Wide-band gap III-V CMOS (Complementary Metal-Oxide-Semiconductor Transistor) strain field effect transistor

Abstract

The invention relates to the technical field of semiconductor device manufacturing, and concretely relates to a wide-band gap III-V CMOS (Complementary Metal-Oxide-Semiconductor Transistor) strain field effect transistor which is based on a silicon substrate and combines an n channel transistor and a p channel transistor. The wide-band gap III-V CMOS strain field effect transistor adopts MOCVD or MBE equipment for epitaxial growth, and is formed by a first multilayer lattice strain buffer layer, a GaSb channel layer, an AlGaSb barrier layer, a GaSb cap layer, a second multilayer lattice strain buffer layer, an In0.53Ga0.47As channel layer, an In0.52Al0.48As barrier layer and an In0.53Ga0.47As cap layer sequentially epitaxial grown on the silicon substrate. According to the wide-band gap III-V CMOS strain field effect transistor provided by the invention, the migration rate of the p channel transistor can be effectively improved, the problem that the migration rate of the n channel transistor and the migration rate of the p channel transistor in III-V are different is solved, a wide-band gap III-V family transistor channel with high carrier speed and high drive current is provided, a short-channel effect brought during a transistor equal scaling-down process is effectively improved, the power consumption is reduced, the Moore law is overcome, the limitation is broken, and an equal scaling-down process of a semiconductor industry is maintained.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device manufacturing, and in particular relates to a wide bandgap III-V CMOS strain field effect transistor. Background technique [0002] According to Moore's Law, "the number of components that can be accommodated on an integrated circuit will double every 18-24 months, and the performance will also double." Generally speaking, if ICs of the same specification are produced under the same area of ​​wafers, with the advancement of process technology, the output of ICs can be doubled every one and a half years. Converted to cost, that is, every other year The half cost can be reduced by 50%, and the average annual cost can be reduced by more than 30%. According to the extension of Moore's Law, IC technology advances a generation every one and a half years. International semiconductor manufacturers basically follow this law. [0003] However, Intel, the largest chip manufacturer in the worl...

AI Technical Summary

Problems solved by technology

[0006] The object of the present invention is to provide a wide bandgap III-V CMOS strain field effect transistor, which can well solve the problem that the power consumption of existing transistors is difficult to reduce and the short channel effect is difficult to overcome in the process of scaling down. question

Images