32results about How to "Uniform thinning" patented technology

The invention provides an Au@Pt core-shell structure nano electrode, a preparing method and application of the Au@Pt core-shell structure nano electrode. Compared with the prior art, the method for preparing a gold nano disk electrode is simple, the size can be controlled within the nano scale range, and the method can be used for preparing the gold nano disk electrode and is similarly applicable to nano disk electrodes of other metals. Meanwhile, about the technology for preparing the gold nano disk electrode, the Au@Pt core-shell structure nano electrode is obtained through etching and under potential deposition, very good electro-catalysis activity is achieved for hydrogen peroxide, the prepared Au@Pt core-shell structure nano electrode has very good response to the redox reaction for hydrogen peroxide catalysis, the current is obviously increased along with increasing of the concentration of hydrogen peroxide, and a linear relation between hydrogen peroxide concentration and current signals is constructed; and accordingly the concentration of the hydrogen peroxide solution is detected.

The invention provides a high-melt-strength styrene resin composition. The composition comprises, by weight, styrene resin or styrene alloy, a tackifier, an antioxidant and a lubricant. Compared withthe prior art, the composition has the advantages that a random copolymer serving as the tackifier, the styrene resin and the styrene alloy are thermally compatible, phase separation is avoided, andthe mechanical property is excellent; the molecular weight of the random copolymer serving as the tackifier is moderate, and the random copolymer can be plasticized more easily compared with rubber powder, high-molecular-weight SAN powder, heat-resistant powder and the like, so that the processing performance is better, the thickness is uniform, the shrinkage rate is low, and surface defects are not likely to be generated.

The invention discloses a process method for treating and thinning a middle-high voltage anode aluminum foil. The method comprises the steps of pretreatment, first-stage hole forming corrosion, middle treatment corrosion, second-stage hole expanding corrosion, post-treatment and the like, and comprises the following steps: soaking aluminum foil in a mixed solution of hydrochloric acid and sulfuric acid, applying current to the mixed solution of hydrochloric acid and sulfuric acid to carry out direct-current hole-forming corrosion and carry out first-stage direct-current hole-forming corrosion, soaking the aluminum foil in a mixed solution of silicon hydrofluoric acid and phosphoric acid, then applying current to the aluminum foil in a nitric acid solution to carry out second-stage direct-current hole-forming corrosion, repeating the processes of intermediate treatment corrosion and second-stage hole-forming corrosion many times, soaking the aluminum foil in the nitric acid solution for post-treatment, finally cleaning the aluminum foil with tap water, cleaning the aluminum foil with pure water, and then drying and rolling the aluminum foil to obtain the corroded foil. The method can effectively remove the porous layer on the surface of the finished corrosion foil, reduces the residual thickness of the corrosion foil, does not reduce the specific volume, and improves the specific volume of the corrosion foil in unit thickness.

The invention provides a high-melt-strength styrenic resin composition, which comprises the following components proportioned in certain parts by weight: styrenic resin or styrenic alloy, tackifier, antioxidant, lubricating agent agent. Compared with the prior art, the present invention has the following beneficial effects: 1, as the random copolymer of tackifier in the present invention, has thermodynamic compatibility with styrene resin and its alloy, phase separation does not take place, mechanical Excellent performance; 2. The molecular weight of the random copolymer used as a tackifier in the present invention is moderate, and it is easier to plasticize than resins such as rubber powder, high molecular weight SAN powder, heat-resistant powder, etc., so it has better processability, thickness Uniform, low shrinkage, not easy to produce surface defects.

The invention discloses an organic light emitting diode (OLED) panel thinning device, system and method. The OLED panel thinning device mainly comprises a rotary machine frame, a fluid guide tube and a rotary machine frame cavity, wherein the rotary machine frame is fixedly installed in the rotary machine frame cavity, and a port of the fluid guide tube is located right above the central position of the rotary machine frame. A principle is that etching liquid evenly diffuses from the center of an OLED panel to the outside by utilizing centrifugal force produced by the rotary machine frame in rotation, and then etching and thinning of the OLED panel are achieved. The invention further discloses the OLED panel thinning method based on the OLED panel thinning device. The OLED panel thinning device and method overcomes the shortcoming that the etching liquid for immersion-type thinning is polluted and accordingly the thinning quality is reduced, and meanwhile overcomes the problem that concave spots are easily formed and the etching thickness is uneven and the like in the spraying-type thinning.

