1381 results about "Zn element" patented technology

A thin film transistor comprises a zinc-oxide-containing semiconductor material. Such transistors can further comprise spaced apart first and second contact means or electrodes in contact with said material. Further disclosed is a process for fabricating a thin film transistor device, wherein the substrate temperature is no more than 300° C. during fabrication.

An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

A 3D Printing Rapid Prototyping process using Al/Mg particles coated with a metal (i.e. copper, nickel, zinc, or tin) that (1) prevents oxidation of the Al/Mg particles, and (2) either alone, or when alloyed with the aluminum or magnesium core metal, melts below the liquidus temperature of the core.

There is provided a white light illumination system. The illumination system includes a radiation source which emits either ultra-violet (UV) or x-ray radiation. The illumination system also includes a luminescent material which absorbs the UV or x-ray radiation and emits the white light. The luminescent material has composition A_2−2xNa_1+xE_xD₂V₃O₁₂. A may be calcium, barium, strontium, or combinations of these three elements. E may be europium, dysprosium, samarium, thulium, or erbium, or combinations thereof. D may be magnesium or zinc, or combinations thereof. The value of x ranges from 0.01 to 0.3, inclusive.

A semiconductor light emitting device with improved efficiency in extracting light is provided. The semiconductor light emitting device comprises a first conductive type semiconductor layer, a light emitting layer, and a second conductive semiconductor layer stacked in this order, electrodes respectively connected to the first and second conductive semiconductor layers, the electrode connected to the second conductive type semiconductor layer comprising a lower conductive oxide film and an upper conductive oxide film disposed on the lower conductive oxide film, and a metal film disposed only on the upper conductive oxide film. The upper and lower conductive oxide films comprise an oxide including at least one element selected from the group consisting of zinc (Zn), indium (In), tin (Sn), and magnesium (Mg).

A solid-state metal-air electrochemical cell comprising: (A) a metal-containing electro-active anode; (B) an oxygen electro-active cathode; and (C) an ion-conducting glass electrolyte disposed between the metal-containing anode and the oxygen electro-active cathode. The cathode active material, which is oxygen gas, is not stored in the battery but rather fed from the environment. The oxygen cathode is preferably a composite carbon electrode which serves as the cathode current collector on which oxygen molecules are reduced during discharge of the battery to generate electric current. The glass electrolyte typically has an ion conductivity in the range of 5×10⁻⁵ to 2×10⁻³ S/cm. The electrolyte layer is preferably smaller than 10 μm in thickness and further preferably smaller than 1 μm. The anode metal is preferably lithium or lithium alloy, but may be selected from other elements such as sodium, magnesium, calcium, aluminum and zinc.

In an inverse-stagger MOSFET (1), a gate insulating layer (4) made of amorphous aluminum oxide is so formed as to face a channel layer (5) which serves as the semiconductor layer, and which is made of zinc oxide. With this arrangement, a defect level at an interface between the channel layer (5) and the gate insulating layer (4) is reduced, thereby obtaining performance equivalent to that of a semiconductor apparatus in which all the layered films are crystalline. This technique is applicable to a staggered MOSFET and the like, and has high versatility.

Electric characteristics and reliability of a thin film transistor are impaired by diffusion of an impurity element into a channel region. The present invention provides a thin film transistor in which aluminum atoms are unlikely to be diffused to an oxide semiconductor layer. A thin film transistor including an oxide semiconductor layer including indium, gallium, and zinc includes source or drain electrode layers in which first conductive layers including aluminum as a main component and second conductive layers including a high-melting-point metal material are stacked. An oxide semiconductor layer 113 is in contact with the second conductive layers and barrier layers including aluminum oxide as a main component, whereby diffusion of aluminum atoms to the oxide semiconductor layer is suppressed.

Metabolic energy capacity enhancing compositions and methods for reducing oxidative stress and improving vitality in a mammal are disclosed. A composition for increasing metabolic energy capacity may be in a palatable liquid formulation or a solid dosage form and typically includes an anti-oxidant containing phytonectar and an energy catalyst. An anti-oxidant may include a polyphenol, anthrocyanin, bioflavonoid, proanthocyanidin, and a xanthone. An energy catalyst may include a mineral, vitamin, co-vitamin, carbohydrate and a lipid. In a presently preferred embodiment a composition includes phytonectar extracts from grape, aloe vera, apple, morinda citrifolia, scullcap, blueberry, prune, cranberry, elderberry, bilberry, and gentain and a mineral blend containing calcium, magnesium, manganese, zinc, chromium, selenium, iron, copper, molybdenum, vanadium, potassium, iodine, and cobalt. A method for increasing metabolic energy capacity in a mammal may include consuming a chemical component having the ability to undergo oxidation, producing free radicals and administering a composition having an anti-oxidant containing phytonectar and an energy catalyst.

