Ceramic substrate and manufacturing method thereof
A ceramic substrate and ceramic technology, applied in the field of ceramic substrates, can solve the problems of warping or arching of film layers or components, component failure, rough surface, etc., and achieve the effect of reducing surface roughness and alleviating residual stress.
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Embodiment 1
[0041] According to the ingredients and compositions shown in Table 2, planar buffer layers 1-33 (thickness 20 μm) were prepared respectively.
[0042] Table 2
[0043] flat
[0044] 28
[0045] Flat Buffer Property Measurements
Embodiment 2
[0047] For the flat buffer layer 1-33 prepared in Example 1, measure its softening temperature and its coefficient of thermal expansion (CTE) in the temperature range between 20°C and 300°C, please refer to Table 3:
[0048] table 3
[0049] flat buffer layer
Softening temperature (℃)
Coefficient of thermal expansion (10 -6 / °C)
1
897
2.9
2
925
3.1
3
827
4.4
4
741
3.8
5
866
5.8
6
875
5.4
7
906
4.3
8
892
5.1
9
800
5.3
10
861
1.8
11
894
3.7
12
732
2.8
[0050] 13
736
4.2
14
822
4.3
15
840
4.2
16
725
3.6
17
718
4.0
18
736
3.9
19
736
3.8
20
876
5.2
21
861
3.7
22
828
...
Embodiment 3
[0054] Take a ceramic substrate as the ceramic body of the subsequent ceramic substrate. Please refer to Table 4 for the properties of the ceramic substrate used:
[0055] Table 4
[0056] ingredients
Ra(nm)
CTE(10 -6 / °C)
Warpage(%)
Al 2 o 3 (ceramic body A)
288.3
8
0.15
Mullite (ceramic host B)
447.6
4
0.21
[0057] Next, according to the flat buffer layer compositions 1, 5, 7, 10, 16, 21, 26, 32, and 33 described in Table 1, a flat buffer layer is formed on the ceramic body A or B to obtain the ceramic substrate 1- 10. Finally, the average surface roughness (Ra) and warpage (warpage) of the ceramic substrates 1-10 were measured. Please refer to Table 5 for the results.
[0058] table 5
[0059] ingredients
Ra(nm)
CTE(10 -6 / °C)
Warpage(%)
Ceramic Substrate 1
(ceramic body B & flat buffer layer 1)
13.6
1.1
0.28
Ceramic Substrate 2
...
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