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68results about How to "Good coarsening effect" patented technology

Manufacture method of GaN (gallium nitride)-based LED (light emitting diode) chip with roughened surface

The invention discloses a manufacture method of a GaN (gallium nitride)-based LED (light emitting diode) chip with a roughened surface. The manufacture method comprises the steps that a metal organic chemical vapor deposition method is adopted, a low-temperature GaN buffer layer, an undoped GaN layer, a n-GaN layer, a multi-quantum well layer and a P-GaN layer are sequentially grown on a semiconductor substrate, and a GaN epitaxial wafer is formed; the GaN epitaxial wafer enters PECVD (plasma enhanced chemical vapor deposition) equipment so that sediments are in a nanometer island shape; the epitaxial wafer with the roughened surface is formed by using the nanometer island as an etching mask; one side of the GaN epitaxial wafer is subjected to etching, and a table surface is formed; an ITO (indium tin oxide) film is evaporated on the upper surface of the epitaxial wafer; and a P electrode is manufactured on P-GaN of the GaN epitaxial wafer, an N electrode is manufactured on n-GaN, and the device preparation is completed. The manufacture method has the advantages that the photoetching is not needed, the mask is automatically removed in the etching roughening process, the process is simple, the cost is low, the roughening effect is good, and the light extraction efficiency is high.
Owner:HC SEMITEK CORP

Method for coarsening surface of GaN-based LED epitaxial wafer

The invention provides a method for coarsening the surface of a gallium nitride (GaN)-based light-emitting diode (LED) epitaxial wafer, which comprises the following steps of: (1) preparing an epitaxial wafer, growing a nucleating layer on a substrate epitaxially, growing a GaN buffer layer, an N-type GaN layer, a luminescent layer multi-quantum well structure, a P-type AlGaN layer and a P-type GaN layer on the nucleating layer sequentially, wherein the growth of the P-type GaN layer is divided into two parts; (2) preparing solution of hydrofluoric acid (HF); (3) welding a Pt lead serving as a positive electrode on the surface of the P-type GaN layer by using metal, and connecting a Pt electrode serving as a negative electrode with the HF solution prepared in the step (2); (4) connecting a power supply of 10 to 50 V between the positive electrode and the negative electrode; and (5) corroding, so that an obvious coarsening graph is formed on the surface of the P-type GaN layer. In the method, the coarsened surface of the GaN-based LED epitaxial wafer is prepared by changing the epitaxial growth condition and combining photo-electrochemical (PEC) etching, a process is simple, and the cost is reduced, the coarsening effect is obvious, the light extraction efficiency is high, and the damage of dry etching or high-temperature corrosion to quantum wells is prevented simultaneously.
Owner:HUAWEI TEHCHNOLOGIES CO LTD

Method for coarsening surface of light-emitting diode (LED) with the aid of metal nanoparticles

The invention discloses a method for coarsening a surface of a light-emitting diode (LED) with the aid of metal nanoparticles, belonging to the technical field of manufacture of semiconductor optoelectronic materials and devices. The method comprises the steps: firstly, growing an LED epitaxial wafer on a semiconductor substrate, wherein the LED epitaxial wafer sequentially comprises an N-GaN film, a quantum well layer and a P-GaN layer; then depositing a layer of metal nanoparticles on the surface of the P-GaN layer with the aid of ultraviolet light in the solution of metal salts; placing the LED epitaxial wafer after being deposited with the metal nanoparticles in an etchant solution made from a certain proportion of hydrofluoric acid and oxidant; and performing wet etching with the aid of ultraviolet light. By depositing the metal nanoparticles on the N-GaN film, the electron distribution on the surface of the N-GaN film can be changed, the etching rate is increased, thereby being favorable to forming of a coarsened structure. The method disclosed by the invention is suitable for etching of different semiconductor materials and coarsening of the LED epitaxial wafer; and compared with the prior art, the cost is low, the coarsened area is large, the operation is simple, and an ideal coarsened effect can be obtained.
Owner:SHANDONG UNIV

