12 results about "Recombination current" patented technology

The invention provides a phosphorus emitter passivation structure and a preparation method thereof, the passivation structure comprises a phosphorus emitter, the phosphorus emitter comprises silicon, phosphorus, hydrogen, carbon and / or nitrogen, the surface of the phosphorus emitter is provided with a nano silicon oxide layer, the phosphorus emitter comprises an electric injection region and a doped region, the electric injection region is provided with a conductive layer at a corresponding position, and the doped region is provided with a conductive layer at a corresponding position. The conductive layer is used for being connected with a metal electrode, a passivation anti-reflection layer is arranged at the corresponding position of the doped region, and the carbon and / or nitrogen concentration of the electric injection region is higher than that of the electric injection region. Partitioned passivation is performed on the surface of the phosphorus emitter, and carbon and / or nitrogen atoms are introduced into the doped region, so that the interface passivation effect is improved; the electric injection region is not subjected to carbon and nitrogen doping and is not provided with a passive film, so that the influence of passivation on the contact resistivity is reduced; a conductive channel is introduced into the electric injection region for electric injection, so that the defect state of the phosphorus emitter can be further eliminated, and the recombination current is reduced.

This application discloses a method and apparatus for constructing a parallel current source model for IGBT turn-off current analysis. The main scheme is as follows: Based on the physical nature of the IGBT turn-off current decrease process, it is revealed that it includes two synchronously occurring sub-processes (the carrier injection process and the carrier recombination reduction process corresponding to MOSFET turn-off); the IGBT turn-off current is defined as the parallel superposition of the currents (injection current and recombination current) generated by these two sub-processes; this abstract "dual current" physical theory is transformed into an equivalent circuit composed of a controlled source and a current source connected in parallel; the two sub-processes are analyzed in this way: for the first sub-process, a first relationship characterizing the dynamic evolution law of the injection current is derived; for the second sub-process, a second relationship characterizing the dynamic evolution law of the recombination current is derived; finally, by combining these two relationships, a parallel current source model for quantitatively characterizing the IGBT turn-off current decrease process is constructed.

The application provides a TOPCon cell, which comprises a doped polysilicon layer; the doped polysilicon layer comprises a first doped polysilicon region and a second doped polysilicon alloy region; the first doped polysilicon region is selected from phosphorus-doped polysilicon; the second doped polysilicon alloy region is selected from phosphorus-doped polysilicon alloyed with at least one element selected from oxygen, carbon and nitrogen; the doping concentration of the first doped polysilicon region is not less than 1E20 cm ‑3 -3; the band gap of the second doped polysilicon alloy region is greater than that of the first doped polysilicon region, and the doping concentration of the second doped polysilicon alloy region is less than that of the first doped polysilicon region. The TOPCon cell structure provided by the application can ensure the thickness of the doped polysilicon in the metal contact region, avoid the destruction of the tunneling oxide layer in the slurry sintering process, reduce the recombination current and the contact resistance, and reduce the light parasitic absorption in the non-metal region, especially the free carrier absorption.

The application provides a TOPCon cell, comprising: a single crystal silicon wafer; an inner expansion layer arranged on the back surface of the single crystal silicon wafer; a doped polysilicon layer arranged below the inner expansion layer; the doped polysilicon layer comprises: a first doped polysilicon region and a second doped polysilicon region, the doping concentration of the first doped polysilicon region is higher than that of the second doped polysilicon region; the inner layer comprises: a first inner expansion region and a second inner expansion region, the position of the first inner expansion region corresponds to the position of the first doped polysilicon region, and the junction depth of the first inner expansion region is greater than that of the second inner expansion region. The TOPCon cell provided by the application has a specific structure, which can ensure the thickness and concentration of the doped polysilicon in the metal contact area, avoid the destruction of the tunneling oxide layer in the slurry sintering process, reduce the recombination current and the contact resistance, and at the same time, reduce the light parasitic absorption of the non-metal area, especially the free carrier absorption.

