Method for extracting gate-oxide thickness and substrate doping concentration of field effect transistor

Abstract

The invention provides a method for extracting gate oxide thickness and substrate doping concentration of a field effect transistor, which is characterized by comprising the following steps of: grounding a source electrode and a drain electrode of a device, connecting a substrate with smaller positive bias to enable a drain-body diode to be in positive bias and not conducted, scanning gate voltage from negative voltage to a positive voltage, measuring the relation curve of a generation-recombination current of the substrate and the gate voltage, and accurately extracting the gate oxide thickness and the substrate doping concentration of the field effect transistor by utilizing the position shift of the generation-recombination current peak of the positively-biased diode. In the method, a required measuring structure is simple and has high sensitivity and can be used for accurately reflecting the dependence of the gate oxide thickness on the substrate doping concentration.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits and relates to a method for extracting the gate oxide layer thickness and substrate doping concentration of a field effect transistor. Background technique [0002] The increasingly higher integration density and complexity of integrated circuits require a series of requirements for circuit design, such as high precision, short cycle time, low cost, and minimal design errors. As the interface between process and design, the key parameters of semiconductor devices are decisive to ensure the success of integrated circuit design. Because the traditional current-voltage or capacitance-voltage characteristics are easy to be affected by non-ideal factors when extracting key parameters of field effect transistors, the accuracy of parameter extraction is reduced. Contents of the invention [0003] The object of the present invention is to provide a method for extracting the gate oxide layer...

AI Technical Summary

Problems solved by technology

Due to the traditional current-voltage or capacitance-voltage characteristics when extracting key parameters of field effect transistors, it is easy to be affected by non-ideal factors and reduce the accuracy of parameter extraction

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