296 results about "Thermal chemical vapor deposition" patented technology

A method of depositing a dielectric film exhibiting a low dielectric constant in a semiconductor and/or integrated circuit by chemical vapor deposition (CVD) is provided. The film is deposited using an organosilicon precursor in a manner such that the film is comprised of a backbone made substantially of Si-O-Si or Si-N-Si groups with organic side groups attached to the backbone.

Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, which uses precursors more reactive with the mandrels. Where the mandrels are formed of amorphous carbon and the spacer material is silicon oxide, the silicon oxide is first deposited by a plasma enhanced deposition process and then by a thermal chemical vapor deposition process. Oxygen gas and plasma-enhanced tetraethylorthosilicate (TEOS) are used as reactants in the plasma enhanced process, while ozone and TEOS are used as reactants in the thermal chemical vapor deposition process. The oxygen gas is less reactive with the amorphous carbon than ozone, thereby minimizing deformation of the mandrels caused by oxidation of the amorphous carbon.

A method for forming an integrated circuit structure on a semiconductor substrate comprises depositing a high k gate dielectric material over the substrate using an atomic layer deposition process. A silicon oxide capping layer is deposited over the gate dielectric material in a rapid thermal chemical vapor deposition process. A gate electrode is formed over the silicon oxide capping layer.

Pitch multiplication is performed using a two step process to deposit spacer material on mandrels. The precursors of the first step react minimally with the mandrels, forming a barrier layer against chemical reactions for the deposition process of the second step, which uses precursors more reactive with the mandrels. Where the mandrels are formed of amorphous carbon and the spacer material is silicon oxide, the silicon oxide is first deposited by a plasma enhanced deposition process and then by a thermal chemical vapor deposition process. Oxygen gas and plasma-enhanced tetraethylorthosilicate (TEOS) are used as reactants in the plasma enhanced process, while ozone and TEOS are used as reactants in the thermal chemical vapor deposition process. The oxygen gas is less reactive with the amorphous carbon than ozone, thereby minimizing deformation of the mandrels caused by oxidation of the amorphous carbon.

Apparatuses and methods are described that involve the deposition of polymer coatings on substrates. The polymer coatings generally comprise an electrically insulating layer and/or a hydrophobic layer. The hydrophobic layer can comprise fused polymer particles have an average primary particle diameter on the nanometer to micrometer scale. The polymer coatings are deposited on substrates using specifically adapted plasma enhanced chemical vapor deposition approaches. The substrates can include computing devices and fabrics.

The invention discloses a method for preparing a precursor for chemical vapor deposition of metallic rhenium and belongs to the technical field of material preparation. According to the method, ReCl5 is made to react in an oxidizing atmosphere, efficient solid-liquid-gas separation is conducted on reactants and products with a sand core filter bulb so that reactants, reaction products and waste gas can be effectively separated, the reaction products ReOCl4 and ReO3Cl are gathered in a collection vessel heated by an oil bath pan at the same time, oxygen introduction is stopped after reaction ends, circulation of inert gases is maintained, a tube furnace is cooled, the oil bath pan is heated at the same time to enable ReO3Cl to volatilize to enter a rectification unit to be collected, ReOCl4 is purified, and then the high-purity precursor ReOCl4 for chemical vapor deposition of metallic rhenium is obtained. By the adoption of the method, reaction efficiency is high, ReOCl4 and ReO3Cl are separated through rectification, and the purity of the product ReOCl4 is improved.

Embodiments described herein relate to methods for forming patterns of semiconductor devices utilizing parylene gapfill layers deposited using a thermal chemical vapor deposition (CVD) process. In one embodiment the patterns of semiconductor devices are formed by forming amorphous carbon (a-C) mandrels on first layers, depositing amorphous silicon (a-Si) layers over the a-C mandrels and the first layers, etching the a-Si spacer layers to expose top surfaces of the a-C mandrels and to expose the first layers, depositing parylene gapfill layers using the CVD process, removing portions of the parylene gapfill layers until the top surfaces are exposed; and removing the a-Si spacer layers to expose the first layers and form patterns of semiconductor devices having a-C mandrels and parylene mandrels.

