Method for growing graphene film by using low-temperature chemical vapor deposition

Abstract

The invention relates to a method for preparing a graphene film in a low-temperature condition. The method at least comprises the following steps: (1), performing smooth treatment on a metal substrate; (2), performing doping of a chemical reagent on the surface of the metal substrate obtained in the step (1); (3), under a protective atmosphere, performing annealing treatment on the metal substrate obtained in the step (1); (4), contacting the metal substrate with a carbon source, and performing chemical vapor deposition in the low-temperature condition to obtain the graphene film; and optionally, after the step (4), performing step (5), stopping heating, cooling to the room temperature, and taking out the metal substrate with the graphene film thereon, wherein the chemical reagent is a precursor salt of metal. The method for growing the graphene film is low in growth temperature, low in cost, high in industrialized feasibility and wide in select range of the substrate, and can prepare the complete single-layer or multi-layer graphene film with high quality.

Description

technical field [0001] The invention relates to a method for growing a graphene film by low-temperature chemical vapor deposition, and belongs to the field of graphene electronic film materials. Background technique [0002] Graphene is a hexagonal honeycomb-shaped two-dimensional nanomaterial composed of sp2 hybridized carbon atoms. At present, the preparation methods of free-state graphene can be roughly divided into physical methods and chemical methods. Physical methods include micromechanical exfoliation method, epitaxial growth method, epitaxial growth method, etc.; chemical methods include graphite oxide reduction method, chemical vapor deposition method, etc. . Among them, the chemical vapor deposition method can obtain graphene with large area and uniform thickness. Regarding the preparation of graphene, the preparation of large-scale graphene films, and the transfer of large-scale graphene films, those skilled in the art have done some research. Preparation of G...

AI Technical Summary

Problems solved by technology

[0004] The growth temperature of graphene using Au-Ni alloy catalyst can be as low as 450°C, but only 74% of single-layer graphene can be obtained, and Raman spectrum shows that at the grain boundary, the D peak (peak) is significantly higher than the G peak (low peak), poor graphene quality

[0005] Using carbon-containing liquid as a carbon source can also reduce the temperature for growing graphene. It has been reported that benzene was used as a carbon source to grow graphene at 300°C by low-pressure chemical vapor deposition (LPCVD). Unfortunately, the obtained graphene film is not Continuous, difficult to meet the requirements of use