Production method of polysilicon rod

A production method and polysilicon technology, applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of polysilicon growth rate decline, affecting enterprise benefits, etc., to improve surface morphology, improve enterprise benefits, and simple methods Effect
CN101654249AActive Publication Date: 2010-02-24JIANGSU ZHONGNENG POLYSILICON TECH DEV
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Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
JIANGSU ZHONGNENG POLYSILICON TECH DEV
Publication Date
2010-02-24

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Abstract

The invention discloses a production method of a polysilicon rod, comprising the following steps: when the surface temperature of a silicon core is 1100-1250 DEG C, leading in hydrogen to react with trichlorosilane for 30-45 hours; when the silicon core grows to have the diameter of 50mm, stopping current, and adding hydrogen flow rate to continuously react for 3-10 hours; when the surface temperature of the polysilicon rod is reduced to1000-1050 DEG C, applying the current, reducing the hydrogen flow rate, raising the surface temperature of the polysilicon rod to about 1080-1100 DEG C and keeping the surface temperature of the polysilicon rod for 30 hours; stopping the current, and increasing the hydrogen flow rate again to react for 2-6 hours; when the surface temperature of the polysilicon rod is reduced to 970-1020 DEG C, reducing the hydrogen flow rate again, applying the current, raising the surface temperature of the polysilicon rod to 1050-1080 DEG C, and then keeping the surface temperature of the polysilicon rod till a reduction reactor is stopped. The production method of the polysilicon rod can obviously improve the surface appearance of solar polysilicon in the production process, and the surface bump area of the polysilicon can be controlled within 8 percent.
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Description

technical field

[0001] The invention relates to a silicon production method, in particular to a method for producing polysilicon rods by a trichlorosilane reduction method. Background technique

[0002] The modified Siemens method produces polysilicon in a bell-jar reactor, where trichlorosilane and hydrogen react to generate high-purity polysilicon materials. Due to various factors such as air flow distribution, temperature distribution, and side effects, the surface of polysilicon will produce uneven gaps and bumps. Silicon powder and gas will remain in these gaps, which will affect the effect of silicon material corrosion and pickling, resulting in increased difficulty and reduced quality of single crystal production. Enterprises that adopt the modified Siemens method for polysilicon production regard improving surface morphology as an important subject for research.

[0003] Generally speaking, in the production process of the modified Siemens method, the higher the te...

Claims

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