7 results about "Pt electrode" patented technology

The invention discloses an oxygen concentration sensor coupled with temperature detection, and belongs to the technical field of oxygen concentration sensing, a temperature sensing module and a first signal quick connector form a temperature measuring unit, and the temperature sensing module is used for sensing a temperature signal when the temperature sensing module is immersed in liquid lead bismuth alloy; and temperature data are transmitted through the first signal quick connector. A Pt electrode, a positive electrode lead, a negative electrode connecting wire and a second signal quick connector form an electromotive force measuring unit which is used for sensing oxygen partial pressure difference between the liquid lead-bismuth alloy and a reference electrode when the YSZ ceramic tube is immersed in the liquid lead-bismuth alloy and transmitting electromotive force data through the second signal quick connector; and the measured temperature data and electromotive force data are synchronized, and the oxygen concentration is obtained through a Nernst equation.

The invention relates to a high-temperature self-stabilization ferroelectric domain wall memory based on bismuth oxide (BFO) and a preparation method thereof, a memory function layer is formed by sequentially depositing an STO buffer layer with the thickness of 5 nm, a BFO film with the thickness of 100 nm and a planar Pt electrode pair on a strontium titanate (STO) substrate in the [001] direction, the STO substrate is obliquely cut by 0.2 degree in the [100] direction, the BFO film is of a stripe domain structure, and the electrode gap is not smaller than 500 nm. Through the limiting effect of a beveled substrate step, the BFO ferroelectric film only forms two polarization orientations, a periodic stripe domain structure is obtained, the polarization overturning controllability is improved, the electrode is prepared by adopting an electron beam photoetching and ion etching combined process, the electric domain overturning is ensured to penetrate through the film thickness, and the performance of the BFO ferroelectric film is improved. After 105 times of voltage pulse cycles at a high temperature of 135 DEG C, the device still keeps a rectification ratio greater than or equal to 25: 1, the turnover polarization retentivity is high, and the domain wall current attenuation rate is small. The bottleneck that a traditional FeRAM fails in a high-temperature environment is broken through, the storage density potential is larger than 1 Gb, and the FeRAM has the effect of being suitable for high-temperature application scenes such as aerospace, vehicle-mounted electronics and geothermal exploration.

The invention belongs to the field of spintronics, and discloses a binary logic gate device based on magnetic vortex polarity regulation and control, a plurality of ferromagnetic nanodisks are arranged above a ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt, and magnetostatic coupling exists between the ferromagnetic nanodisks and the coupling nanobelt; the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt is vertically crossed and communicated with the bias nano-magnet, the bias nano-magnet directly faces the Pt electrode on one side, the three Pt electrodes are connected with a Pt layer in the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelt film structure, the width of the Pt electrodes is equal to the width of the coupling nanobelt, the length of the Pt electrodes is smaller than micron, and the thickness of the coupling nanobelt is smaller than that of the bias nano-magnet. A pair of magnetic tunnel junction electrodes is arranged above the ferromagnetic-antiferromagnetic-ferromagnetic coupling nanobelts and arranged left and right, and the magnetic tunnel junction electrodes are vertically connected with the coupling nanobelts, so that important theoretical support and experimental scheme are provided for developing a next-generation magnetic logic device with high density and low power consumption; and the method has important scientific significance and application value for promoting the development of spintronics devices.

The useful solution refers to the "fabrication process of V2O5 / SnS2 nanocomposite materials for use as a sensor to measure NH3 gas at room temperature" based on the hydrothermal method using NH4VO3 powder as a source material to form V2O5 nanorods and SnCl4.5H2O to form SnS2 nanosheets. These are then subjected to magnetic stirring, hydrothermal processing, centrifugal washing, and annealing to create V2O5 nanorods and SnS2 nanosheets. The two nanomaterials are mixed and ground in different ratios, then dissolved in a solvent, and the V2O5 / SnS2 nanocomposite material is applied by dripping it onto a Cr / Pt electrode and annealing in a vacuum to fabricate the sensor. The gas-sensitive material is the V2O5 / SnS2 nanocomposite material directly applied to the comb-shaped electrode. The sensor can measure NH3 and several other gases such as NO2, C2H6O, H2, C3H8O, C3H6O, and C2H4 at room temperature.This provides a foundation for developing generations of gas sensors based on V2O5 / SnS2 nanocomposite materials for environmental monitoring applications, enhancing their practical applicability in real life.

The invention discloses a perovskite oxide film proton conduction in-situ detection device and method based on resistance real-time monitoring, and belongs to the technical field of functional materials and electrochemical sensing. According to the invention, a SrCoO2.5 thin film is epitaxially grown on a SrTiO3 single crystal substrate by adopting pulse laser deposition, and a Pt electrode is prepared on the surface of the thin film to form a resistance measurement structure; a sample is placed in a sealed cavity capable of independently and accurately controlling temperature, humidity and atmosphere, controllable partial pressure water vapor is introduced, a high-precision resistance meter is used for carrying out continuous, real-time and high-frequency collection on a thin-film resistor, and changes of the temperature, the humidity and the gas partial pressure along with time are synchronously recorded. The SrCoO2.5 film is subjected to hydration phase change when encountering water vapor to generate a hydrated phase SCOH, the resistivity is sharply reduced by more than four orders of magnitude, and the reciprocal 1 / R of the resistance is in a linear reduction relation along with time. The rate constant k can be directly obtained by fitting the linear section of the normalized resistor R0 / R (t).

The application discloses an electrochromic film with super-long power-off coloring memory time and a preparation method thereof. The film is a titanium dioxide and organic small molecule composite film. The test is completed under a three-electrode system. The three-electrode system comprises a working electrode, an electrolyte, a counter electrode and a reference electrode. The working electrode is a conductive substrate with an electrochromic layer, and the electrochromic layer is a titanium dioxide and organic small molecule composite film. The electrolyte is a 1M LiClO4 / PC solution. The counter electrode is a Pt electrode. The reference electrode is an Ag / AgCl electrode. After the organic small molecules are doped on the titanium dioxide film, the film has excellent performance in cycle stability and coloring efficiency, has greater optical modulation capacity under the same voltage, and has quite excellent performance in power-off coloring memory time, thereby achieving the purpose of energy saving.

This invention discloses an apparatus and method for the electrochemical oxidation of ammonia nitrogen wastewater for complete nitrogen removal. The apparatus includes an equalization tank, an electrolytic cell, and a water storage tank connected sequentially via a liquid delivery pipeline. The electrolytic cell contains an anode and a cathode, which are respectively connected to an external power source via wires. The anode comprises a conductive substrate and a bimetallic single-atom catalyst supported on the conductive substrate. The cathode is selected from one of the following: Pt electrode, Cu electrode, stainless steel electrode, graphite electrode, and nickel electrode. This invention utilizes the bimetallic single-atom catalyst supported on the anode to directly remove ammonia nitrogen from wastewater through electrochemical oxidation. This method effectively achieves complete nitrogen removal without the need for other auxiliary devices, converting ammonia nitrogen in wastewater into environmentally friendly nitrogen gas, thus achieving resource recovery and harmlessness.