99results about How to "Increase electron concentration" patented technology

Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.

In the nitride semiconductor device of the present invention, an active layer 12 is sandwiched between a p-type nitride semiconductor layer 11 and an n-type nitride semiconductor layer 13. The active layer 12 has, at least, a barrier layer 2a having an n-type impurity; a well layer 1a made of a nitride semiconductor that includes In; and a barrier layer 2c that has a p-type impurity, or that has been grown without being doped. An appropriate injection of carriers into the active layer 12 becomes possible by arranging the barrier layer 2c nearest to the p-type layer side.

The present invention discloses an LED structure, wherein an N-type current spreading layer is interposed between N-type semiconductor layers to uniformly distribute current flowing through the N-type semiconductor layer. The N-type current spreading layer includes at least three sub-layers stacked in a sequence of from a lower band gap to a higher band gap, wherein the sub-layer having the lower band gap is near the substrate, and the sub-layer having the higher band gap is near the light emitting layer. Each sub-layer of the N-type current spreading layer is expressed by a general formula InxAlyGa(1-x-y)N, wherein 0≦x≦1, 0≦y≦1, and 0≦x+y≦1.

Disclosed is a conductive laminated body, and a method for preparing the same, wherein the conductive laminated body including: a substrate; a zinc oxide-based thin film doped with an element M; and an interlayer including an oxide M′2O3, which is interposed between the substrate and the zinc oxide-based thin film. The disclosed conductive laminated body includes a metal oxide interlayer of an oxidation number +3, between a substrate and a zinc oxide layer. Therefore, it is possible to improve electrical properties of a transparent conductive thin film, especially, a resistivity property, and to minimize the unevenness in electrical properties between a middle portion and a circumferential portion on the surface of the thin film in sputtering deposition. Also, in deposition of a zinc oxide film, in addition to inert gas such as argon gas, the use of hydrogen gas can improve the concentration of electrons, and herein, the interposition of an interlayer including a metal oxide, between the substrate and the zinc oxide-based transparent conductive film, allows the heat-resistance / moisture-resistance stability and the uniformity of electrical properties.

A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

In an electride C12A7 provided by replacing free oxygen in 12CaO.7Al2O3 with electrons, a material having metallic electroconductivity and an electric conductivity of more than 5×102 S / cm at room temperature could not have been produced without difficulties.An electride 12CaO.7Al2O3, which has metallic electroconductivity and has an electric conductivity of more than 5×102 S / cm at room temperature, can be produced by heat-treating titanium metal vapor and 12CaO.7Al2O3 single crystal, sinter, or thin film at a temperature above 600° C. and below 1,450° C. for less than 240 hours. Further, thermoelectric field electron release can also be realized using an electron release chip fabricated from the electride.

A lithium-ion battery and a lithium-ion battery electrode structure are disclosed. The lithium-ion battery electrode structure comprises a metal foil and a semiconductor nanowire matrix. The semiconductor nanowire matrix is disposed on the metal foil, and is doped with dopants.

An Al component gradually-changed N-type LED structure and a preparation method thereof are disclosed. The Al component gradually-changed N-type LED structure successively comprises, from bottom to top, a substrate, a nucleating layer, a buffer layer, an N-type Al<Y>In<X>Ga<1-X-Y>N layer, a multi-quantum well light-emitting layer, and a P-type GaN layer. In the N-type Al<Y>In<X>Ga<1-X-Y>N layer, X is more than or equal to 0 but less than or equal to 1, and Y is more than 0 but less than 1. An Al component in an N-type GaN layer is gradually changed. The method comprises the following steps of: (1) growing the nucleating layer on a processed substrate; (2) growing a non-doped gallium nitride buffer layer on the nucleating layer; (3) growing the N-type Al<Y>In<X>Ga<1-X-Y>N layer on the buffer layer; (4) growing the multi-quantum well light-emitting layer on the N-type Al<Y>In<X>Ga<1-X-Y>N layer, wherein the multi-quantum well light-emitting layer is formed by periodically and alternately superposed InGaN potential well layers and GaN barrier layers; and (5) growing the P-type GaN layer on the multi-quantum well light-emitting layer. An N-type region is prepared by an Al component gradually-changed mode, thereby improving electron concentration and an antistatic effect, essentially improving GaN film quality, enhancing current expansion capability, and increasing light extraction efficiency.

The invention relates to a method for reducing sheet resistance of a graphene thin film, comprising the following step of soaking the graphene thin film and a substrate in a solution with an electron or hole donation capability for a certain time, wherein the solution in the step is one or mixed solution with an electron donation capability of low-valence solutions of heavy metal inorganic acid, organic alcohol and organic amine; or the solution in the step is one or mixed solution with a hole donation capability of a nonmetal inorganic acid solution and an organic alkane solution. The invention has the beneficial effects that: after the graphene thin film arranged on the substrate is soaked in a solution with the electron donation capability, the solution captures holes in the graphene thin film, thus the consistency of electrons in the graphene thin film is increased, and the sheet resistance of the graphene thin film is reduced.