Reverse-polarity AlGaInP-based LED side wall coarsening method

The invention relates to a reverse-polarity AlGaInP-based LED side wall coarsening method. The method includes the following steps that (1) exposure and development are conducted on a mesa image epitaxial wafer of a reverse-polarity AlGaInP-based LED through an existing photolithographic process, and a constant periodicity edge figure is formed at the periphery of the mesa image epitaxial wafer; (2) the mesa image epitaxial wafer obtained after development in the step (1) is corroded through deionized water containing saturation Br2; (3) cleaning and photoresist removing are conducted on the mesa image epitaxial wafer after being corroded through the step (2) according to the conventional process, and coarsening side wall corresponding to the periodicity edge figure shape is formed. According to the reverse-polarity AlGaInP-based LED side wall coarsening method, the mode that coarsening of the side wall of the LED chip is achieved through the photolithographic technology is first proposed, the light extraction efficiency of the LED, especially the LED chip side face, is improved greatly compared with the prior art, the external quantum efficiency of LED devices is improved, internal heat is reduced, and the service life of the LED is prolonged.
Owner:SHANDONG INSPUR HUAGUANG OPTOELECTRONICS

LED large-area controllable surface coarsening and etching method based on laser

The invention relates to an LED large-area controllable surface coarsening and etching method based on a laser, belonging to the technical field of an LED. The method utilizes semiconductor material for carrying out strong absorption generating gasification on high-power laser with the wavelength less than the band edge absorption wavelength of the semiconductor material, thus realizing surface coarsening for the semiconductor material on the surface of the LED. A high-speed galvanometer or a precise displacement platform is used for controlling the laser processing area or pattern, and can be used for controlling the laser power and the processing line width and depth of focus level adjustment. The LED large-area controllable surface coarsening and etching method can be applied to surface coarsening and etching of the GaAs-based LED and the GaN-based LED of various structures. The laser takes the wavelength less than the band edge absorption wavelength of the processed semiconductor material as reference. The method has the advantages of wide applicable material, rapid processing speed, large area, low cost, good coarsening effect, low damage for the semiconductor material, high controllability of system processing parameters and the like, can effectively solve the problem of p-GaN layer coarsening, and has great application potential in the production of the high-brightness LED.
Owner:SHANDONG UNIV

Coarsening and etching method of large-area controllable surface of SiC substrate light emitting diode (LED) based on laser

The invention provides a coarsening and etching method of a large-area controllable surface of a SiC substrate light emitting diode (LED) based on a laser, belonging to the technical field of LED. The surfaces of the SiC substrate and an LED semiconductor material can be coarsened by utilizing that the semiconductor material highly absorbs high-power laser with a wavelength smaller than the absorption wavelength of the band edge of the semiconductor material to perform gasification. An area and a pattern coarsened and etched by the laser are controlled by a high speed scanner or a precise displacement stage; and the wire width and depth of coarsening and etching are regulated by controlling power and focusing degree of the laser. The method can be applied to coarsening and etching of the surface of the SiC substrate GaN-based LED with various structures. The laser is selected on the basis that the wavelength of the laser is smaller than the absorption wavelength of the band edge of the coarsened and etched semiconductor. The method has the advantages of wide application materials, high coarsening and etching speed, large coarsening and etching area, low cost, good coarsening effect, small damage on the semiconductor material and high controllability of coarsening and etching parameters of the system; and by using the method, the problem of coarsening the p-GaN layer and the SiC substrate can be effectively solved. Thus, the method has a great application potential in high-brightness LED production.
Owner:SHANDONG UNIV

Manufacturing method for GaN-based LED (Light Emitting Diode) chip for coarsening p-GaN layer nanometer bowl-shaped surface