The invention relates to a method for manufacturing aluminum wiring, comprising the following steps of: executing a first etching process on aluminum wiring, wherein the first etching process is a reactive ion etching process without applying bias voltage; after the first etching process is executed, executing a second etching process on the aluminum wiring to form an aluminum wiring diagram, wherein the second etching process is a reactive ion etching process applying the bias voltage. The method for manufacturing aluminum wiring remedies the etching defect that the aluminum wiring is not etched through due to the etch rate difference when the aluminum wiring diagram is formed by etching, thereby avoiding the influence on the quality of finally formed semiconductor devices due to the etching defect.

The invention belongs to the technical field of monocrystalline silicon cell production, and especially relates to silicon chip thinning equipment for the monocrystalline silicon cell production technology. A to-be-solved technical problem is to provide the silicon chip thinning equipment which is high in thinning speed, is simple in operation and is uniform in reduced thickness. In order to solve the above problem, the invention provides the silicon chip thinning equipment, and the silicon chip thinning equipment comprises a first rotating shaft, a worm gear, a flat belt, a second rotating shaft, a first bearing seat, a big belt pulley, a gear, a first installation seat, a rack, a sliding block, a sliding rail, and a right frame. The right end of the top of the bottom plate is provided with the right frame through welding, and the upper part of the left side of the right frame is connected with a sliding rail in a mode of bolt connection. The equipment is quick in thinning speed, is simple in operation, is uniform in thinning thickness, plays an important role in thinning, also improves the work efficiency, and is high in safety.

The invention relates to a meteorological balloon and a production method thereof. The meteorological balloon has the quality of 700g to 800g, the length of a balloon body is 205 cm to 255 cm, and a balloon handle has a width of 9 cm to 10 cm and a length of 10 cm to 14 cm. The meteorological balloon comprises a solid raw material, an oil raw material and a colloid raw material, wherein the solid raw material comprises the ingredients by weight ratio: 100 parts of centrifugal concentrated natural latex, 0 part to 0.30 part of potassium hydroxide, 0 part to 0.15 part of casein, 0 part to 0.10 part of leveling agent O, 1.00 part to 3 parts of sulfur, 1.00 part to 2 parts of antioxidant D, 1.00 part to 2 parts of 4010NA, 1.50 parts to 3 parts of rubber accelerator PX and 0.20 part to 5 parts of zinc oxide; the oil raw material comprises 7.00 parts to 10.0 parts of mechanical oil by weight ratio; and the colloid raw material comprises neoprene latex which is added by the mixed weight ratio of the mixture of the solid raw material and the oil raw material to the neoprene latex, namely 1 to 10. The neoprene latex is added in a raw material formulation so as to improve the anti-aging performance and the whole processing performance of the meteorological balloon, ensure the streamlined appearance of the meteorological balloon, improve the evenness degree of a balloon surface and enable the balloon surface to swell evenly in the discharge process.

The invention relates to a silicon wafer thinning device, in particular to a rapid silicon wafer thinning device for a solar cell production technology, and aims to provide a rapid silicon wafer thinning device which is used for the solar cell production technology and is high in thinning speed, simple to operate and uniform in thinning thickness. The rapid silicon wafer thinning device comprises a bottom plate, a bearing block, a sliding block, a sliding rail, a left frame, a swing rod, a lifting rod, a guiding sleeve, a mounting seat, a motor, springs, a moving frame, a cam, a top plate, an L-shaped connecting rod, an arc-shaped net plate, a processing frame, an electric control valve, a liquid outlet pipe, a rack, a gear and a rotating shaft, wherein the left frame, the sliding rail and the bearing block are arranged at the top of the bottom plate sequentially from left to right; the sliding block is glidingly connected onto the sliding rail; and the rack is arranged on the sliding block. The device has the effects of being high in thinning speed, simple to operate and uniform in thinning thickness.

A method for manufacturing a semiconductor device which enables favorable back-surface grinding of a semiconductor substrate with preventing a warp in the substrate, thereby manufacturing a thickness-reduced semiconductor device. A projection electrode is formed on a surface of a wafer. A resin layer is formed on the wafer surface to a thickness to bury a top of the projection electrode. A cut groove is formed in the resin layer along a scribe line formed on the wafer. Thereafter, grinding is made on a back surface of the wafer by the use of a grinder or the like. A surface portion of the resin layer is removed by etching or the like, to expose the top of the projection electrode. The wafer is cut along the cut groove to obtain individual semiconductor chip pieces.

The invention discloses a method for thinning a FeNi alloy foil tape through chemical etching. The method comprises the following steps of: pretreating a FeNi alloy thin plate, uniformly spraying an etching solution on the FeNi alloy thin plate to etch and thin the FeNi alloy thin plate to form an FeNi alloy foil tape, and post-treating the FeNi alloy foil tape, wherein the etching solution is prepared from FeCl3, HCl and water. The method is simple and easy to operate, the thickness of the FeNi alloy thin plate can be further rapidly and uniformly reduced, a rolled hardened layer on the surface of the FeNi alloy thin plate can be further removed, and the internal plastic strain and residual stress of the FeNi alloy thin plate can be reduced, so that deformation during etching and material reduction is inhibited, the flexibility of the FeNi alloy foil tape is effectively improved, the yield of mask manufacturing is remarkably improved, and post-treatment does not need. The method is suitable for FeNi alloy thin plates with various components, sizes and thicknesses, and the obtained FeNi alloy foil strip is uniform in thickness and low in surface roughness.

