Quartz ceramic crucible for polycrystalline silicon ingot and preparation method thereof

A technology of quartz ceramics and polysilicon, which is applied in the growth of polycrystalline materials, chemical instruments and methods, crystal growth, etc., can solve the problems of high cost and pollution limitation in the preparation process, and achieve the improvement of minority carrier lifetime, high purity, and good barrier protection effect Effect

Active Publication Date: 2017-06-06
江西中材新材料有限公司 +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For this reason, the industry has used ultra-high-purity raw materials to prepare crucibles to solve the problem. However, due to the pollution limitation and high cost of the preparation process, it is difficult to promote. Therefore, how to solve this problem requires a breakthrough in crucible technology.

Method used

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  • Quartz ceramic crucible for polycrystalline silicon ingot and preparation method thereof
  • Quartz ceramic crucible for polycrystalline silicon ingot and preparation method thereof
  • Quartz ceramic crucible for polycrystalline silicon ingot and preparation method thereof

Examples

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Effect test

Embodiment 1

[0047] A preparation method of a quartz ceramic crucible for polycrystalline silicon ingots, comprising the following steps:

[0048] (1) Slurry preparation

[0049] Take 1kg of fused silica with a purity of 99.98%, add 250g of low temperature quartz with a particle size range of 350 microns and a purity of 99.99%, then add 315g of silica sol, 200g of silicon nitride, 1.5kg of deionized water and 10g of a mass concentration of 1% The barium hydroxide aqueous solution is ground in a vertical stirring mill after mixing evenly, using zirconia balls as the grinding medium, and the ratio of material to ball is 1:5, and the median particle size obtained is a slurry of 25 μm;

[0050] (2) Crucible pretreatment

[0051] Take the crucible body, the crucible body includes a base and a side wall extending upward from the base; carry out water absorption pretreatment on the inner surface of the base of the crucible body and the four side walls, and control the roughness of the inner surf...

Embodiment 2

[0057] A preparation method of a quartz ceramic crucible for polycrystalline silicon ingots, comprising the following steps:

[0058] (1) Slurry preparation

[0059] Take 1 kg of low-temperature quartz with a purity of 99.995%, add 500 g of fused silica with a particle size range of 500 microns and a purity of 99.99%, add 0.8 kg of polyvinyl alcohol and 1 kg of deionized water, mix well, and grind in a roller ball mill. Zirconia and corundum balls are used as grinding media, the ratio of material to ball is 1:2, the grinding time is 30 hours, and a fine slurry with a median particle size of 1 μm is obtained through grinding;

[0060] Then mix 500g of low-temperature quartz, 500g of fused silica, and 200g of silicon powder into the slurry in the previous step, use silicon nitride balls as the grinding medium, the ratio of material to ball is 1:5, and the grinding time is 30 hours, and the median particle size is 40 μm after grinding. of slurry.

[0061] (2) Crucible pretreatm...

Embodiment 3

[0067] A preparation method of a quartz ceramic crucible for polycrystalline silicon ingots, comprising the following steps:

[0068] (1) Slurry preparation

[0069] Get 1kg of fused silica with a purity of 99.98%, add 250g of low-temperature quartz with a particle size range of 350 microns and a purity of 99.99%, then add 315g of silica sol and 1.5kg of deionized water, mix them evenly, and grind them in a vertical stirring mill. Zirconia balls are used as the grinding medium, and the material-to-ball ratio is 1:5 to obtain a slurry with a median particle size of 25 μm;

[0070] (2) Crucible pretreatment

[0071] Take the crucible body, the crucible body includes a base and a side wall extending upward from the base; carry out water absorption pretreatment on the inner surface of the base of the crucible body and the four side walls, and control the roughness of the inner surface of the crucible at 10 μm, Water absorption is controlled at 3%;

[0072] (3) Coating preparati...

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Abstract

The invention provides a quartz ceramic crucible for a polycrystalline silicon ingot. The quartz ceramic crucible comprises a crucible body, wherein the crucible body comprises a base and a side wall extending upward from the base, wherein a high-purity quartz coating is arranged on the inner surface of the inner surface and/or side wall of the base; and the material of the high-purity quartz coating comprises fused quartz, low-temperature quartz, silicon nitride and silicon in a mass ratio of 1:(0.1-2):(0-0.5):(0-0.5), 0-1000ppm of barium hydroxide and zirconium oxide by mass and less than or equal to 25% of adhesive by mass. In the crucible, the inner surface of the crucible body is coated with a high-purity quartz coating which is finally transformed into a high-density coating in an ingot casting process, thus impurities in the crucible are effectively prevented from dispersing into the ingot, red areas on the side and bottom of the ingot are reduced, overall ingot quality is improved, and the crucible preparation cost is lowered. The invention also provides a preparation method of the quartz ceramic crucible for a polycrystalline silicon ingot.

Description

technical field [0001] The invention relates to the field of crystalline silicon preparation, in particular to a quartz ceramic crucible for polycrystalline silicon ingots and a preparation method thereof. Background technique [0002] The traditional ingot polysilicon preparation technology mainly adopts the melting and solidification method, that is, the silicon material is filled in a crucible, and the silicon material is completely melted at high temperature, and then re-solidified and crystallized to form polysilicon. Due to the direct contact between the silicon material and the crucible, various impurities are inevitably introduced due to diffusion and reaction, resulting in a decrease in the minority carrier life of the silicon wafer, and even red areas of silicon ingots and black edges of cells, which seriously affect product quality. [0003] According to the research, the black edge in the red zone that affects the quality of silicon wafers mainly comes from the c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06C04B28/24C04B26/04
CPCC04B26/04C04B28/24C30B28/06C30B29/06C04B14/06C04B14/328C04B22/064
Inventor 刘兵习小青贾建广陶能松孔令珂周华
Owner 江西中材新材料有限公司
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