Method for coarsening surface of GaN-based LED epitaxial wafer

Abstract

The invention provides a method for coarsening the surface of a gallium nitride (GaN)-based light-emitting diode (LED) epitaxial wafer, which comprises the following steps of: (1) preparing an epitaxial wafer, growing a nucleating layer on a substrate epitaxially, growing a GaN buffer layer, an N-type GaN layer, a luminescent layer multi-quantum well structure, a P-type AlGaN layer and a P-type GaN layer on the nucleating layer sequentially, wherein the growth of the P-type GaN layer is divided into two parts; (2) preparing solution of hydrofluoric acid (HF); (3) welding a Pt lead serving as a positive electrode on the surface of the P-type GaN layer by using metal, and connecting a Pt electrode serving as a negative electrode with the HF solution prepared in the step (2); (4) connecting a power supply of 10 to 50 V between the positive electrode and the negative electrode; and (5) corroding, so that an obvious coarsening graph is formed on the surface of the P-type GaN layer. In the method, the coarsened surface of the GaN-based LED epitaxial wafer is prepared by changing the epitaxial growth condition and combining photo-electrochemical (PEC) etching, a process is simple, and the cost is reduced, the coarsening effect is obvious, the light extraction efficiency is high, and the damage of dry etching or high-temperature corrosion to quantum wells is prevented simultaneously.

Description

Technical field [0001] The invention relates to a method for roughening the surface of a gallium nitride-based blue-green light-emitting diode epitaxial wafer, which belongs to the technical field of optoelectronics. Background technique [0002] In recent years, semiconductor light-emitting diodes have received widespread attention, and they have the advantages of small size, high efficiency, and long life. The rapid development of wide band gap III-V semiconductor materials has enabled the commercialization of high-brightness LEDs from green to near-ultraviolet products. At present, light-emitting diodes in the range of ordinary green to ultraviolet are widely used in traffic signal lights, full-color displays, LCD screen backlights, automobile instruments and interior lights. In recent years, ultraviolet light-emitting diodes have entered the market and are mainly used for the detection of biological particles (such as the detection of bacterial spores with an absorption rang...

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Problems solved by technology

However, these methods have disadvantages such as complex process, high cost, and poor roughening effect.

Coarsening by heavy doping of Mg will cause the memory effect of Mg atoms in the reaction chamber, shorten the maintenance cycle of MOCVD equipment, and is not conducive to the stability of production; the process comparison of growing SiOx and other thin films and then preparing masks by photolithography Complicated, it is easy to reduce the yield of the product; and dry etching or high temperature corrosion will cause damage to the quantum well

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