In one embodiment a method for fabricating a compound nitride semiconductor device comprising positioning one or more substrates on a susceptor in a processing region of a metal organic chemical vapor deposition (MOCVD) chamber comprising a showerhead, depositing a gallium nitride layer over the substrate with a thermal chemical-vapor-deposition process within the MOCVD chamber by flowing a first gallium containing precursor and a first nitrogen containing precursor through the showerhead into the MOCVD chamber, removing the one or more substrates from the MOCVD chamber without exposing the one or more substrates to atmosphere, flowing a chlorine gas into the processing chamber to remove contaminants from the showerhead, transferring the one or more substrates into the MOCVD chamber after removing contaminants from the showerhead, and depositing an InGaN layer over the GaN layer with a thermal chemical-vapor-deposition process within the MOCVD chamber is provided.

Apparatus and methods are described for fabricating a compound nitride semiconductor structure. Group-III and nitrogen precursors are flowed into a first processing chamber to deposit a first layer over a substrate with a thermal chemical-vapor-deposition process. The substrate is transferred from the first processing chamber to a second processing chamber. Group-III and nitrogen precursors are flowed into the second processing chamber to deposit a second layer over the first layer with a thermal chemical-vapor-deposition process. The first and second group-III precursors have different group-III elements.

A method of forming a dielectric layer is described. The method deposits a silicon-containing film by chemical vapor deposition using a local plasma. The silicon-containing film is flowable during deposition at low substrate temperature. A silicon precursor (e.g. a silylamine, higher order silane or halogenated silane) is delivered to the substrate processing region and excited in a local plasma. A second plasma vapor or gas is combined with the silicon precursor in the substrate processing region and may include ammonia, nitrogen (N₂), argon, hydrogen (H₂) and/or oxygen (O₂). The equipment configurations disclosed herein in combination with these vapor/gas combinations have been found to result in flowable deposition at substrate temperatures below or about 200° C. when a local plasma is excited using relatively low power.

A method for manufacturing carbon nanotubes with an integrally attached outer graphitic layer is disclosed. The graphitic layer improves the ability to handle and manipulate the nanometer size nanotube device in various applications, such as a probe tip in scanning probe microscopes and optical microscopes, or as an electron emitting device. A thermal chemical vapor deposition reactor is the preferred reaction vessel in which a transition metal catalyst with an inert gas, hydrogen gas and a carbon-containing gas mixture are heated at various temperatures in a range between 500° C. and 1000° C. with gases and temperatures being adjusted periodically during the reaction times required to grow the nanotube core and subsequently grow the desired outer graphitic layer.

Filling of narrow and/or high aspect ratio gaps and trenches with silicate glass is accomplished at reduced temperatures and without reflow by etching the glass concurrently with thermal chemical vapor deposition of the glass such that the deposition rate will exceed the etching rate by a relatively small net deposition rate near the surface with the excess deposition rate increasing over the depth of the trench or gap. The as-deposited glass film is made dense and stable by carrying out the concurrent etch and deposition process at an elevated temperature but which is within the maximum temperature and heat budget which can be tolerated by structures formed by previously performed processes. Fluorine can be incorporated in the silicate glass film as a dopant in sufficient concentration to reduce dielectric constant of the film. Phosphorus and/or boron can be incorporated into the film, as well, and may enhance void-free filling of trenches and gaps.

Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO₂ or HfO₂. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

A method for depositing metal layers, such as Ruthenium, on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a metal carbonyl precursor in a deposition system, and depositing a metal layer from the metal carbonyl on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In the deposition system, the metal carbonyl is evaporated in a solid precursor evaporation system, and the precursor vapor is transported to the process chamber via a vapor delivery system. Further, an in-situ cleaning system is coupled to the vapor delivery system in order to perform periodic cleaning of the deposition system. Periodic in-situ cleaning permits achieving a greater deposition rate by operating the deposition system at higher temperature where precursor vapor can decompose and potentially deposit on surfaces of the deposition system.

