The invention relates to the technical field of
semiconductor production, in particular to a high-growth-rate EPI production method which comprises the following steps: S1, removing
oxide on the surface of a
silicon substrate by adopting in-situ
hydrogen annealing and repairing
lattice defects; a gradient temperature rising strategy is adopted in the preheating stage, and slip lines caused by thermal stress are reduced; s2, in a
chemical vapor deposition reaction cavity, adopting a double-gas-path injection
system, wherein in a main gas path,
mixed gas of high-flow SiH2Cl2 and H2 is used as a main
silicon source; in the auxiliary gas path, trace SiH4 and HCl are used for inhibiting
gas phase nucleation and adjusting the
surface reaction activity; s3, adopting a double-area
temperature control reaction cavity, wherein a central area is a high-temperature area, and rapid deposition of
silicon atoms is promoted; the marginal area is a low-temperature area and inhibits marginal lattice
distortion; the pressure of the reaction cavity is controlled to be 50-100
Torr; s4, in-situ
doping and real-time monitoring: synchronously introducing
phosphorane or
diborane in the growth process, monitoring the
doping concentration fluctuation in real time through a
light emission spectrum, and feeding back and adjusting the gas proportion.