Method for manufacturing GaP rough surface of GaAs-based LED wafer

A production method and rough surface technology, which is applied in the field of semiconductor processing optoelectronics, can solve the problems of difficult control of corrosion rate and uniformity of corrosion, large limitation of brightness improvement, large difference of brightness between regions, etc., to achieve easy control and light extraction efficiency Enhanced, high usability effects
CN112397624AActive Publication Date: 2021-02-23SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
Publication Date
2021-02-23

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Abstract

The invention discloses a method for manufacturing a GaP rough surface of a GaAs-based LED wafer, and the method comprises the steps: preparing a wafer epitaxial layer, carrying out the roughening corrosion of a GaP window layer of the epitaxial layer, dissolving photoresist and roughening corrosion liquid together through a surfactant, forming corrosion sol with a roughening corrosion effect, coating the surface of the GaP window layer with the corrosion sol, baking at a constant temperature of 40-60 DEG C, removing a corrosion film layer and a silicon dioxide layer by using solvents such asacetone and the like, and continuously preparing to obtain an independent tube core; the process method designed by the invention is simple and easy to operate, does not need to introduce special equipment, is lower in cost, is more uniform in coarsening corrosion of the surface of the epitaxial layer, is higher in corrosion controllability, is good in coarsening effect, and solves the problems that the coarsening corrosion is more difficult to control and the coarsening brightness is not improved greatly when a solution is used at present. When the method provided by the invention is used forcoarsening, the light extraction efficiency can be improved by 25-30 percent, and the method has higher practicability.
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Description

technical field

[0001] The invention relates to the technical field of semiconductor processing optoelectronics, in particular to a method for manufacturing a GaAs-based LED chip GaP rough surface. Background technique

[0002] A light-emitting diode, referred to as LED (Light Emitting Diode), is a solid-state electroluminescent (EL) semiconductor device that converts electrical energy into light energy. Gallium arsenide is a typical direct transition energy band structure material. The minimum value of the conduction band and the maximum value of the valence band are both in the center of the Brillouin zone, which makes it have a high electro-optical conversion efficiency and is ideal for preparing optoelectronic devices. of excellent materials. Compared with traditional silicon semiconductor materials, gallium arsenide materials have many advantages such as high electron mobility, large band gap, direct band gap, and low power consumption. The electron mobility is about 5...

Claims

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