The present invention provides a
solid-state image pick-up device without shading in the
dark state, and capable of making a
dynamic range and a S / N high. Reference numeral 505 denotes an N-type
cathode of a
photodiode, 506 denoting a surface P-type region for forming the
photodiode into an embedded structure, 508a denoting an N-type
high concentration region which forms a
floating diffusion and which is also a drain region of a transfer MOS
transistor. Reference character 508b denotes a polysilicon lead-out
electrode brought into direct contact with the N-type
high concentration region. Light incident from the surface passes through an aperture without a
metal third layer 525 to enter into the
photodiode. Among incident lights, light reflected by the top surface of a gate
electrode 504 of the transfer MOS
transistor is reflected by a first layer
metal 521 right above the polysilicon, so as to repeats reflection a plurality of times to attenuate sufficienly before entering into the
floating diffusion section, thereby making the
aliasing extremely small.