The invention provides a deep UV LED, which includes a substrate; an undoped buffer layer located on the surface of the substrate; an N type AlGaN layer on the undoped buffer layer and far away from the surface of the substrate; a multi-quantum well structure on the undoped buffer layer and far away from the surface of the substrate; and a P type AlGaN structure on the multi-quantum well structure and far away from the surface of the substrate, wherein the V type Al component of the P type AlGaN structure is gradually changed. The P type AlGaN structure with the gradually changed V type Al component is subjected to polarization doping. The Al component in the P type AlGaN structure with the gradually changed V type Al component is different from the Al component in the multi-quantum well structure. The P type AlGaN structure with the gradually changed V type Al component is far away from a P type GaN layer on the surface of the substrate. Based on the P type AlGaN structure with the gradually changed V type Al component, obtained electron holes are higher in concentration. Therefore, the internal quantum efficiency and the emission power of the UV LED are improved.

A composite thermal barrier material. The material includes a support layer coated on one or both sides with an infrared active material to improve thermal retention characteristics. The support layer is typically a flexible organic or polymer material. The infrared active material increases reflectance of thermal infrared radiation and reduces the flow of heat from the interior side of the barrier to the external surroundings. The infrared active material operates through vibrational absorption in the infrared and / or free carrier absorption. Representative infrared active materials include oxides, transparent conductors, and nanoscale metals.

The invention provides a silicon-doped gallium nitride nanoribbon ultraviolet detector and a preparation method thereof. The method comprises the following steps: (1) performing pattern photoetching and potassium hydroxide wet etching on a silicon substrate which is plated with silicon dioxide serving as a mask; (2) growing a silicon-doped gallium nitride nanoribbon on the groove side wall of the pattern; (3) peeling the nanoribbon, and transferring the peeled nanoribbon to the silicon dioxide plated silicon wafer substrate; and (4) plating a silver electrode on the nanoribbon of the substrate obtained in the step (3) so as to obtain the silicon-doped gallium nitride nanoribbon ultraviolet detector. According to the technical scheme, the photoswitch ratio and optical gain of a micro / nano measurement gallium nitride ultraviolet detector can be improved. Experimental results indicate that the silicon-doped gallium nitride nanoribbon ultraviolet detector has a photoswitch ratio of 5.4*10<4>, optical gain and optical sensitivity of 8.8*10<5> and 2.3*10<-5>A / W respectively.

The invention discloses a light emitting diode epitaxial wafer and a manufacturing method thereof, and belongs to the semiconductor technology field. Each quantum well layer of a multi-quantum well layer of the light-emitting diode epitaxial wafer comprises a first quantum well sub-layer, a second quantum well sub-layer and a third quantum well sub-layer which are stacked in sequence. In / Ga ratioof the second quantum well sub-layer is greater than or equal to the In / Ga ratios of the first quantum well sub-layer and the third quantum well sub-layer. Si is doped in the first quantum well sub-layer. Each quantum barrier layer comprises a first quantum barrier sub-layer, a second quantum barrier sub-layer and a third quantum barrier sub-layer which are stacked in sequence. The Si / Ga ratio ofthe second quantum barrier sub-layer is greater than or equal to the Si / Ga ratios of the first quantum barrier sub-layer and the third quantum barrier sub-layer. The light emitting diode epitaxial wafer can improve an energy band inclination phenomenon in the multi-quantum well layer, an overlapping degree of wave functions of electrons and holes in space distribution is increased and internal quantum efficiency of an LED is improved.

The invention provides a preparation method and application of a graphene-wrapping fluorine-doped lithium titanate nanowire and belongs to the technical field of lithium-ion battery energy material production. According to the preparation method, industrial-grade TiO2 which is low in cost is used as a raw material, a hydrothermal method is used as a basis, through two-step conversion, industrial-grade TiO2 which is low in cost is converted into the lithium titanate nanowire in a specific shape, the cost of forming the lithium titanate nanowire is greatly lowered, and industrial production andapplication are facilitated. Meanwhile, the lithium titanate nanowire is doped with liquid-phase fluorine and wrapped by graphene in situ, and the electric conductivity of the lithium titanate material is increased through the synergistic effect of the shape, ion doping and graphene wrapping. The obtained graphene-in-situ-wrapping fluorine-doped lithium titanate nanowire has the charging and discharging specific capacity close to a theoretical value, and the rate capability of the material is remarkably increased.

The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGa1-xN layer, where 0<x<1, is interposed between the first and second n-type GaN layers, thereby forming a two-dimensional electron gas layer at interfaces of the first and second n-type GaN layers.

