn, and M formed on the outside of the Pt electrode layer, wherein M is at least one of Ag, Ni, Co, and Mn, and the thickness of the intermetallic compound layer is 50 nm or more.

The present invention relates to a method for preparing 1,4-butanediol from ethylene glycol via 2-haloethanol. The method uses ethylene glycol as a raw material and first undergoes acid-catalyzed halogenation to obtain 2-haloethanol and 2-haloethanol acetate. The 2-haloethanol and 2-haloethanol acetate mixture is then converted into 1,4-butanediol and its ester via electrocatalytic dehalogenation coupling. The halogenation reaction uses a strong acid as a catalyst and is heated under an inert atmosphere to obtain 2-haloethanol and 2-haloethanol acetate with a total selectivity of up to 89%. The electrocatalytic reaction of the 2-haloethanol and 2-haloethanol acetate after the reaction is as follows: 2-iodoethanol and 2-haloethanol acetate, a metal complex, and a base are added to an electrolytic cell containing a solvent, wherein a Pt electrode and an oxide electrode serve as cathodes. The electrolytic cell atmosphere is replaced with an inert gas, sealed, and electrolyzed at room temperature to obtain 1,4-butanediol and 1,4-butanediol diacetate, the products of the dehalogenation coupling of 2-iodoethanol and 2-haloethanol acetate, with a selectivity of up to 91%. The overall 1,4-butanediol selectivity of the two-step process can reach 81%.

The application discloses an electrochromic film with super-long power-off coloring memory time and a preparation method thereof. The film is a titanium dioxide and organic small molecule composite film. The test is completed under a three-electrode system. The three-electrode system comprises a working electrode, an electrolyte, a counter electrode and a reference electrode. The working electrode is a conductive substrate with an electrochromic layer, and the electrochromic layer is a titanium dioxide and organic small molecule composite film. The electrolyte is a 1M LiClO4 / PC solution. The counter electrode is a Pt electrode. The reference electrode is an Ag / AgCl electrode. After the organic small molecules are doped on the titanium dioxide film, the film has excellent performance in cycle stability and coloring efficiency, has greater optical modulation capacity under the same voltage, and has quite excellent performance in power-off coloring memory time, thereby achieving the purpose of energy saving.

This invention discloses an apparatus and method for the electrochemical oxidation of ammonia nitrogen wastewater for complete nitrogen removal. The apparatus includes an equalization tank, an electrolytic cell, and a water storage tank connected sequentially via a liquid delivery pipeline. The electrolytic cell contains an anode and a cathode, which are respectively connected to an external power source via wires. The anode comprises a conductive substrate and a bimetallic single-atom catalyst supported on the conductive substrate. The cathode is selected from one of the following: Pt electrode, Cu electrode, stainless steel electrode, graphite electrode, and nickel electrode. This invention utilizes the bimetallic single-atom catalyst supported on the anode to directly remove ammonia nitrogen from wastewater through electrochemical oxidation. This method effectively achieves complete nitrogen removal without the need for other auxiliary devices, converting ammonia nitrogen in wastewater into environmentally friendly nitrogen gas, thus achieving resource recovery and harmlessness.

The application belongs to the technical field of electrochemiluminescence detection, and particularly relates to a preparation method and application of an electrochemiluminescence sensor based on inverse opal photonic crystals. The main component materials of the sensor are polystyrene microspheres, a luminophore PTCA-TCPP and a catalyst LaCoO3. The polystyrene microspheres are converted into an inverse opal photonic crystal PIOPCs structure in the preparation process of the sensor, so that the light intensity is improved, and meanwhile, the excess polystyrene realizes stable signal output of electrochemiluminescence by bonding the PTCA-TCPP and the LaCoO3. The detection method is a traditional three-electrode system composed of a LaCoO3 / PTCA-TCPP / PIOPCs / GCE modified electrode, an Ag / AgCl electrode and a Pt electrode. The preparation method of the sensor in the application is simple, the stability is good, the sensitivity for AB-PINACA detection is high, and the linear range is wide.

The invention belongs to the technical field of temperature detection, and relates to an ultrafast response self-powered liquid-solid interface temperature detection device based on a hydro-thermal effect and a preparation method of the ultrafast response self-powered liquid-solid interface temperature detection device. The device comprises a flexible water photovoltaic device patch, a voltage amplifier, a voltage and current detection and measurement module and an operation display module, the flexible water photovoltaic device patch is composed of a flexible PEN substrate, an ITO conductive film formed by magnetron sputtering, a PTFE functional layer formed by spin coating and a Pt electrode deposited by magnetron sputtering. According to the device, kinetic energy and sensible heat of recycled water flow in the cooling process are converted into electric energy by utilizing the friction electrification effect of liquid drops and the surface of a solid and the influence of temperature on the electricity generation performance, and real-time detection of the interface temperature is achieved through the corresponding relation between voltage / current and the temperature. The device is compact in structure, flexible, attachable, high in detection precision, free of external power supply, suitable for surface temperature monitoring in a humid environment, a non-power environment or an environment where wiring is difficult, and wide in application prospect.

The present invention discloses a sensor chip metal electrode thermal protection structure and a preparation method thereof, which belongs to the technical field of metal electrode thermal protection structures. The thermal protection structure of the present invention comprises: a sensor substrate, on which an electrode buffer layer and a continuous multi-layer Pt-W electrode are sequentially arranged. In this structure, the Pt electrode is deposited on the W electrode, and this deposition method makes the Pt crystal structure more stable. The present invention can significantly improve the quality of Pt crystals by preparing continuous multi-layer Pt-W electrodes through precise control of the sputtering process, thereby effectively avoiding the secondary crystallization of the Pt electrode in a high-temperature environment, the so-called "agglomeration" phenomenon. The thermal protection structure of the present invention can ensure that the electrode resistance does not increase sharply in a high-temperature environment without affecting the wire bonding, thereby improving the reliability of the thermal resistance sensor working in a high-temperature environment.