ActiveCN102790153AIncrease chance of shootingIncrease the exit light areaSemiconductor devicesEtchingWater vapor
The invention provides a manufacturing method for a GaN-based LED (Light Emitting Diode) chip for coarsening a p-GaN layer nanometer bowl-shaped surface and relates to the technical field of photoelectric device production. The manufacturing method comprises the following steps: firstly, evaporating a mask cesium chloride film layer for etching on the surface of a P-GaN layer of a GaN epitaxial wafer; filling water vapor into an evaporating platform chamber, thereby forming a plurality of cesium chloride nanometer islands; depositing silicon dioxide layers on the cesium chloride nanometer islands; soaking or ultrasonically treating the epitaxial wafer in deionized water, thereby forming a silicon dioxide nanometer bowl layer; taking the silicon dioxide nanometer bowl layer as an etching mask; after ending the etching, completely removing the silicon dioxide nanometer bowl layer remained on the GaN epitaxial wafer; performing ICP (Inductively Coupled Plasma) etching on one side of the GaN epitaxial wafer, thereby forming a platform; and evaporating an ITO (Indium Tin Oxide) film on the upper surface of the GaN epitaxial wafer. Compared with the conventional GaN-LED, the GaN-LED after being subjected to surface coarsening has the advantage that the luminous power is increased by above 35%.
Owner:YANGZHOU ZHONGKE SEMICON LIGHTING

Polyetherimide chemical roughening and electroplating process

The invention discloses a polyetherimide chemical roughening and electroplating process. The process comprises the following steps of deoiling, wherein deoiling powder is adopted and is matched with ultrasonic equipment to deoil polyetherimide, the operation temperature ranges from 45 DEG C to 55 DEG C, the amount of the deoiling powder ranges from 40 g / L to 60 g / L, and the soaking time ranges from 5 min to 15 min; baking, wherein a high-temperature drying box is used for drying polyetherimide; roughening, wherein a plastic roughening agent is adopted for roughening polyetherimide, and polyetherimide is soaked for 10 min to 30 min under the condition that heating is carried out till the temperature ranges from 80 DEG C to 85 DEG C; neutralization, wherein sulfuric acid and hydrogen peroxide are used for neutralizing the plastic roughening agent, the concentration of each of sulfuric acid and hydrogen peroxide is 30 ml / L, the operation temperature ranges from 20 DEG C to 30 DEG C, and the soaking time ranges from 1 min to 3 min; activation, wherein colloid palladium is used for activating polyetherimide; decollide treatment, wherein decollide liquid is used for soaking polyetherimide; the chemical copper process, wherein the surface of polyetherimide is plated with copper through copper deposition liquor; and electroplating, wherein the surface of polyetherimide is electroplatedwith metal after being plated with copper. According to the polyetherimide chemical roughening and electroplating process, the roughening effect is good, and industrialization can be achieved easily.
Owner:麦德美科技(苏州)有限公司

Environment-friendly method for conducting surface roughening on liquid crystal polymer devices before chemical plating

The invention discloses an environment-friendly method for conducting surface roughening on liquid crystal polymer devices before chemical plating. The environment-friendly method for conducting surface roughening on the liquid crystal polymer devices before chemical plating comprises the following steps: placing liquid crystal polymer (LCP) materials in potassium persulfate roughening liquid, introducing ozone, and conducting roughening treatment under the action of ultrasonic waves; and placing liquid crystal polymers subjected to roughening treatment in an oxidant-removing solution, and then taking out the liquid crystal polymers for cleaning to obtain roughened surfaces. According to the environment-friendly method for conducting surface roughening on the liquid crystal polymer devices before chemical plating, by using low-concentration potassium persulfate as the roughening liquid in combination with ring opening and oxidizing by the ozone and the cavitation and crushing action of the ultrasonic waves, the surfaces of the compound materials are subjected to roughening treatment, adopted technology methods and an adopted formula are environmentally friendly, no flammable, combustible or carcinogenic solvents are used, no high-temperature high-pressure operation is conducted, conventional equipment of an electroplate factory is adopted, the operation steps are simple, and the environment-friendly method for conducting surface roughening on the liquid crystal polymer devices before chemical plating has a good effect, and is especially suitable for large-scale surface roughening treatment of LCP devices of the fields of electronics, communication and micro-electronic machines.
Owner:JIANGSU UNIV OF SCI & TECH

