Provided is a method of manufacturing a
gas barrier film in which, in a case where a film is continuously formed on an elongated support through RtoR,
abnormal discharge can be suppressed, and a
gas barrier film having high
gas barrier performance can be stably prepared. There is provided a method of manufacturing a gas barrier film, the method including: forming an
inorganic layer on an elongated support or on an underlying
organic layer on the support while transporting the support in a longitudinal direction, in which a
plasma is generated by supplying
raw material gas between the support and a conductor
electrode having a porous structure that is disposed to face the support, and the
inorganic layer is formed using a
plasma chemical vapor deposition method, and before a main film forming step of forming the
inorganic layer on the support or on the underlying
organic layer on the support, a preliminary film forming step is provided, the preliminary film forming step being a step of forming an insulating inorganic layer having a lower density than the inorganic layer on a surface of the conductor
electrode by setting power that is applied to the conductor
electrode to be lower than power in the main film forming step while continuing the supply of the
raw material gas and the application of the power until the main film forming step.