Vertical LED structure and manufacturing method thereof

A technology of LED structure and manufacturing method, which is applied to electrical components, circuits, semiconductor devices, etc., can solve problems such as increasing production costs and increasing LED chip production costs, and achieves solutions to heat dissipation problems, brightness enhancement problems, and production costs. Effect
CN104409585AActive Publication Date: 2015-03-11HANGZHOU SILAN AZURE
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HANGZHOU SILAN AZURE
Publication Date
2015-03-11

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Abstract

The invention provides a vertical LED structure and a manufacturing method thereof. The manufacturing method comprises the following steps: cutting an epitaxial layer into a plurality of insulated and separated independent light emitting semiconductor layers through the ion implantation technique to replace the traditional complex processes of firstly manufacturing an isolation groove and then filling an insulated material, forming an independent contact layer on each independent light emitting semiconductor layer, then forming a net-shaped-structure DBR reflection layer on each independent contact layer to replace a silver specular reflection layer, and then forming an independent metal function layer on the net-shaped-structure DBR reflection layer. According to the invention, the net-shaped-structure DBR reflection layer is arranged on the independent contact layer to replace the silver specular reflection layer, and the cheap independent metal function layer is arranged on the net-shaped-structure DBR reflection layer, the production cost of an LED is reduced while the problems of brightness improvement and heat dissipation are solved, and the manufacturing method is suitable for large-scale commercialized production.
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Description

technical field

[0001] The invention belongs to the field of semiconductor photoelectric chip manufacturing, and in particular relates to a vertical LED structure and a manufacturing method thereof. Background technique

[0002] Since its commercialization in the early 1990s, after more than 20 years of development, GaN-based LEDs have been widely used in indoor and outdoor display screens, lighting sources for projection displays, backlight sources, landscape lighting, advertising, traffic instructions, etc. Field, and known as the most competitive new generation of solid-state light source in the 21st century. However, for the semiconductor light-emitting device LED, in order to replace the traditional light source and enter the high-end lighting field, three problems must be solved at the same time: one is to solve the problem of luminous brightness improvement, the other is to solve the heat dissipation problem, and the third is to solve the production cost reduction. q...

Claims

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