16469results about "Superimposed coating process" patented technology

Disclosed herein is a gas distribution plate for use in a gas distribution assembly for a processing chamber, where the gas distribution plate is fabricated from a solid yttrium oxide-comprising substrate, which may also include aluminum oxide. The gas distribution plate includes a plurality of through-holes, which are typically crescent-shaped. Through-holes which have been formed in the solid yttrium oxide-comprising substrate by ultrasonic drilling perform particularly well. The solid yttrium oxide-comprising substrate-typically comprises at least 99.9% yttrium oxide, and has a density of at least 4.92 g / cm3, a water absorbency of about 0.02% or less, and an average grain size within the range of about 10 μm to about 25 μm. Also disclosed herein are methods for fabricating and cleaning the yttrium oxide-comprising gas distribution plate.

Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed from the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and / or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

Methods of forming garments having one or more stretchable conductive ink patterns. Described herein are method of making garments (including compression garments) having one or more highly stretchable conductive ink pattern formed of a composite of an insulative adhesive, a conductive ink, and an intermediate gradient zone between the adhesive and conductive ink. The conductive ink typically includes between about 40-60% conductive particles, between about 30-50% binder; between about 3-7% solvent; and between about 3-7% thickener. The stretchable conductive ink patterns may be stretched more than twice their length without breaking or rupturing.

The present invention relates to a method for fabricating high performance chip interconnects and packages by providing methods for depositing a conductive material in cavities of a substrate in a more efficient and time saving manner. This is accomplished by selectively removing portions of a seed layer from a top surface of a substrate and then depositing a conductive material in the cavities of the substrate, where portions of the seed layer remains in the cavities. Another method includes forming an oxide layer on the top surface of the substrate such that the conductive material can be deposited in the cavities without the material being formed on the top surface of the substrate. The present invention also discloses methods for forming multi-level interconnects and the corresponding structures.

This invention combines the precision spray process with in-flight laser treatment in order to produce direct write electronic components. In addition to these components, the process can lay down lines of conductive, inductive, and resistive materials. This development has the potential to change the approach to electronics packaging. This process is revolutionary in that components can be directly produced on small structures, thus removing the need for printed circuit boards.

Described herein are precursors and methods for forming silicon-containing films. In one aspect, there is a precursor of following Formula I:wherein R1 and R3 are independently selected from linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing and a C6 to C10 aryl group; R2 and R4 are independently selected from hydrogen, a linear or branched C3 to C10 alkyl group, a linear or branched C3 to C10 alkenyl group, a linear or branched C3 to C10 alkynyl group, a C1 to C6 dialkylamino group, an electron withdrawing, and a C6 to C10 aryl group; and wherein any one, all, or none of R1 and R2, R3 and R4, R1 and R3, or R2 and R4 are linked to form a ring.

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and / or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si-O-Si or Si-N-Si groups with organic side groups attached to the backbone.

Provided are a method for producing a film, which is satisfactory in productivity, exhibits high gas-barrier property immediately after production, and has excellent adhesive strength between constituent layers while maintaining the excellent gas-barrier property, and a gas-barrier film, which is obtained by the method. The method for producing a gas-barrier film includes the steps of; (1) forming an inorganic thin film by a vacuum deposition method on at least one surface of a base film; (2) forming a thin film by a plasma CVD method on the inorganic thin film formed in the step (1); and (3) forming an inorganic thin film by the vacuum deposition method on the thin film formed in the step (2), in which each of the steps (1) and (3), and the step (2) are sequentially carried out at a pressure of 1×10−7 to 1 Pa, and at a pressure of 1×10−3 to 1×102 Pa, respectively.

A thin film is formed using an atomic layer deposition process, by introducing a first reacting material including tantalum precursors and titanium precursors onto a substrate. A portion of the first reacting material is chemisorbed onto the substrate. Then, a second reacting material including oxygen is introduced onto the substrate. A portion of the second reacting material is also chemisorbed onto the substrate, to form an atomic layer of a solid material on the substrate. The solid material may be used as a dielectric layer of the capacitor and / or a gate dielectric layer of the transistor.

Methods of making an article having at least one toughened region and at least one untoughened region involving providing a material, applying a toughening agent to a portion of the material, shaping the material to produce a preform, applying an untoughened resin to the preform, and curing the preform having the applied untoughened resin to produce the at least one toughened region and the at least one untoughened region wherein the toughened region comprises a toughened resin having a fracture toughness of at least about 1.0 MPa-m1 / 2.