The invention discloses a laser thinning method. The laser thinning method comprises the following steps: fixing the workpiece to be processed; controlling the laser to irradiate the surface of the workpiece to be processed; The moving speed on the surface of the workpiece relative to the surface of the workpiece to be processed determines the thinning operation parameters of the workpiece to be processed; according to the thinning operation parameters, the laser is controlled to move on the surface of the workpiece to be processed to complete the workpiece to be processed. Thinning operations for machining workpieces. The invention also discloses a laser machine. The invention ensures that the surface smoothness of the workpiece to be processed is better after the thinning process.

The invention belongs to the technical field of nonvolatile memory devices, and particularly relates to an erasable film RRAM (resistive random access memory) memory unit. The memory unit is characterized in that a piece of flexible and bendable printing ink color printing paper is used as a substrate, a tin oxide film is used as a variable-resistance layer, and a molybdenum oxide film is used as an oxygen storage layer; and a specific structure comprises the printing ink color printing paper substrate, a metallic nickel film serving as a bottom electrode, the tin oxide film, the molybdenum oxide film and a metallic molybdenum film serving as a top electrode in sequence. According to the invention, a direct current magnetron sputtering technology is used at the low temperature (subzero 100 DEG C), and the metallic nickel film, the tin oxide film, the molybdenum oxide film and the metallic molybdenum film are prepared on the substrate sequentially. The variable-resistance memory unit prepared by the invention has the characteristics of good bending durability and the like, and has a wide application prospect in the fields of nonvolatile memory and flexible electron devices.

The invention discloses a method for preparing a 2xxx series aluminum alloy transmission electron microscope sample, and belongs to the technical field of transmission electron microscope sample preparation. The method selects a double spray solution mixed with a certain concentration of nitric acid and methanol according to the volume ratio of 1:3, controls the double spray voltage between 18 and 22V, and the double spray temperature between 5°C and 10°C. The samples were thinned on an electrolytic thinning machine. Appropriate selection of double-spray liquid, double-spray voltage and double-spray temperature makes the surface of the sample bright, reduces the potential difference between the second phase and the matrix, effectively avoids the appearance of sieve holes, and realizes uniform thinning. The thinning effect is achieved in 10-20s, which greatly improves the efficiency, and there is no stress and heat input during the thinning process, providing a fast and reliable sample preparation method. The invention can conveniently and simply prepare transmission samples with no sieve hole and larger thin area, which has important reference significance for the preparation of transmission samples of metal materials containing coarse second phases.

The invention discloses a method and a device for uniformly thinning a large-scale irregular busbar-shaped shell. The invention completes a certain aluminum alloy dry cutting process by generating a programmable uniform thinning model, combining with the change rule of the curvature of the blank, and using the segmented and layered turning methods; design and directly add a set of shell blanks on the numerical control equipment The uniform thinning processing device system can meet the uniform thinning processing of blanks in forming methods such as spinning / casting, meet the requirements of segmented and layered turning processes, meet the requirements of large-end rigid clamping processes, and solve the problem of spindle runout during turning. The resulting errors can be compensated for precision, and the parts can be uniformly thinned. It can replace the problems of low efficiency and heavy pollution such as the use of chemical milling after the parts are spinned to remove heat treatment deformation, and meet the weight and precision requirements.

The invention provides a liquid crystal display panel processing method. The method comprises the steps that a liquid display panel is provided, the liquid display panel comprises a thin film transistor array substrate, a color film substrate and a liquid crystal layer clamped between the thin film transistor array substrate and the color film substrate, and pits exist on surfaces, facing away from the liquid crystal layer, of the thin film transistor array substrate and the color film substrate; an organic silicon resin film layer or a silicon oxide film layer is formed respectively on the surfaces, facing away from the liquid crystal layer, of the thin film transistor array substrate and the color film substrate to fill the existed pits on the two substrates of the liquid crystal displaypanel to obtain a flattened liquid crystal display panel; thinning treatment is conducted on the flattened liquid crystal display panel. The existence of the organic silicon resin film layer or the silicon oxide film layer can fill the pits which might exist on the panel, and probability that the pits are deteriorated when the thinning treatment is conducted on the panel is reduced to improve display quality of the panel.