4results about How to "Uniform corrosion" patented technology

The invention discloses a single-crystal magnesium alloy wire for acupoint catgut embedding and weight losing and a preparation method of the single-crystal magnesium alloy wire, the chemical composition expression of the single-crystal magnesium alloy wire is Mg-yM-zR, in the formula, y and z represent the mass fraction of M and the mass fraction of R in magnesium alloy respectively, y is larger than or equal to 1.2 and smaller than or equal to 1.7, z is larger than or equal to 0.3 and smaller than or equal to 0.8, and the balance is Mg; m is one of Sr, Ce and Co, and R is one of Ge, Sm and Dy; the wire is prepared through the processes of smelting and casting, homogenizing treatment, hot extrusion, multi-pass cold drawing, intermediate annealing and zone smelting and directional solidification, and has uniform and controllable degradation rate, excellent mechanical property and biocompatibility; after the catgut embedding slimming agent is embedded into the acupuncture point of a human body, fat metabolism is promoted through mild and lasting physical stimulation and chemical ion regulation, intergranular corrosion and premature fracture caused by a polycrystalline structure are avoided, and the safety and durability of a catgut embedding slimming therapy are improved.

The utility model provides a damper valve piece corrosion treatment device relates to damper valve piece corrosion treatment technical field, including bottom plate, the upper surface fixed connection treatment box of bottom plate, the upper surface fixed connection treatment box of bottom plate is provided with lifting assembly at both sides, be equipped with a plurality of placement assembly on lifting assembly, placement assembly includes placement board and conical column, placement board includes two branch and fixed ring, the utility model discloses a fixed ring and conical column are set up, and conical column is installed on the branch, and the valve piece enters the treatment box and handles, when the valve piece handles a period of time, and the fixed ring and branch continue to reduce, and the valve piece is covered on the conical column, and the fixed ring and branch are separated from the valve piece, and the area of the lower surface of valve piece loses the shelter, and the film liquid can carry out the corrosion treatment to the sheltered area of valve piece, make to the valve piece surface corrosion more uniform, reduce the shelter.

The application discloses a gradient detection method for uniform corrosion performance of ferritic stainless steel and belongs to the field of stainless steel corrosion performance detection. The method provides a gradient detection method for the problems that the standard method of GB4334.6-2015 cannot measure the uniform corrosion rate of 409, 430 and other ferritic stainless steel and the test time of the prior art is too long. The method comprises sample preparation, preparation of a basic corrosion medium, selection and adjustment of the gradient of the corrosion medium, corrosion test, treatment of the sample after corrosion and calculation of the uniform corrosion rate. By controlling the hydrogen ion concentration [H + ] to be 0.5-2.0 mol / L, the chloride ion concentration [Cl ‑ ] to be 0.5-2.0 mol / L and the molar ratio of [H + ] / [Cl ‑ ] to be 0.3-0.9, the uniform corrosion is ensured; a three-level gradient detection system of 'basic medium-concentration optimization-corrosion inhibitor assistance' is established, and universal detection of ferritic stainless steel with different corrosion resistance is realized. The test time of the method is only 0.5-1 h, which is 6-12 times more efficient than the prior art of 6 h, the technical blank of the uniform corrosion detection of ferritic stainless steel is filled, and the method has good reproducibility and stability.

The application relates to a silicon wafer fast transfer device after etching and a use method thereof. The device comprises an etching tank and a water tank located at one side of the etching tank. A power driving mechanism is arranged between the etching tank and the water tank. The power driving mechanism comprises a power output mechanism and a turnover swing box. The power output mechanism is drivingly connected with the turnover swing box through a transmission mechanism. The bottom of the turnover swing box is provided with a silicon wafer to be transferred. The power output mechanism drives the turnover movement of the silicon wafer to be transferred at the bottom of the turnover swing box through the transmission mechanism, and the silicon wafer to be transferred is transferred from the etching tank to the water tank. The device has the advantages of reasonable structure design, reliable and stable operation, etc. The silicon wafer can be fast transferred between tank bodies, the transfer time is within a specified range, and the silicon wafer can be cleaned in all directions.