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ITO (Indium Tin Oxides) coarsening type evaporation method

An evaporation and roughening technology, applied in vacuum evaporation plating, sputtering plating, ion implantation plating, etc., can solve the problems of affecting light extraction efficiency and high ITO refractive index, achieve good roughening effect, simple and feasible operation , Improve the effect of external quantum efficiency

Inactive Publication Date: 2013-12-18
KUNSHAN AODELU AUTOMATION TECH
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Problems solved by technology

However, due to the high refractive index of ITO in the crystal state after evaporation, when the light is transmitted in the LED chip, it is easy to form a total reflection angle on the surface of the ITO, which affects the light extraction efficiency.

Method used

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Embodiment Construction

[0013] Below in conjunction with specific embodiment, further illustrate the present invention, it should be understood that following specific embodiment is only for illustrating the present invention and is not intended to limit the scope of the present invention, after reading the present invention, those skilled in the art will understand various aspects of the present invention All modifications of the valence form fall within the scope defined by the appended claims of the present application.

[0014] The invention discloses a method for vapor deposition of ITO roughening, comprising the following steps:

[0015] (1) Mix concentrated sulfuric acid and hydrogen peroxide at a ratio of 2:1, and at the same time cool down the mixed acid to 100°C;

[0016] (2) After fully cleaning the epitaxial wafer in the mixed acid for 10 minutes with a basket, rinse with clean water to remove residual chemical substances;

[0017] (3) After fixing the cleaned epitaxial wafer in the plat...

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Abstract

The invention discloses a method for performing ITO (Indium Tin Oxides) coarsening by stepwise ITO evaporation instead of traditional ITO evaporation. The method comprises the following steps of: mixing concentrated sulfuric acid and hydrogen peroxide in proportion of 2: 1; cooling at the same time until reaching 100 DEG C; placing an epitaxial slice into the mixture; fully washing for 5 minutes; taking out the epitaxial slice; cleaning with clean water; fixing the cleaned epitaxial slice into an evaporation pot; and performing the ITO stepwise evaporation mode to change the rate and oxygen flow during the ITO evaporation in each layer, in order to realize the ITO coarsening effect of the outermost layer of the epitaxial slice. The process is simple and feasible in operation; the best ITO surface coarsening effect can be realized after the evaporation based on the process above; and the luminous efficiency is raised, thus the external quantum efficiency of an LED (Light-emitting Diode) chip can be greatly increased.

Description

technical field [0001] The invention relates to the field of photoelectric technology, in particular to an evaporation method for roughening ITO. Background technique [0002] As the third-generation semiconductor material, GaN has the characteristics of wide band gap, high thermal conductivity, high electron saturation and drift rate, and good thermal stability. In today's energy shortage, the high energy efficiency conversion of GaN-based blue or green LED chips has attracted everyone's attention. ITO (Indium Tin Oxide) is widely used in LED chip manufacturing process due to its high visible light transmittance and low resistivity. However, due to the high refractive index of the evaporated crystalline ITO, when the light is transmitted in the LED chip, it is easy to form a total reflection angle on the surface of the ITO, which affects the light extraction efficiency. [0003] Therefore, a new technical solution is needed to solve the above problems. Contents of the i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/30C23C14/08C23C14/02
Inventor 郁彬
Owner KUNSHAN AODELU AUTOMATION TECH
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