The invention provides a novel silver-introduced hafnium-nitride-membrane high-infrared-reflection durable material and relates to the field of infrared reflection membrane materials. The material is a HfN-Agx membrane formed by HfN and Ag, the HfN-Agx membrane has a solid solution structure comprising HfN and Ag, and the content of Ag is 0.8-3.8at.%. A preparation method of the durable material includes: selecting a silicon wafer or a glass substrate to use as the substrate, placing a Hf target and a Ag target into a magnetic control sputtering chamber, vacuumizing, setting magnetic control sputtering parameters, feeding N2 and Ar gas, and depositing the HfN-Agx membrane onto the substrate. The durable material is good in infrared reflection performance and excellent in durability, can be hopefully used as the high-infrared-reflection durable membrane in harsh environments with high-speed solid-liquid particle impact, high temperature and corrosive liquid and gas, and can also be applied to the surface of an optical reflection device.

A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

The invention relates to boron-doped graphene nanoribbons and a preparation method thereof. The preparation method comprises the following steps: preparation of oxidized carbon nano wall slurry; and preparation of the boron-doped graphene nanoribbons. The boron-doped graphene nanoribbons belong to P-type doping, the hole concentration can be increased, at the same time, the potential for lithium can be improved, moreover, the yield of the boron-doped graphene nanoribbons is high, raw materials can be self-prepared, and the production cost is reduced. Devices required in the preparation process are all common chemical devices, so that the cost of the research and development devices can be saved, and mass production is fitted.

The invention discloses a GaN-based semiconductor light emitting diode (LED), which is capable of enhancing a luminous efficiency under high injection currents. The GaN-based LED is composed of a substrate, an N type doping layer, a multi-quantum well luminescent layer, a P type doping layer and electrodes. A band gap of a last barrier in the multi-quantum well luminescent layer decreases linearly along a growth direction, wherein the last barrier approaches a P type AlGaN electronic barrier layer; and the material of the band gap is alloy that is formed by other barrier materials in the multi-quantum well structure and InN or GaN; moreover, the content of the InN or the GaN increases linearly along the growth direction.

The invention discloses a high-strength and high-temperature-resistant magnesium alloy, and belongs to the field of metallic materials. The magnesium alloy mainly comprises elements of magnesium, aluminum, zinc, manganese, erbium, yttrium, zirconium and the like, the magnesium alloy is composed, by weight percentage, of 1-2% of the aluminum, 2-3% of the zinc, 0.5-1% of the manganese, 2-3.5% of the erbium, 1.5-2% of the yttrium, 0.02-0.05% of the zirconium, less than 0.02% of silicon, less than 0.002% of copper, less than 0.002% of iron, less than 0.005% of other impurities and the balance magnesium. According to high-strength and high-temperature-resistant magnesium alloy, the elements such as the magnesium, the aluminum, the zinc, the manganese, the erbium, the yttrium and the zirconium are added into the magnesium alloy, room-temperature strength and corrosion resistance of materials are improved, tensile strength, elongation and high-temperature strength of the magnesium alloy are greatly improved, and the magnesium alloy can work under the temperature ranging from 200 DEG C to 300 EDG C for a long time.

The invention relates to an electrode as well as a preparation method and application thereof. The electrode takes titanium or a titanium alloy as a base material, wherein a composite material coating is coated on the outer surface of the base material; the composite material layer is prepared from composite materials solution through coating, drying and sintering; the composite materials solution is nanometer solution formed through dissolving transition metal elements in ethyl alcohol; the nanometer solution takes particles of transition metal as solutes; the transition metal elements are iridium, platinum, cerium, yttrium, tantalum, cobalt and titanium in mole ratio of (15-20): (8-10): (5-15): )13-19): (9-17): (16-23): (30-50). The coating of the electrode is difficult to fall off and the electrode is long in service life.

An electrode, a preparation method therefor, and uses thereof. Titanium or titanium alloy is used as a base material of the electrode, the outer surface of the base material is coated with a composite material coating, and the composite material coating is prepared by coating a composite material solution and carrying out drying and sintering. The composite material solution is a nanoscale solution formed by dissolving transition metal elements in ethanol. The nanoscale solution is an ethanol solution of the nanoscale transition metal with particles of the transition metal as solutes thereof. The transition metal elements are platinum, iridium, ruthenium, gold, cerium, rhodium, tantalum, manganese, nickel, palladium, yttrium, gadolinium, cobalt, europium, lanthanum, neodymium, zirconium and titanium, and the molar ratio of the transition metal elements platinum, iridium, ruthenium, gold, cerium, rhodium, tantalum, manganese, nickel, palladium, yttrium, gadolinium, cobalt, europium, lanthanum, neodymium, zirconium and titanium in the composite material solution is 5-15:23-34:14-21:1-7:9-17:3-12:15-27:3-6:2-9:10-23:15-27:2-8:15-30:3-12:4-14:1-10:6-15:20-50.