The present methods provide tools for growing conformal metal thin films, including metal nitride, metal carbide and metal nitride carbide thin films. In particular, methods are provided for growing such films from aggressive chemicals. The amount of corrosive chemical compounds, such as hydrogen halides, is reduced during the deposition of transition metal, transition metal carbide, transition metal nitride and transition metal nitride carbide thin films on various surfaces, such as metals and oxides. Getter compounds protect surfaces sensitive to hydrogen halides and ammonium halides, such as aluminum, copper, silicon oxide and the layers being deposited, against corrosion. Nanolaminate structures incorporating metallic thin films, and methods for forming the same, are also disclosed.

A method of forming a single-metal film on a substrate by plasma ALD includes: contacting a surface of a substrate with a β-diketone metal complex in a gas phase; exposing molecule-attached surface to a nitrogen-hydrogen mixed plasma; and repeating the above steps, thereby accumulating atomic layers to form a single-metal film on the substrate.

Embodiments of the invention generally provide methods of filling contact level features formed in a semiconductor device by depositing a barrier layer over the contact feature and then filing the layer using an PVD, CVD, ALD, electrochemical plating process (ECP) and / or electroless deposition processes. In one embodiment, the barrier layer has a catalytically active surface that will allow the electroless deposition of a metal on the barrier layer. In one aspect, the electrolessly deposited metal is copper or a copper alloy. In one aspect, the contact level feature is filled with a copper alloy by use of an electroless deposition process. In another aspect, a copper alloy is used to from a thin conductive copper layer that is used to subsequently fill features with a copper containing material by use of an ECP, PVD, CVD, and / or ALD deposition process. In one embodiment, a portion of the barrier layer is purposely allowed to react with traces of residual oxide at the silicon junction of the contact level feature to form a low resistance connection.

The present invention provides an improved LbL-coating process for modifying the surface of a medical device, preferably an ophthalmic device, more preferably a contact lens. An LbL coating on a contact lens, which is prepared according to the process of the invention, can have increased hydrophilicity characterized by an averaged contact angle of about 80 degree or less, preferably about 50 degrees or less, while maintaining the desired bulk properties such as oxygen permeability and ion permeability of lens material.

A gas barrier film includes two or more first barrier layers each made of a first inorganic material and one or more second barrier layers each made of a second inorganic material different from the first inorganic material. Each of the two or more first barrier layers and each of the one or more second barrier layers are alternately stacked. The first inorganic material comprises aluminum oxide. Each of the two or more first barrier layers has a thickness of 3 nm or more. The total thickness of the two or more first barrier layers is 20 nm or less. The two or more first barrier layers and the one or more second barrier layers are formed by atomic layer deposition.

Devices, systems and methods of using same where hybrid substrate materials are provided with a substantially uniform surface to provide uniformity of properties, including interaction with their environments. Uniform surfaces are applied as coatings over, e.g., hybrid metal / silica, metal / polymer, metal / metal surfaces to mask different chemical properties of differing regions of the surface and to afford a protective surface for the hybrid structure.

In an immersion lithography apparatus, the immersion liquid is supplied from a tank via a flow restrictor. The liquid held in the tank is maintained at a substantially constant height above the flow restrictor to ensure a constant flow of liquid.

An apparatus (100) and method are provided for thermally processing substrates (108) held in a carrier (106). The apparatus (100) includes a vessel (101) having a top (134), side (136) and bottom (138), and a heat source (110) with heating elements (112-1, 112-2, 112-3) proximal thereto. The vessel (101) is sized to enclose a volume substantially no larger than necessary to accommodate the carrier (106), and to provide an isothermal process zone (128) extending throughout. In one embodiment, the bottom wall (138) includes a movable pedestal (140) with a bottom heating element therein (112-1), and the pedestal can be lowered and raised to insert the carrier (106) into the vessel (101). The apparatus (100) can include a movable shield (146) that is inserted between the pedestal (140) and the carrier (106) to shield the substrates (108) from the heating element (112-1) and to maintain pedestal temperature. A magnetically coupled repositioning system (162) repositions the carrier (106) during processing of the substrates (108) without use of a movable feedthrough into the volume enclosed by the vessel (101), and without moving the bottom heating element (112-1) in the pedestal (140).

