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Electrolytic solution for integrated circuit copper wire laying electrodeposition

An integrated circuit and wiring technology, applied in the field of microelectronics processing, can solve the problem of holes in the deposition surface, and achieve the effects of no hole defects, reduced roughness, and enhanced surface improvement.

Inactive Publication Date: 2009-07-15
TSINGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, during the deposition process, the adsorption and desorption behavior of the accelerator on the electrode surface is greatly affected by the electrode potential, so holes are easily formed on the deposition surface, and dendritic growth patterns appear.

Method used

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  • Electrolytic solution for integrated circuit copper wire laying electrodeposition
  • Electrolytic solution for integrated circuit copper wire laying electrodeposition
  • Electrolytic solution for integrated circuit copper wire laying electrodeposition

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Prepare 5000 ml of electrolyte: heat 3000 ml of deionized water to 40 ° C, add 342 g of copper sulfate, stir to dissolve, slowly add 875 g of concentrated sulfuric acid to the above solution, add water to nearly 5000 ml, continue stirring the solution and After it was cooled to room temperature, 300 mg of hydrochloric acid, 400 mg of polyethylene glycol (MW 6000), 75 mg of sodium polydithiodipropane sulfonate and 25 mg of ethylenethiourea were added, and finally 5000 ml of water was added and stirred evenly.

[0040] Electrodeposition experiments were done in the electrolytic tank, the electrodeposition current density was set to 30 mA / cm2, the deposition substrate was a silicon substrate with a 130 nm copper seed layer grown by surface magnetron sputtering, and the scanning electron microscope and atomic force microscope were observed Surface morphology and parameters after deposition such as Pic 4-1 , 4-2 shown.

[0041]It can be seen from the comparison of Compara...

Embodiment 2

[0043] The preparation process is basically the same as in Example 1, except that the components and contents of 1000 milliliters of electrolyte are: 50 grams of copper sulfate, 150 grams of sulfuric acid, 10 milligrams of chloride ions, and 20 grams of polyethylene glycol (MW 8000). mg, the accelerator sodium alcohol thiopropane sulfonate is 30 mg, the leveling agent thiazolethione is 0.5 mg, and the rest is deionized water.

Embodiment 3

[0045] The preparation process is basically the same as in Example 1, except that the composition and content of 1000 milliliters of electrolyte are: 200 grams of copper sulfate, 50 grams of sulfuric acid, 20 milligrams of chloride ions, and 100 milligrams of sodium dodecylsulfonate , Accelerator sodium phenyl polydithiopropane sulfonate is 5 mg, leveling agent ethylene thiourea is 1 mg, and the rest is deionized water.

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Abstract

The invention provides an electrolyte used in integrated circuit copper cabling electrodeposition, which comprises the following components and contents: 50-200g / liter of copper sulphate, 50-220g / liter of sulphuric acid, 10-150 milligram / liter of chloridion, 5-200 milligram / liter of inhibitor, 5-50 milligram / liter of accelerator, 0.5-20 milligram / liter of leveling agent and the rest of deionized water. As the electrolyte contains the chloridion, inhibitor and accelerator, the surface appearance is improved after electrodeposition and the roughness concentration is reduced. And the leveling agent can increase the adsorption of the accelerator on the surface of electrodes in the deposition process, and then increases the surface improvement effect of the accelerator; the surface roughness of the clad layer is further reduced; the orientation of the clad layer obtained by deposition Cu (111) is dominant; after deposition, the surface dendrite growth mode disappears; and the surface has no hole defects.

Description

technical field [0001] The invention belongs to the copper wiring technology in the field of microelectronic processing, in particular to an electrolyte used for electrodeposition of integrated circuit copper wiring. Background technique [0002] With the development of IC (integrated circuit, integrated circuit) to VLSI / ULSI (very large scale integrated circuit / ultra large scale integrated circuit, large-scale integrated circuit), the device size has entered the deep sub-micron stage, and continues to be fine, complex, and three-dimensional direction development. According to Moore's Law, by 2014 the wiring width as a feature size will reach 35nm. The market requires IC chips to have faster computing speed, better reliability, lower power consumption, lower noise and lower cost. In this case, copper interconnection wiring is used as a substitute for aluminum interconnection wiring The product came into being. [0003] The advantages of Cu as an interconnection metal comp...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25D3/38C25D7/12H01L21/288H01L21/445
Inventor 路新春张伟雒建斌刘宇宏潘国顺
Owner TSINGHUA UNIV
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