The invention discloses a light emitting diode epitaxial wafer and a preparation method thereof, and belongs to the technical field of semiconductors. The light-emitting diode epitaxial wafer comprises a substrate, an N-type semiconductor layer, a stress release layer, an active layer and a P-type semiconductor layer, wherein the N-type semiconductor layer, the stress release layer, the active layer and the P-type semiconductor layer are sequentially stacked on the substrate; the stress release layer comprises a plurality of composite structures which are stacked in sequence, wherein each composite structure comprises a first sub-layer, a second sub-layer, a third sub-layer and a fourth sub-layer which are stacked in sequence; the first sub-layer is made of non-doped indium gallium nitride, the second sub-layer is made of non-doped aluminum nitride, the third sub-layer is made of silicon nitride, and the fourth sub-layer is made of non-doped gallium nitride. According to the light-emitting diode epitaxial wafer, the photoelectric property of the LED is finally improved.

The present invention provides an OMC (Ordered Mesoporous Carbon)-based composite electrode and a lead-acid battery. The OMC-based composite electrode comprises a negative plate grid and lead plasterof an OMC / sponge Pb composite structure material, wherein the lead plaster of the OMC / sponge Pb composite structure material coats the negative plate grid, and the OMC-based composite negative electrode is prepared after solidification and drying. The OMC-based composite negative electrode is prepared by coating lead plaster of the OMC / sponge Pb composite structure material on the negative plate grid for curing and drying. The OMC-based composite electrode and the lead-acid battery are favorable for improving the specific capacity and the service life of the lead-acid battery. The technology of the traditional lead-acid battery negative electrode and the technology of the super capacitor are fused, so that the energy advantage of the battery characteristic is achieved, and the instant power high-capacity charging characteristic of the double electric layer capacitor is achieved, so that the specific capacity and the service life of the traditional lead-acid battery are improved.

The invention discloses an ion-implanted one-dimensional electron gas GaN-based HEMT (high electron mobility transistor) device and a preparation method. The problems of poorer high-temperature high-voltage characteristics, frequency characteristics and power characteristics of the conventional one-dimensional electron gas device are mainly solved. The device comprises a substrate, buffer layer, a potential barrier layer, a passivation layer and a protective layer from bottom to top, wherein a source and a drain are arranged at two ends on the potential barrier layer respectively; the passivation layer is positioned on the potential barrier layer between the source and the drain; a gate trough is formed in the passivation layer, and a gate is arranged in the gate trough; the buffer layer is made from GaN, and the potential barrier layer is made from AlGaN; anions are implanted into local areas on the potential barrier layer, and the areas where the anions are implanted are a plurality of spaced strips; the widths of areas where the anions are not implanted between the strips are at a nanometer order of magnitude, and a one-dimensional electron gas is formed in heterogeneous junctions below the areas where the anions are implanted. Compared with Si-based and GaAs-based devices, the device has good high-temperature high-voltage characteristics, good frequency characteristics and good power characteristics, and a one-dimensional electron gas device with super-high speed and low power consumption can be manufactured.

The invention provides a nitride semiconductor device and a manufacturing method thereof. In the invention, n-type and p-type nitride semiconductor layers are formed on a substrate, and an active layer is formed therebetween. The n-type nitride semiconductor layers include first and second n-type GaN layers disposed in the order of distance from the active layer. In addition, in the nitride semiconductor device of the invention, an AlxGal-xN layer, where 0<x<1, is interposed between the first and second n-type GaN layers, thereby forming a two-dimensional electron gas layer at interfaces of the first and second n-type GaN layers.

The invention discloses a method and device for manufacturing a micro-fluidic chip with a femtosecond plasma grating. The method is characterized in that two or more beams of femtosecond pulse lasersact on quartz glass together at a certain included angle and converge in the quartz glass, and when pulses achieve synchronization in time domain, pulses of two beams of light interfere; under the constraint of an interference field, only one filament is formed in a place where interference is constructive; and multiple filaments are arranged equidistantly in space to form the plasma grating; andthe device for manufacturing the micro-fluidic chip comprises a plasma grating light path, a micro-channel processing platform and a hydrofluoric acid ultrasonic pool. Compared with the prior art, themethod and the device have the advantages of increasing the manufacturing speed of the quartz glass micro-fluidic chip and improving the roughness quality of a micro-channel wall surface; especiallythe micro-fluidic chip of a three-dimensional structure can be conveniently processed; a new preparation method is provided for manufacturing of micro-channel chips, and the new preparation has uniqueadvantages especially in processing the micro-fluidic chip with an ultrafast optical technology.