Systems and methods for synthesizing continuous graphene sheets are provided. The systems and methods include passing a catalyst substrate through a heated chemical vapor deposition chamber and exposing the substrate to a reaction gas mixture of hydrogen and hydrocarbon at a preselected location within the chamber. The reaction gas mixture can include hydrogen having a partial pressure of between about 0 Torr and 20 Torr, hydrocarbon having a partial pressure of between about 20 mTorr and about 10 Torr, and one or more buffer gases. The buffer gases can include argon or other noble gases to maintain atmospheric pressure within the chemical deposition chamber. The resulting graphene can be made with continuous mono and multilayers (up to six layers) and have single crystalline hexagonal grains with a preselected nucleation density and domain size for a range of applications.

The invention discloses a method for coating micro/nano-metal powder by chemical vapor deposition, including: decomposing difluorocarbene precursor gas via a cracking pipe to generate difluorocarbene free radicals; contacting the generated difluorocarbene free radicals with micro/nano-metal powder, and due to polymerization between difluorocarbene free radicals, a compact polytetrafluoroethylene coating film is generated on the surface of micro/nano-metal powder. In allusion to disadvantages and defects of the application of micro/nano-metal powder in energy-containing materials, polytetrafluoroethylene is polymerized on the surface of metal powder by chemical vapor deposition in order to coat micro/nano-metal powder. In the invention, the ignition temperature of metal powder is effectively decreased, the ignition delay time is shortened, and the combustion speed of metal powder is improved; the surface of metal powder coated with polytetrafluoroethylene is highly hydrophobic, so that reactive metal powder can be effectively prevented from absorption of moisture and oxidation.

A low-temperature chemical vapor deposition process for depositing of a low-resistivity ruthenium metal layers that can be used as barrier/seed layers in Cu metallization schemes. The method includes providing a substrate in a process chamber of a deposition system, forming a process gas containing a ruthenium carbonyl precursor vapor and a CO-containing gas, and exposing the substrate to the process gas to deposit a low-resistivity ruthenium metal layer on the substrate by a thermal chemical vapor deposition process, where the substrate is maintained at a temperature between about 100° C. and about 300° C. during the exposing. A semiconductor device containing the ruthenium metal layer formed on a patterned substrate containing one or more vias or trenches, or combinations thereof, is provided.

Carbon nanotubes are directly grown on a substrate surface having three metal layers thereon by a thermal chemical vapor deposition at low-temperature, which can be used as an electron emission source for field emission displays. The three layers include a layer of an active metal catalyst sandwiched between a thick metal support layer formed on the substrate and a bonding metal layer. The active metal catalyst is iron, cobalt, nickel or an alloy thereof; the metal support and the bonding metal independently are Au, Ag, Cu, Pd, Pt or an alloy thereof; and they can be formed by sputtering, chemical vapor deposition, physical vapor deposition, screen printing or electroplating.

The invention relates to a method for preparing a graphene film in a low-temperature condition. The method at least comprises the following steps: (1), performing smooth treatment on a metal substrate; (2), performing doping of a chemical reagent on the surface of the metal substrate obtained in the step (1); (3), under a protective atmosphere, performing annealing treatment on the metal substrate obtained in the step (1); (4), contacting the metal substrate with a carbon source, and performing chemical vapor deposition in the low-temperature condition to obtain the graphene film; and optionally, after the step (4), performing step (5), stopping heating, cooling to the room temperature, and taking out the metal substrate with the graphene film thereon, wherein the chemical reagent is a precursor salt of metal. The method for growing the graphene film is low in growth temperature, low in cost, high in industrialized feasibility and wide in select range of the substrate, and can prepare the complete single-layer or multi-layer graphene film with high quality.