3 results about "Underpotential deposition" patented technology

This invention relates to a near-infrared detector array based on two-dimensional noble metal chalcogenides, its fabrication method, and its applications, belonging to the field of image sensor technology. First, an underpotential deposition method is used to drive noble metal atoms to self-confinedly deposit on the silicon substrate surface using the potential difference between the noble metal and the silicon substrate, obtaining a wafer-level noble metal thin film. Then, chemical vapor deposition is used to sulfide, selenize, or tellurize the wafer-level noble metal thin film, transforming it in situ into a wafer-level two-dimensional noble metal chalcogenide thin film. Finally, a near-infrared detector array is fabricated using micro-nano fabrication processes. The two-dimensional noble metal chalcogenide near-infrared detector of this invention possesses advantages such as good mechanical flexibility, high mobility, and excellent stability, significantly improving the detector's detection performance.

The application provides a preparation method of an integrated high-entropy monatomic electrode, comprising the following steps: constructing heteroatom anchor points on the surface of a carbon substrate by using plasma; preparing an electrolyte; using the electrolyte, according to a deposition sequence of standard reduction potentials from high to low of metals to be deposited, performing step-by-step underpotential deposition; and obtaining the integrated high-entropy monatomic electrode through post-processing. The application can directly construct a high-activity electrode on a large-size carbon substrate, realize stable coexistence of various metal monatoms, and is suitable for large-scale industrial application.

The invention discloses a zinc sulfide-lead-copper quaternary quantum dot loaded with gold single atoms and a preparation method thereof. The preparation method comprises the following steps: preparing the zinc sulfide-lead-copper quaternary quantum dot; dispersing the zinc sulfide-lead-copper quaternary quantum dots in a water phase to form a quantum dot suspension; mixing the quantum dot suspension with an acid source, fixing the volume, pouring the mixture into an electrolytic tank for deoxidizing treatment, and adding a first copper source to prepare an electrolyte; under a constant potential condition, after copper monoatoms are deposited on the surfaces of the quantum dots in the electrolyte through underpotential deposition, a mixed solution of a gold source is added into the deposited electrolyte, a chemical replacement reaction is carried out, and quantum dot suspension liquid loaded with the gold monoatoms is obtained; and purifying and drying the quantum dot suspension loaded with the gold single atoms to obtain the zinc sulfide-lead-copper quaternary quantum dots loaded with the gold single atoms. According to the method, high-efficiency loading of gold single atoms is realized through a room-temperature water-phase electrochemical method combining underpotential deposition with chemical replacement, and the method has the advantages of high efficiency and low cost and is suitable for industrialization.