32results about How to "Uniform thinning" patented technology

The invention provides a high-melt-strength styrenic resin composition, which comprises the following components proportioned in certain parts by weight: styrenic resin or styrenic alloy, tackifier, antioxidant, lubricating agent agent. Compared with the prior art, the present invention has the following beneficial effects: 1, as the random copolymer of tackifier in the present invention, has thermodynamic compatibility with styrene resin and its alloy, phase separation does not take place, mechanical Excellent performance; 2. The molecular weight of the random copolymer used as a tackifier in the present invention is moderate, and it is easier to plasticize than resins such as rubber powder, high molecular weight SAN powder, heat-resistant powder, etc., so it has better processability, thickness Uniform, low shrinkage, not easy to produce surface defects.

The invention belongs to the technical field of monocrystalline silicon cell production, and especially relates to silicon chip thinning equipment for the monocrystalline silicon cell production technology. A to-be-solved technical problem is to provide the silicon chip thinning equipment which is high in thinning speed, is simple in operation and is uniform in reduced thickness. In order to solve the above problem, the invention provides the silicon chip thinning equipment, and the silicon chip thinning equipment comprises a first rotating shaft, a worm gear, a flat belt, a second rotating shaft, a first bearing seat, a big belt pulley, a gear, a first installation seat, a rack, a sliding block, a sliding rail, and a right frame. The right end of the top of the bottom plate is provided with the right frame through welding, and the upper part of the left side of the right frame is connected with a sliding rail in a mode of bolt connection. The equipment is quick in thinning speed, is simple in operation, is uniform in thinning thickness, plays an important role in thinning, also improves the work efficiency, and is high in safety.

A method for manufacturing a semiconductor device which enables favorable back-surface grinding of a semiconductor substrate with preventing a warp in the substrate, thereby manufacturing a thickness-reduced semiconductor device. A projection electrode is formed on a surface of a wafer. A resin layer is formed on the wafer surface to a thickness to bury a top of the projection electrode. A cut groove is formed in the resin layer along a scribe line formed on the wafer. Thereafter, grinding is made on a back surface of the wafer by the use of a grinder or the like. A surface portion of the resin layer is removed by etching or the like, to expose the top of the projection electrode. The wafer is cut along the cut groove to obtain individual semiconductor chip pieces.

The invention discloses a method for preparing a 2xxx series aluminum alloy transmission electron microscope sample, and belongs to the technical field of transmission electron microscope sample preparation. The method selects a double spray solution mixed with a certain concentration of nitric acid and methanol according to the volume ratio of 1:3, controls the double spray voltage between 18 and 22V, and the double spray temperature between 5°C and 10°C. The samples were thinned on an electrolytic thinning machine. Appropriate selection of double-spray liquid, double-spray voltage and double-spray temperature makes the surface of the sample bright, reduces the potential difference between the second phase and the matrix, effectively avoids the appearance of sieve holes, and realizes uniform thinning. The thinning effect is achieved in 10-20s, which greatly improves the efficiency, and there is no stress and heat input during the thinning process, providing a fast and reliable sample preparation method. The invention can conveniently and simply prepare transmission samples with no sieve hole and larger thin area, which has important reference significance for the preparation of transmission samples of metal materials containing coarse second phases.

The invention provides a liquid crystal display panel processing method. The method comprises the steps that a liquid display panel is provided, the liquid display panel comprises a thin film transistor array substrate, a color film substrate and a liquid crystal layer clamped between the thin film transistor array substrate and the color film substrate, and pits exist on surfaces, facing away from the liquid crystal layer, of the thin film transistor array substrate and the color film substrate; an organic silicon resin film layer or a silicon oxide film layer is formed respectively on the surfaces, facing away from the liquid crystal layer, of the thin film transistor array substrate and the color film substrate to fill the existed pits on the two substrates of the liquid crystal displaypanel to obtain a flattened liquid crystal display panel; thinning treatment is conducted on the flattened liquid crystal display panel. The existence of the organic silicon resin film layer or the silicon oxide film layer can fill the pits which might exist on the panel, and probability that the pits are deteriorated when the thinning treatment is conducted on the panel is reduced to improve display quality of the panel.