Methods of processing films on substrates are provided. In one aspect, the methods comprise treating a patterned low dielectric constant film after a photoresist is removed form the film by depositing a thin layer comprising silicon, carbon, and optionally oxygen and / or nitrogen on the film. The thin layer provides a carbon-rich, hydrophobic surface for the patterned low dielectric constant film. The thin layer also protects the low dielectric constant film from subsequent wet cleaning processes and penetration by precursors for layers that are subsequently deposited on the low dielectric constant film.

Embodiments described herein provide a method for forming two titanium nitride materials by different PVD processes, such that a metallic titanium nitride layer is initially formed by a PVD process in a metallic mode and a titanium nitride retarding layer is formed over a portion of the metallic titanium nitride layer by a PVD process in a poison mode. Subsequently, a first aluminum layer, such as an aluminum seed layer, may be selectively deposited on exposed portions of the metallic titanium nitride layer by a CVD process. Thereafter, a second aluminum layer, such as an aluminum bulk layer, may be deposited on exposed portions of the first aluminum layer and the titanium nitride retarding layer during an aluminum PVD process.

Components (1) have a thermal barrier coating (2-6) on the surface thereof, wherein the thermal barrier coating includes at least one layer (3) having chemically stabilized zirconia, and wherein at least indirectly adjacent to the layer (3) with chemically stabilized zirconia and on its surface facing side, there is provided a protective layer (4) and / or a infiltration zone (5) which does not react with environmental contaminant compositions that contain oxides of calcium and which does not react with the material of the layer (3) having chemically stabilized zirconia. Methods for making such components as well as to uses of specific systems for coating thermal barrier coatings, can prevent CMAS.

An improved wire bonding process for copper-metallized integrated circuits is provided by a nickel layer that acts as a barrier against up-diffusing copper. In accordance with the present invention the nickel bath is placed and remains in hydrogen saturation by providing a piece of metal that remains in the nickel plating tank before and during the plating process.

Coatings applicable to a variety of substrate articles, structures, materials, and equipment are described. In various applications, the substrate includes metal surface susceptible to formation of oxide, nitride, fluoride, or chloride of such metal thereon, wherein the metal surface is configured to be contacted in use with gas, solid, or liquid that is reactive therewith to form a reaction product that is deleterious to the substrate article, structure, material, or equipment. The metal surface is coated with a protective coating preventing reaction of the coated surface with the reactive gas, and / or otherwise improving the electrical, chemical, thermal, or structural properties of the substrate article or equipment. Various methods of coating the metal surface are described, and for selecting the coating material that is utilized.

Embodiments of the invention generally provide a cluster tool that is configured to electrolessly fill features formed on a substrate. More particularly, embodiments of the invention are used to integrate the filling of an interconnect or contact level feature using an electroless fill process and material removal steps. A typical sequence for forming an interconnect includes depositing one or more non-conductive layers, etching at least one of the layer(s) to form one or more features therein, depositing a barrier layer in the feature(s) and depositing one or more conductive layers, such as copper, to fill the feature.

Embodiments as described herein provide methods for depositing a material on a substrate during electroless deposition processes, as well as compositions of the electroless deposition solutions. In one embodiment, the substrate contains a contact aperture having an exposed silicon contact surface. In another embodiment, the substrate contains a contact aperture having an exposed silicide contact surface. The apertures are filled with a metal contact material by exposing the substrate to an electroless deposition process. The metal contact material may contain a cobalt material, a nickel material, or alloys thereof. Prior to filling the apertures, the substrate may be exposed to a variety of pretreatment processes, such as preclean processes and activations processes. A preclean process may remove organic residues, native oxides, and other contaminants during a wet clean process or a plasma etch process. Embodiments of the process also provide the deposition of additional layers, such as a capping layer.

A method for making a Si-containing material comprises transporting a pyrolyzed Si-precursor to a substrate and polymerizing the pyrolyzed Si-precursor on the substrate to form a Si-containing film. Polymerization of the pyrolyzed Si-precursor may be carried out in the presence of a porogen to thereby form a porogen-containing Si-containing film. The porogen may be removed from the porogen-containing Si-containing film to thereby form a porous Si-containing film. Preferred porous Si-containing films have low dielectric constants and thus are suitable for various low-k applications such as in microelectronics and microelectromechanical systems.