This invention discloses a P + -v-N + A novel mercury cadmium telluride mesa heterojunction infrared detector and its fabrication method, utilizing liquid-phase epitaxy to achieve P + -v material structure fabrication: N is prepared on the surface of the v-shaped layer using a back-implantation method. + After annealing, a three-layer hetero-doped material structure was fabricated, and P was then fabricated using device fabrication technology. + -v-N + This invention relates to a P-type mercury cadmium telluride mesa heterojunction detector. It utilizes the P-type wide-bandgap heterolayer growth process to achieve interfacial interdiffusion, reducing interface defect density and improving interface quality. Based on the ability to control raw material impurities above 7N and the self-purification characteristics of the growth process, it achieves stable control of low-concentration V-type layer impurities. Furthermore, it utilizes a high-resistivity transition layer formed by epitaxy and N-type metallurgical layer formed by boron ion implantation. + Layer; RTP fast annealing is used to repair injection damage. This invention can effectively suppress recombination current. Its surface heteromaterial forms a band modulation structure that suppresses tunneling current and surface leakage current. Compared with P-on-n devices, it can theoretically reduce dark current by two orders of magnitude and improve device performance.

This invention provides a TOPCon battery structure with two polycrystalline silicon layers and its fabrication method, relating to the field of battery processing technology. The TOPCon battery structure includes a monocrystalline silicon wafer, with a diffusion layer, a passivation layer, a front antireflection layer, and a front metal electrode sequentially disposed on the front side of the monocrystalline silicon wafer, and a tunneling layer, a doped polycrystalline silicon layer, a back antireflection layer, and a back metal electrode sequentially disposed on the back side of the monocrystalline silicon wafer. The doped polycrystalline silicon layer includes a first doped polycrystalline silicon layer located on the back side and a second doped polycrystalline silicon layer located between the back metal electrode and the first doped polycrystalline silicon layer, wherein the doping concentration of the second doped polycrystalline silicon layer is greater than that of the first doped polycrystalline silicon layer. This invention overcomes the shortcomings of existing technologies, ensuring the thickness of the doped polycrystalline silicon in the metal contact area, preventing damage to the tunneling oxide layer during sintering, and reducing recombination current and contact resistance; simultaneously, it reduces photoparasitic absorption in the non-metallic region, especially reducing free carrier absorption.

The application relates to the field of motor control technology in the smart grid industry, and a control circuit of a flywheel energy storage system involves various power electronic components such as semiconductor field effect tubes, and serves high-precision control of a motor; the application discloses a space vector control method for a twelve-phase permanent magnet synchronous motor flywheel energy storage system, which comprises the following steps: S1, twelve-phase space vector decoupling fault-tolerant control, S2, high-order harmonic energy recovery closed loop, S3, quantum annealing parameter optimization layer, S4, flux linkage self-adaptive observer network, and S5, 18-dimensional switching vector table construction. Through multi-reference coordinate system transformation and redundant phase reconstruction algorithm, the scheme realizes quick fault-tolerant response of the twelve-phase motor under single-phase or two-phase fault, dynamically recombines a current path under fault, combines a negative sequence current compensation loop, effectively suppresses torque pulsation, and through sliding window FFT real-time detection of a harmonic distortion rate and adjustment of a controller bandwidth under high-speed charging and discharging conditions, the problem of insufficient dynamic response of a traditional fault-tolerant strategy is solved.

This invention discloses a TOPCon battery and its fabrication method, belonging to the field of TOPCon battery technology. It includes a monocrystalline silicon wafer with a tunneling layer, a doped polycrystalline silicon layer, a back anti-reflection layer, and a back metal electrode sequentially disposed on its back side from the inside out. The doped polycrystalline silicon layer includes a first doped polycrystalline silicon region and a second doped polycrystalline silicon region. The first doped polycrystalline silicon region is in contact with the back metal electrode and is disposed on the surface of a groove. The tunneling oxide layer is relatively thin, and the inward junction depth is greater than that of the second doped polycrystalline silicon region. This effectively prevents electrode metal from penetrating into the junction region, reduces metal recombination current, and improves the battery's open-circuit voltage. Furthermore, the first doped polycrystalline silicon region has a larger contact area with the printing paste, reducing the battery's contact resistance. Simultaneously, the groove prevents the printing paste from widening outward, ensuring a high grid line aspect ratio, reducing grid line resistance, and thus improving the battery's fill factor.

