The invention relates to the technical field of semiconductor device manufacturing, and concretely relates to a wide-band gap III-V CMOS (Complementary Metal-Oxide-Semiconductor Transistor) strain field effect transistor which is based on a silicon substrate and combines an n channel transistor and a p channel transistor. The wide-band gap III-V CMOS strain field effect transistor adopts MOCVD or MBE equipment for epitaxial growth, and is formed by a first multilayer lattice strain buffer layer, a GaSb channel layer, an AlGaSb barrier layer, a GaSb cap layer, a second multilayer lattice strain buffer layer, an In0.53Ga0.47As channel layer, an In0.52Al0.48As barrier layer and an In0.53Ga0.47As cap layer sequentially epitaxial grown on the silicon substrate. According to the wide-band gap III-V CMOS strain field effect transistor provided by the invention, the migration rate of the p channel transistor can be effectively improved, the problem that the migration rate of the n channel transistor and the migration rate of the p channel transistor in III-V are different is solved, a wide-band gap III-V family transistor channel with high carrier speed and high drive current is provided, a short-channel effect brought during a transistor equal scaling-down process is effectively improved, the power consumption is reduced, the Moore law is overcome, the limitation is broken, and an equal scaling-down process of a semiconductor industry is maintained.