Copper foil surface chromic anhydride passivating treatment process

InactiveCN110219035AGood coarsening effectCoarsening effect improvedChromatisationIsolation effectPhosphoric acid
The invention discloses a copper foil surface chromic anhydride passivating treatment process. The copper foil surface chromic anhydride passivating treatment process comprises the steps of copper foil treatment, degreasing treatment, physical roughening, chemical roughening, curing treatment, obstruction layer arranging, passivation treatment and drying treatment. According to the process, 2000#abrasive paper is used for grinding, ground copper foil is put into a CuSO4 solution contained in a roughening groove to be subjected to chemical roughening, the physical roughening and the chemical roughening are combined, the roughening effect is greatly improved, the better roughening effect is achieved, after curing, alloy liquid is mixed liquid formed through mixing of alloy oxide and phosphoric acid and is adopted for making an obstruction layer, the isolation effect is improved, the oxidation resistance capacity is improved, when passivating treatment is carried out, a passivation powerbinding post is moved backwards from a previous conductive roller, the passivating effect is improved, in the roughening, curing and passivating process, the drug supplementing manner is changed into24-h supplementing of a metering pump from one-time adding, the drug supplementing manner is changed, and the treatment effect is better improved.
Owner:贵州中鼎高精铜箔制造有限公司

Method for manufacturing GaP rough surface of GaAs-based LED wafer

ActiveCN112397624AUniformly roughened surfaceEasy to controlSemiconductor devicesRough surfaceWafering
The invention discloses a method for manufacturing a GaP rough surface of a GaAs-based LED wafer, and the method comprises the steps: preparing a wafer epitaxial layer, carrying out the roughening corrosion of a GaP window layer of the epitaxial layer, dissolving photoresist and roughening corrosion liquid together through a surfactant, forming corrosion sol with a roughening corrosion effect, coating the surface of the GaP window layer with the corrosion sol, baking at a constant temperature of 40-60 DEG C, removing a corrosion film layer and a silicon dioxide layer by using solvents such asacetone and the like, and continuously preparing to obtain an independent tube core; the process method designed by the invention is simple and easy to operate, does not need to introduce special equipment, is lower in cost, is more uniform in coarsening corrosion of the surface of the epitaxial layer, is higher in corrosion controllability, is good in coarsening effect, and solves the problems that the coarsening corrosion is more difficult to control and the coarsening brightness is not improved greatly when a solution is used at present. When the method provided by the invention is used forcoarsening, the light extraction efficiency can be improved by 25-30 percent, and the method has higher practicability.
Owner:SHANDONG INSPUR HUAGUANG OPTOELECTRONICS

Neutral metal surface coarsening treatment solution with super-hydrophilicity and super-oleophilicity, and preparation method and application thereof

ActiveCN111349936AIncrease the surface energy valueImprove adhesionMicro nanoPtru catalyst
The invention provides a neutral metal surface coarsening treatment solution with super-hydrophilicity and super-oleophilicity, and a preparation method and application thereof. The neutral metal surface coarsening treatment solution with super-hydrophilicity and super-oleophilicity comprises the following components according to the total mass of 100%: 2%-10% of chemical components A, 3%-30% of chemical components B and 60%-95% of chemical components C; and the chemical components A comprise mixtures of alkyl siloxane modified nano-silica solutions and catalysts, and the chemical components Acomprise mixtures of fatty acid water alcohol liquid and catalysts. According to the metal surface coarsening treatment solution, through "binary synergy" principles of micro-nano materials, the micro-nano coarsening of the metal surface is achieved, and the super-hydrophilic and super-oleophilic effects of the surface are achieved; and the compatibility of the surface coating materials is higher, and the metal surface adhesion is higher. The coarsening treatment solution provided by the invention is neutral, and is environmentally friendly, safe and recyclable; and zero discharge can be achieved, and the coarsening treatment solution has broad application prospects.
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