A kind of manufacturing method of gap rough surface of GAAS-based LED chip

Abstract

The invention discloses a method for making a GaAs-based LED chip GaP rough surface. Firstly, the epitaxial layer of the wafer is prepared, and then roughened and etched on the GaP window layer of the epitaxial layer. The corrosion solution is dissolved together to form a corrosion sol with a coarsening corrosion effect, and then the corrosion sol is coated on the surface of the GaP window layer, baked at a constant temperature at 40-60°C, and then the corrosion film and secondary are removed with a solvent such as acetone. The silicon oxide layer is continuously prepared to obtain an independent tube core; the process method designed in the present invention is simple and easy to operate, does not need to introduce special equipment, and utilizes lower cost, the roughening corrosion of the surface of the epitaxial layer is more uniform, and the corrosion controllability is high. The roughening effect is good, which solves the problem that it is difficult to control the coarsening corrosion by using the solution and the brightness of the roughening is not high. Through the roughening method provided by the invention, the light extraction efficiency can be increased by 25-30%, which has a high practicality.

Description

technical field [0001] The invention relates to the technical field of semiconductor processing optoelectronics, in particular to a method for manufacturing a GaAs-based LED chip GaP rough surface. Background technique [0002] A light-emitting diode, referred to as LED (Light Emitting Diode), is a solid-state electroluminescent (EL) semiconductor device that converts electrical energy into light energy. Gallium arsenide is a typical direct transition energy band structure material. The minimum value of the conduction band and the maximum value of the valence band are both in the center of the Brillouin zone, which makes it have a high electro-optical conversion efficiency and is ideal for preparing optoelectronic devices. of excellent materials. Compared with traditional silicon semiconductor materials, gallium arsenide materials have many advantages such as high electron mobility, large band gap, direct band gap, and low power consumption. The electron mobility is about 5...

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Problems solved by technology

However, this invention still adopts the conventional roughening wet etching method. As long as the solution is used for etching, the roughening corrosion rate will be faster due to its own nature. Generally, the etching can be completed in tens of seconds to a few minutes. The rate and uniformity of corrosion are difficult to control, the roughened surface pore structure formed is relatively shallow, and the improvement of brightness by solution roughening is relatively limited

[0005] Chinese patent CN105895750A (201610274404.9) proposes a method for preparing a GaP rough surface of a quaternary chip. The method is as follows: the GaP surface is subjected to sand blasting roughening treatment and wet etching treatment in order to obtain a GaP rough light emitting surface In this invention, holes and defective GaP surfaces are obtained by sandblasting, and the surface is roughened by conventional chemical etching methods. In this invention, deep and stable pore structures can be obtained by sandblasting and chemical etching, and the brightness improvement is more obvious. , but the sandblasting treatment has uncertainty, the hole shape of the overall roughened area is uneven, and the brightness varies greatly by area

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