The invention discloses a method for manufacturing a GaP
rough surface of a GaAs-based LED
wafer, and the method comprises the steps: preparing a
wafer epitaxial layer, carrying out the roughening
corrosion of a GaP window layer of the epitaxial layer, dissolving
photoresist and roughening
corrosion liquid together through a surfactant, forming
corrosion sol with a roughening corrosion effect,
coating the surface of the GaP window layer with the corrosion
sol, baking at a constant temperature of 40-60 DEG C, removing a corrosion film layer and a
silicon dioxide layer by using solvents such asacetone and the like, and continuously preparing to obtain an independent tube core; the process method designed by the invention is simple and easy to operate, does not need to introduce special equipment, is lower in cost, is more uniform in coarsening corrosion of the surface of the epitaxial layer, is higher in corrosion
controllability, is good in coarsening effect, and solves the problems that the coarsening corrosion is more difficult to control and the coarsening brightness is not improved greatly when a solution is used at present. When the method provided by the invention is used forcoarsening, the light extraction efficiency can be improved by 25-30 percent, and the method has higher practicability.