Manufacturing method of metal-oxide-semiconductor field effect transistor (MOSFET)

Abstract

The invention provides a manufacturing method of a metal-oxide-semiconductor field effect transistor (MOSFET), comprising the following steps: manufacturing a hard mask on the surface of a silicon substrate on a source region and a drain region before a conductive channel is formed, and carrying out ion implantation at twice from different angles by using the hard mask as a shield in the process for forming the conductive channel through ion implantation to form a nonuniform conductive channel, thus, the doping concentration of the part of the conductive channel near the edge of the drain region is reduced on the premise that the whole doping concentration of the nonuniform conductive channel is not remarkably changed, on the one hand, the short channel effect of the MOSFET is prevented from increasing, and on the other hand, the band-gap tunneling effect and drain leakage current are reduced, shutdown current is reduced, and the service life of the MOSFET device is prolonged.

Description

technical field [0001] The invention relates to a semiconductor manufacturing method, in particular to a manufacturing method of a metal oxide semiconductor field effect transistor. Background technique [0002] Currently, metal-oxide-semiconductor field-effect transistor (MOSFET) device structures include: figure 1 As shown, the gate oxide layer 102 on the surface of the substrate 101, the gate 103 above the gate oxide layer 102, and the conductive channel 104 formed on the substrate surface below the gate oxide layer are respectively located in the substrate on both sides of the gate 103. A source 106 and a drain 107, and an oxynitride (silicon oxide and silicon nitride) spacer 105 (Spacer) surrounding the sidewall of the gate. On the one hand, the oxynitride spacer 105 can protect the gate 103, and on the other hand, it can prevent the source and drain implants forming the source 106 and the drain 107 from being too close to the conductive channel 104 to cause leakage cu...

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Problems solved by technology

In the prior art, if the overall doping concentration of the conductive channel 104 is uniformly reduced in the process of ion implantation to form the conductive channel, although the GIDL can be reduced, but because the overall

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