40 results about "Substrate doping" patented technology

A device formed from a method of fabricating a fine metal silicide layer having a uniform thickness regardless of substrate doping. A planar vacancy is created by the separation of an amorphousized surface layer of a silicon substrate from an insulating layer, a metal source enters the vacancy through a contact hole through the insulating layer connecting with the vacancy, and a heat treatment converts the metal in the vacancy into metal silicide. The separation is induced by converting the amorphous silicon into crystalline silicon.

A phonon-regulated indirect bandgap semiconductor material lateral electrical injection light-emitting device, comprising: a p-type or n-type indirect bandgap semiconductor material substrate; an n heavily doped layer made on one side of the substrate, the It is the source region of the device; a p heavily doped layer is made on the other side of the substrate, which is the drain region of the device; a negative electrode is made on the n heavily doped layer; a positive electrode is made on the p heavily doped layer; An active region is made in the middle of the substrate; a dielectric layer or an indirect band gap semiconductor material layer is made on the active region; a gate is made on the dielectric layer; a back electrode is made on the bottom of the substrate; The heavily doped layer, the p heavily doped layer and the active region are embedded with nanoscale silicon dioxide, silicon nitride, silicon oxynitride nanoparticles or nanoholes.

The invention relates to a power LDMOS device with a junction field plate, and belongs to the technical field of power semiconductor devices. According to the power LDMOS device with the junction field plate, a buried layer opposite to a substrate doping type is formed on a substrate of a conventional LDMOS device, and the junction field plate formed by a PN junction is formed in the surface of a device drifting area. The power LDMOS device with the junction field plate uses PN junction electric field distribution in the junction field plate for modulating a device surface electric field, the distribution of the device surface electric field is made to be more even, the insufficiency of a peak of a tail end electric filed of a metal field plate can be effectively avoided, and breakdown performance of the device is improved. Under the reverse blocking state, the junction field plate has an auxiliary exhaustion function for the drifting area, the doping level of the drifting area can be improved to a large extent, and the on-resistance of the device is reduced. Meanwhile, reverse currents are small when reverse bias of the PN junction in the junction field plate occurs, the fact that leakage currents in the field plate are reduced is benefited, and the buried layer in the substrate can effectively improve the voltage endurance property of the device. The device has the advantages of being high in voltage, low in power consumption, low in cost and easy to integrate, and is suitable for power integrated circuits and radio frequency power integrated circuits.

The invention provides a semiconductor substrate testing structure and testing method for monitoring integrated passive devices. The test structure for monitoring a semiconductor substrate for integrating passive devices according to the present invention includes: the two ends of the semiconductor circuit on the semiconductor substrate that are connected to the two ends of the inductance, capacitance and resistance tester are separated by a specific distance. The first metal wire and the second metal wire, wherein a test signal is added to one end of the LCR tester to obtain a C-V curve, and the doping concentration of the semiconductor substrate is determined through the C-V curve. According to the test structure for monitoring semiconductor substrates used for integrated passive devices, the C-V curves reflect the characteristics of metal-oxide-substrate capacitors, and the characteristics of metal-oxide-substrate capacitors are as the semiconductor substrate is doped. The C-V curve reflects the doping concentration of the semiconductor substrate. Furthermore, the change of the resistivity of the semiconductor substrate can be judged by the doping concentration of the semiconductor substrate.

The invention discloses a groove type field effect positive feedback transistor based on a semiconductor substrate and a preparation method thereof. The positive feedback transistor uses a groove type gate oxide layer structure to improve the defects of the planar gate oxide layer positive feedback transistor. By introducing key The doping of the channel region and the inverse substrate doping and low drain doping region of the channel region form the special energy band structure required by the positive feedback mechanism, thereby achieving electrical properties similar to ordinary positive feedback transistors In addition, the positive feedback transistor has a symmetrical physical structure similar to that of a MOSFET, and can be formed on the channel region by a self-aligned ion implantation process similar to a MOSFET under the masking effect of the positive gate and the gate spacer Low drain doping region and cathode region / anode region doping; the positive feedback transistor preparation process of the present invention is compatible with traditional CMOS, increases gate oxide layer capacitance, increases charge retention time, prolongs data storage time, and improves the Device performance as memory.