The invention relates to a solar blind ultraviolet detector and a manufacturing method thereof. The solar blind ultraviolet detector sequentially comprises a back electrode, a P-type silicon carbide substrate, a first tunneling oxide layer, an i-type wide band gap material layer, a second tunneling oxide layer, an N-type gallium oxide layer and a surface electrode. The P-type silicon carbide substrate, the i-type wide band gap material layer and the N-type gallium oxide layer form a pin heterojunction, electrons and holes can be limited in the i-type wide band gap material layer, and carrier collection is facilitated. Moreover, the first tunneling oxide layer can effectively inhibit the interface state between the P-type silicon carbide substrate and the i-type wide bandgap material layer, and the second tunneling oxide layer can effectively inhibit the interface state between the i-type wide bandgap material layer and the N-type gallium oxide layer, thereby reducing the non-radiative recombination of carriers between the interfaces, and improving the performance of the device. The interface recombination current (the main source of the dark current) is significantly inhibited, the dark current is significantly reduced, and the detection sensitivity and the signal-to-noise ratio are improved.

This invention provides a P-type passivated contact structure and its preparation method. The P-type passivated contact structure includes a silicon substrate, a first silicon oxide layer, a first polycrystalline silicon layer, a second polycrystalline silicon layer, and a hydrogen-containing dielectric layer. The silicon substrate has a diffusion region near the surface of the first silicon oxide layer. The surface of the first silicon oxide layer near the first polycrystalline silicon layer has a native pinhole defect structure generated by plasma bombardment. The first polycrystalline silicon layer is made of carbon-doped boron-containing polycrystalline silicon, wherein the boron and carbon doping concentrations gradually increase away from the first silicon oxide layer, and the thickness is greater than or equal to 8 nm. The second polycrystalline silicon layer is also made of carbon-doped boron-containing polycrystalline silicon, with a thickness greater than 10 nm. The interfacial silicon oxide surface of this invention has a high density of pinhole defects, and using carbon-doped boron-containing amorphous silicon as the source layer can reduce oxide layer defects caused by interfacial boron enrichment, achieving excellent surface passivation and selective carrier collection, and reducing surface recombination current density.

The invention provides a boron emitter passivation structure and a preparation method thereof.The passivation structure comprises a boron emitter, the boron emitter comprises silicon, boron, carbon and hydrogen, a nano silicon oxide layer is arranged on the surface of the boron emitter, the boron emitter comprises an electric injection region and a doped region, a conductive layer is arranged at the corresponding position of the electric injection region, and the doped region is arranged on the surface of the nano silicon oxide layer. The conductive layer is used for being connected with a metal electrode, a passivation anti-reflection layer is arranged at the corresponding position of the doped region, and the carbon concentration of the doped region is higher than that of the electric injection region. According to the invention, a partitioned passivation technology is adopted, and carbon is introduced into the doped region of the boron emitter, so that an excellent passivation effect can be realized, and surface recombination is reduced; the electric injection region is not doped with carbon and is not provided with a passive film, so that the contact resistivity of the metal electrode is improved; a conductive channel is introduced into the electric injection region for electric injection, so that the defect state of the boron emitter can be further eliminated, and the recombination current is reduced.

The application discloses a solar cell, a preparation method of the solar cell, a laminated cell and a photovoltaic module, and belongs to the technical field of semiconductors. The solar cell comprises a semiconductor substrate and a first locally heavily doped semiconductor layer located on a main surface of the semiconductor substrate. The first locally heavily doped semiconductor layer has the same or opposite conductivity type as the semiconductor substrate, and the doping concentration of an edge region of the first locally heavily doped semiconductor layer is higher than that of a central region. The doping concentration of the first locally heavily doped semiconductor layer is optimized and designed, so that the doping concentration of the edge region is higher than that of the central region, thereby effectively inhibiting the serious carrier recombination phenomenon existing at the edge of the contact window of the locally doped semiconductor layer, fundamentally strengthening the field effect passivation ability of the edge, and effectively reducing the edge recombination current density to a very low level and improving the open circuit voltage and the fill factor of the cell.