The
wafer electroplating equipment comprises an equipment main body, an
electroplating box body is arranged in the equipment main body, a pre-cleaning tank, an
electroplating tank and a QDR tank are arranged in the electroplating box body, the pre-cleaning tank is located on one side of the electroplating tank, the QDR tank is located on the other side of the electroplating tank, a
drying box is arranged on the front portion of the upper end of the QDR tank, and the
drying box is arranged on the front portion of the upper end of the QDR tank. And an
electromagnetic valve box is installed at the rear end of the electroplating box body, and air draft adjusting plates are installed at the positions, located in the electroplating tank and the QDR tank, of the interior of the electroplating box body. According to the
wafer electroplating equipment disclosed by the invention, DIW deionized water is uniformly sprayed out from the
nozzle to fully wet a
wafer, then the wafer is placed in the electroplating bath, the electroplating bath adopts a
platinum titanium mesh as an
anode, power line distribution in the electroplating process is improved, the uniformity of a plating layer is further improved, and the wafer electroplating clamp adopts a latest compression structure, so that the wafer electroplating equipment has the advantages that the production cost is reduced, and the production efficiency is improved. Therefore, the
air tightness of the wafer electroplating clamp is better, and the liquid leakage phenomenon of the wafer electroplating clamp in the prior art is solved.