This invention discloses materials for positive electrodes of secondary batteries and their methods of fabrication. Said materials comprise of granules of an active material for positive electrodes coated with an oxide layer. The active material is one or more of the following: oxides of lithium cobalt, oxides of lithium nickel cobalt, oxides of lithium nickel cobalt manganese, oxides of lithium manganese, LiCoO₂, LiNi_1-xCo_xO₂, LiNi_1/3Co_1/3Mn_1/3O₂, and LiMn₂O₄. The non-oxygen component in the oxide layer is one or more of the following: aluminum, magnesium, zinc, calcium, barium, strontium, lanthanum, cerium, vanadium, titanium, tin, silicon, boron, Al, Mg, Zn, Ca, Ba, Sr, La, Ce, V, Ti, Sn, Si, and B. Said non-oxygen component of the granules is between 0.01 wt. % to 10 wt. % of said granules of active material. The methods of fabrication for said materials includes the steps of mixing an additive and an active material for positive electrodes uniformly in water or solvent, evaporating said solvent or water, and heat treating the remaining mixture at 300° C. to 900° C. for between 1 hour to 20 hours. The additive is a compound of one or more of the following elements: aluminum, magnesium, zinc, calcium, barium, strontium, lanthanum, cerium, vanadium, titanium, tin, silicon, boron, Al, Mg, Zn, Ca, Ba, Sr, La, Ce, V, Ti, Sn, Si, and B where the element is between 0.01 wt. % to 10 wt. % of said active material. Using the materials of positive electrodes disclosed above or materials for positive electrodes fabricated in the methods disclosed above in batteries produces batteries with excellent cycling and high temperature properties.

A powder comprising silica-coated zinc oxide fine particles in which the surface of each particle is coated with silica, wherein large particles of 5 μm or more account for 0.1 mass % or less. A powder comprising surface-hydrophobicized silica-coated zinc oxide fine particles in which the silica-coated zinc oxide fine particles whose surfaces have been coated with silica are further treated with a hydrophobicity-imparting agent, wherein large particles of 5 μm or more account for 0.1 mass % or less.

The present invention relates to a surface-modified nanoscale zinc oxide, where the surface modification involves coating with an oligo- or polyethylene glycol acid. This surface-modified zinc oxide is characterized in that it forms stable dispersions in a liquid medium. In addition, the present invention relates to a process for the production of surface-modified zinc oxide, and also to a process for the production of nanoscale zinc oxide dispersions.

A microbicidal composition containing: (a) 1,2-benzisothiazolin-3-one; and (b) at least one microbicide selected from among benzalkonium chloride, benzethonium chloride, benzyl alcohol, caprylyl glycol, chlorphenesin, 2,2′-dithiobis(N-methylbenzamide), diazolidinyl urea, ethylenediamine tetraacetic acid, ethylparaben, imidazolidinyl urea, methylparaben, phenoxyethanol, linoleamidopropyl PG-dimonium chloride phosphate, cocamidopropyl PG-dimonium chloride phosphate, propylparaben, cis-1-(3-chloroallyl)-3,5,7-triaza-1-azoniaadamantane chloride, dehydroacetic acid or its salts, benzoic acid or its salts, sodium hydroxymethylglycinate and zinc pyrithione.

Compositions and assay methods for and relating to the detection of glycated hemoglobin are provided. In particular, the presence and level of glycated hemoglobin can be detected in a blood sample. The compositions comprise microparticles which have zinc coating for use in the improved binding of proteins exhibiting a zinc binding domain, in particular glycated hemoglobin.

A semiconductor light emitting element includes an conductive oxide film containing at least one element selected from the group consisting of zinc, indium, tin, and magnesium that is electrically connected to the semiconductor layer. The conductive oxide film includes a plurality of voids in the vicinity of the interface with the semiconductor layer.

A coated article is provided which may be heat treated (e.g., thermally tempered) and/or heat bent in certain example instances. In certain example embodiments, a zinc stannate based layer is provided between a tin oxide based layer and a silicon nitride based layer, and this has been found to significantly reduce undesirable mottling damage upon heat treatment/bending. This results in significantly improved bendability of the coated article in applications such as vehicle windshields and the like.

A coated article is provided that may be heat treated in certain example embodiments. A coating of the coated article includes a tin oxide inclusive layer, a silicon nitride inclusive layer and/or a zinc oxide inclusive layer located under an infrared (IR) reflecting layer of a material such as silver. It has been found that this may result in improved thermal stability upon heat treatment, higher visible transmission, desirable coloration, lower sheet resistance (R_s), and/or lower emissivity in certain example embodiments of this invention. In certain embodiments, a zinc oxide inclusive layer may be provided above a contact layer over the IR reflecting layer, again for improving thermal stability, coloration, sheet resistance and/or visible transmission.

An organic electroluminescence device includes: an anode; a cathode opposed to the anode; and a plurality of emitting units including at least a first emitting unit and a second emitting unit. The plurality of emitting units each includes: an emitting layer; and an intermediate unit between the first emitting unit and the second emitting unit. The intermediate unit includes an electron injecting layer, a zinc oxide layer and a hole injecting layer in this sequence from the anode. The electron injecting layer contains an electron donating material and is adjacent to the first emitting unit. The hole injecting layer contains an organic electron accepting material and is adjacent to the second emitting unit.

A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrates. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.

The present invention provides a novel method for producing a compound represented by formula (III) shown below, which comprises treating a compound represented by formula (I) shown below with a trivalent chromium compound and at least one kind of metal selected from the group consisting of manganese and zinc in a solvent in the presence of a ligand represented by formula (II) shown below, and the present invention further provides the novel compound represented by formula (I).