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Deep UV LED

A deep-ultraviolet and component gradient technology, which is applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of low internal quantum efficiency and emission power of deep-ultraviolet LEDs, so as to improve the internal quantum efficiency and emission power, and increase the hole density. The effect of injection rate

Pending Publication Date: 2017-09-19
GUANGDONG UNIV OF TECH
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Problems solved by technology

[0005] In view of this, the present invention provides a deep ultraviolet LED to solve the problem of low internal quantum efficiency and emission power of the deep ultraviolet LED in the prior art

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Embodiment Construction

[0029] As mentioned in the background section, the internal quantum efficiency and emission power of AlGaN-based ultraviolet LEDs in the prior art are relatively low.

[0030] At present, the main reasons for the low luminous efficiency of AlGaN-based deep ultraviolet LED light sources are: the carrier injection efficiency of AlGaN materials with high Al composition is low, which restricts the improvement of quantum efficiency in ultraviolet LEDs; the structural properties of AlGaN materials with high Al composition determine its The light extraction efficiency is low.

[0031] Based on this, the present invention provides a deep ultraviolet LED, comprising:

[0032] Substrate;

[0033] an undoped buffer layer located on the surface of the substrate;

[0034] An N-type AlGaN layer located on the undoped buffer layer away from the surface of the substrate;

[0035] a multi-quantum well structure located in the N-type AlGaN layer away from the surface of the substrate;

[00...

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Abstract

The invention provides a deep UV LED, which includes a substrate; an undoped buffer layer located on the surface of the substrate; an N type AlGaN layer on the undoped buffer layer and far away from the surface of the substrate; a multi-quantum well structure on the undoped buffer layer and far away from the surface of the substrate; and a P type AlGaN structure on the multi-quantum well structure and far away from the surface of the substrate, wherein the V type Al component of the P type AlGaN structure is gradually changed. The P type AlGaN structure with the gradually changed V type Al component is subjected to polarization doping. The Al component in the P type AlGaN structure with the gradually changed V type Al component is different from the Al component in the multi-quantum well structure. The P type AlGaN structure with the gradually changed V type Al component is far away from a P type GaN layer on the surface of the substrate. Based on the P type AlGaN structure with the gradually changed V type Al component, obtained electron holes are higher in concentration. Therefore, the internal quantum efficiency and the emission power of the UV LED are improved.

Description

technical field [0001] The present invention relates to the technical field of semiconductor optoelectronics, in particular to a deep ultraviolet LED (Light-Emitting Diode, light-emitting diode). Background technique [0002] Ultraviolet LEDs based on AlGaN (aluminum gallium nitride) materials are the main trend in the development of nitride technology and the development of third-generation material technology, and have broad application prospects. UV LEDs are used in a wide range of applications, such as air and water purification, disinfection, UV medical treatment, high-density optical storage systems, full-color displays, and solid-state white lighting. As another major industry after semiconductor lighting, semiconductor ultraviolet light source has attracted widespread attention from the semiconductor optoelectronic industry. [0003] However, unlike blue LEDs, UV LEDs are currently in the stage of technological development, and there are still some problems that are...

Claims

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Application Information

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IPC IPC(8): H01L33/06H01L33/14H01L33/32
CPCH01L33/06H01L33/145H01L33/32
Inventor 何苗黄波王成民王润周海亮
Owner GUANGDONG UNIV OF TECH
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