Production method of polysilicon rod

A production method and polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of polysilicon growth rate decline, affecting enterprise benefits, etc., to improve surface morphology, improve enterprise benefits, and simple methods Effect

Active Publication Date: 2010-02-24
JIANGSU ZHONGNENG POLYSILICON TECH DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

To improve the surface morphology, the traditional method is to reduce the surface temperature of silicon rods, and it is considered impossible to improve the surface morphology without affecting the growth rate at all. The direct method of reducing the surface temperature will cause the growth rate of polysilicon to increase. Great decline, affecting business efficiency

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  • Production method of polysilicon rod

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Effect test

Embodiment 1

[0031] Polysilicon was grown using silicon cores with a diameter of 5 mm. After the reduction furnace reactor was put into use, the surface reaction temperature was set at 1100°C, and hydrogen gas and trichlorosilane were introduced to react for 35 hours. Trichlorosilane initial flow rate 80Nm 3 / h, in 1Nm 3 / h speed increased to 220Nm at a constant speed 3 / h (about 140h), then keep constant until the reduction reactor is shut down. The initial flow of hydrogen is maintained at 100Nm 3 / h. When the diameter of the silicon rod reaches 50mm, stop applying the current, and at the same time, increase the hydrogen flow rate to 200Nm 3 / h. After 6 hours, when the surface temperature of the silicon rod drops to 1020°C, resume the applied current, and at the same time adjust the hydrogen flow rate to 120Nm 3 / h. Slowly increase the current to increase the surface temperature of the silicon rod, and it takes 45 hours to raise the surface temperature of the silicon rod to about...

Embodiment 2

[0033] Polysilicon was grown using silicon cores with a diameter of 8 mm. After the reduction furnace reactor was put into use, the surface reaction temperature was set at 1180° C., and hydrogen gas and trichlorosilane were introduced to react for 40 hours. The initial flow rate of trichlorosilane is 90Nm 3 / h, in 1Nm 3 / h speed increased to 220Nm at a constant speed 3 / h (about 130h), then keep constant until the reduction reactor is shut down. The initial flow of hydrogen is maintained at 120Nm 3 / h. When the diameter of the silicon rod reaches 50mm, stop applying the current, and at the same time, increase the hydrogen flow rate to 220Nm 3 / h. After 5 hours, when the surface temperature of the silicon rod drops to 1020°C, resume the normal applied current, and at the same time adjust the hydrogen flow rate to 120Nm 3 / h. Slowly increase the current to increase the surface temperature of the silicon rod, and it takes 45 hours to raise the surface temperature of the si...

Embodiment 3

[0035] Polysilicon was grown using silicon cores with a diameter of 6 mm. After the reduction furnace reactor was put into use, the surface reaction temperature was set at 1130° C., and hydrogen gas and trichlorosilane were introduced to react for 37 hours. Trichlorosilane initial flow rate 80Nm 3 / h, at 2Nm 3 / h speed increased to 220Nm at a constant speed 3 / h (about 70h), then keep constant until the reduction reactor is shut down. The initial flow of hydrogen is maintained at 110Nm 3 / h. When the diameter of the silicon rod reaches 50mm, stop applying the current, and at the same time, increase the hydrogen flow rate to 200Nm 3 / h. After 5 hours, when the surface temperature of the silicon rod drops to 1020°C, resume the normal applied current, and at the same time adjust the hydrogen flow rate to 120Nm 3 / h. Slowly increase the current to increase the surface temperature of the silicon rod, and it takes 45 hours to raise the surface temperature of the silicon rod ...

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Abstract

The invention discloses a production method of a polysilicon rod, comprising the following steps: when the surface temperature of a silicon core is 1100-1250 DEG C, leading in hydrogen to react with trichlorosilane for 30-45 hours; when the silicon core grows to have the diameter of 50mm, stopping current, and adding hydrogen flow rate to continuously react for 3-10 hours; when the surface temperature of the polysilicon rod is reduced to1000-1050 DEG C, applying the current, reducing the hydrogen flow rate, raising the surface temperature of the polysilicon rod to about 1080-1100 DEG C and keeping the surface temperature of the polysilicon rod for 30 hours; stopping the current, and increasing the hydrogen flow rate again to react for 2-6 hours; when the surface temperature of the polysilicon rod is reduced to 970-1020 DEG C, reducing the hydrogen flow rate again, applying the current, raising the surface temperature of the polysilicon rod to 1050-1080 DEG C, and then keeping the surface temperature of the polysilicon rod till a reduction reactor is stopped. The production method of the polysilicon rod can obviously improve the surface appearance of solar polysilicon in the production process, and the surface bump area of the polysilicon can be controlled within 8 percent.

Description

technical field [0001] The invention relates to a silicon production method, in particular to a method for producing polysilicon rods by a trichlorosilane reduction method. Background technique [0002] The modified Siemens method produces polysilicon in a bell-jar reactor, where trichlorosilane and hydrogen react to generate high-purity polysilicon materials. Due to various factors such as air flow distribution, temperature distribution, and side effects, the surface of polysilicon will produce uneven gaps and bumps. Silicon powder and gas will remain in these gaps, which will affect the effect of silicon material corrosion and pickling, resulting in increased difficulty and reduced quality of single crystal production. Enterprises that adopt the modified Siemens method for polysilicon production regard improving surface morphology as an important subject for research. [0003] Generally speaking, in the production process of the modified Siemens method, the higher the te...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/035
Inventor 田新梁强陈明元
Owner JIANGSU ZHONGNENG POLYSILICON TECH DEV
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